PBSS5540Z,115 - NEXPERIA

PBSS5540Z

40 V low VCEsat PNP transistor

20 September 2019 Product data sheet

1. General description

PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z.

2. Features and benefits

•Low collector-emitter saturation voltage

•High current capability

•Improved device reliability due to reduced heat generation.

•AEC-Q101 qualified

3. Applications

•Supply line switching circuits

•Battery management applications

•DC/DC converter applications

•Strobe flash units

•Heavy duty battery powered equipment (motor and lamp drivers)

•MOSFET driver applications.

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter

voltage

open base - - -40 V

ICcollector current - - -5 A

ICM peak collector current single pulse; tp ≤ 1 ms - - -10 A

RCEsat collector-emitter

saturation resistance

IC = -2 A; IB = -200 mA; tp ≤ 300 µs;

pulsed; δ ≤ 0.02; Tamb = 25 °C

- 55 80 mΩ

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 B base

2 C collector

3 E emitter

4 C collector 1 32

SC-73 (SOT223) sym132

Nexperia PBSS5540Z

40 V low VCEsat PNP transistor

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PBSS5540Z SC-73 plastic surface-mounted package with increased heatsink; 4

leads

SOT223

7. Marking

Table 4. Marking codes

Type number Marking code

PBSS5540Z PB5540

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - -40 V

VCEO collector-emitter voltage open base - -40 V

VEBO emitter-base voltage open collector - -6 V

ICcollector current - -5 A

ICM peak collector current - -10 A

IBM peak base current

single pulse; tp ≤ 1 ms

- -2 A

[1] - 1.35 WPtot total power dissipation Tamb ≤ 25 °C

[2] - 2 W

Tjjunction temperature - 150 °C

Tamb ambient temperature -65 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

in free air [1] - - 92 K/WRth(j-a) thermal resistance from

junction to ambient [2] - - 62 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

Product data sheet 20 September 2019 2 / 10

Nexperia PBSS5540Z

40 V low VCEsat PNP transistor

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

V(BR)CBO collector-base

breakdown voltage

IC = -100 µA; IE = 0 A -40 - - V

V(BR)CEO collector-emitter

breakdown voltage

IC = -10 mA; IB = 0 A; Tamb = 25 °C -40 - - V

V(BR)EBO emitter-base

breakdown voltage

(collector open)

IE = -100 µA; IB = 0 mA; Tamb = 25 °C -6 - - V

VCB = -30 V; IE = 0 A; Tamb = 25 °C - - -100 nAICBO collector-base cut-off

current VCB = -30 V; IE = 0 A; Tj = 150 °C - - -50 µA

IEBO emitter-base cut-off

current

VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA

VCE = -2 V; IC = -500 mA; Tamb = 25 °C 250 350 -

VCE = -2 V; IC = -1 A; tp ≤ 300 µs;

pulsed; δ ≤ 0.02; Tamb = 25 °C

200 300 -

VCE = -2 V; IC = -2 A; tp ≤ 300 µs;

pulsed; δ ≤ 0.02; Tamb = 25 °C

150 250 -

hFE DC current gain

VCE = -2 V; IC = -5 A; tp ≤ 300 µs;

pulsed; δ ≤ 0.02; Tamb = 25 °C

50 150 -

IC = -500 mA; IB = -5 mA; Tamb = 25 °C - -80 -120 mV

IC = -1 A; IB = -10 mA; Tamb = 25 °C - -120 -170 mV

IC = -2 A; IB = -200 mA; Tamb = 25 °C - -110 -160 mV

VCEsat collector-emitter

saturation voltage

IC = -5 A; IB = -500 mA; Tamb = 25 °C - -250 -375 mV

RCEsat collector-emitter

saturation resistance

IC = -2 A; IB = -200 mA; tp ≤ 300 µs;

pulsed; δ ≤ 0.02; Tamb = 25 °C

- 55 80 mΩ

VBEsat base-emitter saturation

voltage

IC = -5 A; IB = -500 mA; Tamb = 25 °C - - -1.3 V

VBEon base-emitter turn-on

voltage

VCE = -2 V; IC = -2 A; Tamb = 25 °C - -0.8 -1.25 V

fTtransition frequency VCE = -10 V; IC = -100 mA; f = 100 MHz;

Tamb = 25 °C

60 120 - MHz

Cccollector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

- 90 105 pF

Product data sheet 20 September 2019 3 / 10

Nexperia PBSS5540Z

40 V low VCEsat PNP transistor

mgu391

1000

200

400

600

800

- 1

hFE

IC (mA)

- 10 - 102- 103- 104

(1)

(2)

(3)

VCE = −2 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 1. DC current gain as a function of collector

current; typical values

mgu393

- 1.2

- 0.4

- 0.8

- 10- 1 - 1 - 10 - 102- 103- 104

IC (mA)

