IKW25T120 (R) TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop(R) and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C * * * * * * * * * * * Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D Short circuit withstand time - 10s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop(R) and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ E PG-TO-247-3 VCE IC VCE(sat),Tj=25C Tj,max Marking Code Package 1200V 25A 1.7V 150C K25T120 PG-TO-247-3 Type IKW25T120 G Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25C TC = 100C IC Pulsed collector current, tp limited by Tjmax ICpuls 75 Turn off safe operating area - 75 A 50 25 VCE 1200V, Tj 150C Diode forward current IF TC = 25C 50 TC = 100C 25 Diode pulsed current, tp limited by Tjmax IFpuls 75 Gate-emitter voltage VGE 20 V tSC 10 s Ptot 190 W C Short circuit withstand time 2) VGE = 15V, VCC 1200V, Tj 150C Power dissipation TC = 25C Operating junction temperature Tj -40...+150 Storage temperature Tstg -55...+150 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors 2 http://store.iiic.cc/ - 260 Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.65 K/W RthJCD 1.0 RthJA 40 Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j = 25C - 1.7 2.2 T j = 125 C - 2.0 - T j = 150 C - 2.2 - T j = 25C - 1.7 2.2 T j = 125 C - 1.7 - T j = 150 C - 1.7 - 5.0 5.8 6.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =500 A Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C =25A VGE=0V, IF=25A Gate-emitter threshold voltage VGE(th) IC=1mA, V C E =V G E Zero gate voltage collector current ICES V C E = 12 00 V , VGE=0V mA T j = 25C - - 0.25 T j = 150 C - - 2.5 Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 600 nA Transconductance gfs V C E =20V, I C =25A - 16 - S Integrated gate resistor RGint Power Semiconductors 8 3 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series Dynamic Characteristic Input capacitance Ciss V C E =25V, - 1860 - Output capacitance Coss VGE=0V, - 96 - Reverse transfer capacitance Crss f=1MHz - 82 - Gate charge QGate V C C = 96 0 V, I C =25A - 155 - nC - 13 - nH - 150 - A pF V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) V G E =15V,t S C 1 0 s V C C = 600 V, T j = 2 5C IC(SC) Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 50 - - 30 - - 560 - - 70 - - 2.0 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 2.2 - Ets T j = 25C , V C C = 60 0 V, I C =25A V G E = 0 /1 5 V, R G = 2 2 , L 2 ) =1 80nH, C 2 ) =39pF Energy losses include "tail" and diode reverse recovery. - 4.2 - Diode reverse recovery time trr T j = 25C , - 200 - Diode reverse recovery charge Qrr V R = 60 0 V , I F =25A, - 2.3 C Diode peak reverse recovery current Irrm d i F /d t= 800A/s - 21 A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 390 mJ Anti-Parallel Diode Characteristic 1) 2) - ns A/s Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors 4 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value min. typ. max. - 50 - - 32 - - 660 - - 130 - - 3.0 - Unit IGBT Characteristic - 4.0 - Ets T j = 150 C V C C = 60 0 V, I C =25A, V G E = 0 /1 5 V, R G = 2 2 , L 1 ) =1 80nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. - 7.0 - Diode reverse recovery time trr T j = 150 C - 320 - ns Diode reverse recovery charge Qrr V R = 60 0 V , I F =25A, - 5.2 - C Diode peak reverse recovery current Irrm d i F /d t= 800A/s - 29 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 320 Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns mJ Anti-Parallel Diode Characteristic 1) A/s Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors 5 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series tp=3s 60A TC=80C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A 50A 40A TC=110C 30A 20A 10A 0A 10Hz Ic 10s 10A 50s 150s 1A 500s Ic 100Hz 20ms 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 22) DC 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V) 150W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 40A 100W 50W 0W 25C 50C 75C 100C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) Power Semiconductors 30A 20A 10A 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) 6 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series 70A 70A 60A VGE=17V 50A 15V 40A 11V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 60A 13V 9V 30A 7V 20A 10A 50A 15V 40A 11V 13V 9V 30A 7V 20A 10A 0A 0A 0V 1V 2V 3V 4V 5V 6V 0V 70A 60A 50A 40A 30A 20A TJ=150C 25C 10A 0A 0V 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) IC, COLLECTOR CURRENT VGE=17V 3,0V IC=50A 2,5V 2,0V IC=25A 1,5V IC=15A IC=8A 1,0V 0,5V 0,0V -50C 0C 50C 100C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 7 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series