VBE

(V)

(1)

(2)

(3)

VCE = −2 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 2. Base-emitter voltage as a function of collector

current; typical values

mgu395

- 103

- 102

- 10

- 1

- 10- 1 - 1 - 10

IC (mA)

VCEsat

(mV)

- 102- 103- 104

(1)

(3)

(2)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 3. Collector-emitter saturation voltage as a

function of collector current; typical values

mgu394

- 1.2

- 0.4

- 0.8

- 10- 1 - 1 - 10 - 102- 103- 104

IC (mA)

VBEsat

(V)

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 4. Base-emitter saturation voltage as a function of

collector current; typical values

Product data sheet 20 September 2019 4 / 10

Nexperia PBSS5540Z

40 V low VCEsat PNP transistor

mgu392

(A)

VCE (V)

- 2

- 10

- 2

- 4

- 6

- 8

- 0.4 - 0.8 - 1.2 - 1.6

(10)

(9)

(8)

(7)

(6)

(5)

(4)

(3)

(2)

(1)

Tamb = 25 °C

(1) IB = −150 mA

(2) IB = −135 mA

(3) IB = −120 mA

(4) IB = −105 mA

(5) IB = −90 mA

(6) IB = −75 mA

(7) IB = −60 mA

(8) IB = −45 mA

(9) IB = −30 mA

(10) IB = −15 mA

Fig. 5. Collector current as a function of collector-

emitter voltage; typical values

mgu396

103

102

10- 1

- 10- 1 - 1 - 10

IC (mA)

RCEsat

(Ω)

- 102- 103- 104

(1)

(3)

(2)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 6. Collector-emitter equivalent on-resistance as a

function of collector current; typical values

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

Product data sheet 20 September 2019 5 / 10

Nexperia PBSS5540Z

40 V low VCEsat PNP transistor

12. Package outline

UNIT A1bpc D E e1HELpQ ywv

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.10

0.01

1.8

1.5

0.80

0.60

3.1

2.9

0.32

0.22

6.7

6.3

3.7

3.3 2.3

4.6 7.3

6.7

1.1

0.7

0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 04-11-10

06-03-16

detail X

vMA

0 2 4 mm

scale

1 32

Plastic surface-mounted package with increased heatsink; 4 leads SOT223

Fig. 7. Package outline SC-73 (SOT223)

Product data sheet 20 September 2019 6 / 10

Nexperia PBSS5540Z

40 V low VCEsat PNP transistor

13. Soldering

sot223_fr

1.2

(4×)

1.2

(3×)

1.3

(4×)

1.3

(3×)

6.15

3.85

3.6

3.5

0.3

3.9 7.65

2.3 2.3

6.1

2 31

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

Fig. 8. Reflow soldering footprint for SC-73 (SOT223)

sot223_fw

1.9

6.7

8.9

8.7

1.9

(3×)

1.9

(2×)

1.1

6.2

2.7

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

Fig. 9. Wave soldering footprint for SC-73 (SOT223)

Product data sheet 20 September 2019 7 / 10

Nexperia PBSS5540Z

40 V low VCEsat PNP transistor

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PBSS5540Z v.3 20190920 Product data sheet - PBSS5540Z v.2

Modifications: •Automotive AEC-Q101 qualification added in sections "features and benefits", "Test

information" and "Legal information"

•Characteristics: breakdown voltages added

•The format of this data sheet has been redesigned to comply with the identity guidelines of

Nexperia.

•Legal texts have been adapted to the new company name where appropriate.

PBSS5540Z v.2 20010921 Product data sheet - PBSS5540Z v.1

PBSS5540Z v.1 20010126 Product data sheet - -

Product data sheet 20 September 2019 8 / 10

Nexperia PBSS5540Z

40 V low VCEsat PNP transistor

15. Legal information

Data sheet status

Document status

[1][2]

Product

status [3]

Definition

Objective [short]

data sheet

Development This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification This document contains data from

the preliminary specification.

Product [short]

data sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

Definitions

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warranties as to the accuracy or completeness of information included herein

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product data given in the Limiting values and Characteristics sections of this

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

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In the event that customer uses the product for design-in and use in

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Notice: All referenced brands, product names, service names and

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Product data sheet 20 September 2019 9 / 10

Nexperia PBSS5540Z

40 V low VCEsat PNP transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................1

6. Ordering information....................................................2

7. Marking.......................................................................... 2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 2

10. Characteristics............................................................ 3

11. Test information.......................................................... 5

12. Package outline.......................................................... 6

13. Soldering..................................................................... 7

14. Revision history..........................................................8

15. Legal information........................................................9

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 20 September 2019

Product data sheet 20 September 2019 10 / 10