td(off) tf t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns td(on) 10ns tf 100 ns td(on) tr 10 ns tr 1ns 0A 10A 20A 30A 1 ns 40A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=22, Dynamic test circuit in Figure E) 100ns tf td(on) tr 10ns 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=22, Dynamic test circuit in Figure E) Power Semiconductors 15 25 35 45 RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 5 7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.0mA) 8 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series E, SWITCHING ENERGY LOSSES 14,0mJ E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery *) Eon and Etsinclude losses due to diode recovery 12,0mJ 10,0mJ 8,0mJ 6,0mJ Ets* 4,0mJ Eoff 2,0mJ 8 mJ Ets* 6 mJ Eoff 4 mJ Eon* 2 mJ Eon* 0,0mJ 10A 20A 30A 0 mJ 40A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=22, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery 10mJ 6mJ 5mJ 4mJ E ts * 3mJ E off 2mJ E on* 1mJ 0mJ 100C 150C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=22, Dynamic test circuit in Figure E) Power Semiconductors 25 35 *) Eon and Ets include losses due to diode recovery 9mJ 8mJ 7mJ 6mJ 5mJ 4mJ Ets* 3mJ 2mJ 1mJ 50C 15 RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 7mJ 5 Eoff Eon* 0mJ 400V 500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=25A, RG=22, Dynamic test circuit in Figure E) 9 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series 15V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 1nF 960V 10V Crss 5V 0V 0nC 50nC 100nC 150nC IC(sc), short circuit COLLECTOR CURRENT 10s tSC, 5s 12V 14V 10V 20V 200A 150A 100A 50A 0A 16V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 15s 0s 10pF 200nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=25 A) SHORT CIRCUIT WITHSTAND TIME Coss 100pF 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C) 10 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) VCE 60A 400V 40A 200V 0V 20A 0.5us 0us ZthJC, TRANSIENT THERMAL RESISTANCE 600V 40A 400V IC 200V 20A 1us 1.5us D=0.5 0.2 0.1 0.05 0.02 -2 10 K/W R,(K/W) 0.229 0.01 0.192 single pulse 0.174 0.055 R1 , (s) -1 1.10*10 -2 1.56*10 -3 1.35*10 -4 1.52*10 R2 C1=1/R1 0.5us 1us 1.5us t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=22, Tj = 150C, Dynamic test circuit in Figure E) 0 10 K/W D=0.5 0.2 0.1 R,(K/W) 0.282 0.317 0.294 0.107 -1 10 K/W 0.05 0.02 R1 , (s) -1 1.01*10 -2 1.15*10 -3 1.30*10 -4 1.53*10 R2 0.01 single pulse C2=2/R2 -3 10 K/W 10s 0V 0A 0us 0A t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=22, Tj = 150C, Dynamic test circuit in Figure E) -1 60A VCE IC 10 K/W IC, COLLECTOR CURRENT 600V ZthJC, TRANSIENT THERMAL RESISTANCE VCE, COLLECTOR-EMITTER VOLTAGE TrenchStop Series C1=1/R1 C2=2/R2 10ms 100ms -2 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 10 K/W 10s 100s 1ms tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) 11 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) 400ns 300ns 200ns TJ=150C 100ns TJ=25C 0ns 400A/s 600A/s 800A/s Irr, REVERSE RECOVERY CURRENT diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) TJ=150C 30A 25A TJ=25C 20A 15A 10A 5A 0A 400A/s 600A/s 800A/s 1000A/s diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) Power Semiconductors TJ=150C 5C 4C 3C 2C TJ=25C 1C 0C 400A/s 1000A/s 600A/s 800A/s 1000A/s diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME 500ns Qrr, REVERSE RECOVERY CHARGE TrenchStop Series TJ=25C -400A/s TJ=150C -300A/s -200A/s -100A/s -0A/s 400A/s 600A/s 800A/s 1000A/s diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) 12 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series TJ=25C 150C 2,0V VF, FORWARD VOLTAGE IF, FORWARD CURRENT 60A 40A 20A IF=50A 1,5V 25A 15A 8A 1,0V 0,5V 0A 0V 1V 0,0V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors -50C 0C 50C 100C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature 13 http://store.iiic.cc/ Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series PG-TO247-3 M M MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60 MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 5.44 3 19.80 4.17 3.50 5.49 6.04 Power Semiconductors MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 Z8B00003327 0 0 5 5 7.5mm 0.214 3 20.31 4.47 3.70 6.00 6.30 0.780 0.164 0.138 0.216 0.238 14 http://store.iiic.cc/ 0.799 0.176 0.146 0.236 0.248 17-12-2007 03 Rev. 2.2 Sep 08 IKW25T120 (R) TrenchStop Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors 15 http://store.iiic.cc/ Figure E. Dynamic test circuit Leakage inductance L =180nH a nd Stray capacity C =39pF. Rev. 2.2 Sep 08 (R) IKW25T120 TrenchStop Series Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 16 http://store.iiic.cc/ Rev. 2.2 Sep 08