Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 7
1Publication Order Number:
MMBTA55LT1/D
MMBTA55LSeries,
MMBTA56LSeries,
SMMBTA56LSeries
Driver Transistors
PNP Silicon
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBTA55
MMBTA56, SMMBTA56
VCEO −60
−80
Vdc
Collector−Base Voltage
MMBTA55
MMBTA56, SMMBTA56
VCBO −60
−80
Vdc
Emitter−Base Voltage VEBO −4.0 Vdc
Collector Current − Continuous IC−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25C
Derate above 25C
PD225
1.8
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 556 C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25C
Derate above 25C
PD300
2.4
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 417 C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−23
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2xx M G
G
2xx = Device Code
x = H for MMBTA55LT1G
xx = GM for MMBTA56LT1G,
SMMBTA56LT1G
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
MMBTA55
MMBTA56, SMMBTA56
V(BR)CEO
−60
−80
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO −4.0 −
Vdc
Collector Cutoff Current
(VCE = −60 Vdc, IB = 0)
ICES − −0.1
mAdc
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
MMBTA55
(VCB = −80 Vdc, IE = 0)
MMBTA56, SMMBTA56
ICBO
−
−
−0.1
−0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE 100
100
−
−
−
Collector−Emitter Saturation Voltage
(IC = −100 mAdc, IB = −10 mAdc)
VCE(sat) − −0.25
Vdc
Base−Emitter On Voltage
(IC = −100 mAdc, VCE = −1.0 Vdc)
VBE(on) − −1.2
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz)
fT50 −
MHz
3. Pulse Test: Pulse Width v300 ms, Duty Cycle v2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Switching Time Test Circuits
OUTPUT
TURN-ON TIME -1.0 V VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN-OFF TIME +VBB VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
http://onsemi.com
3
Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance
IC, COLLECTOR CURRENT (mA)
-100 -200-10
200
100
70
50
20
VR, REVERSE VOLTAGE (VOLTS)
-1.0 -100-0.1
100
70
50
30
20
10
-2.0
VCE = -2.0 V
TJ = 25C
fT, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz
)
C, CAPACITANCE (pF)
-2.0 -3.0 -5.0 -7.0 -20 -30 -50 -70
30
7.0
5.0 -0.2 -0.5 -5.0 -10 -20 -50
TJ = 25C
Cibo
Cobo
Figure 4. Switching Time
IC, COLLECTOR CURRENT (mA)
-10-5.0
500
200
100
50
20
10
-100
t, TIME (ns)
-50 -200 -500
1.0 k
300
700
70
30
-7.0 -300-70-20 -30
VCC = -40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
tf
tr
td @ VBE(off) = -0.5 V
Figure 5. DC Current Gain
-2.0 -500-0.5
IC, COLLECTOR CURRENT (mA)
400
200
100
80
60
40
-10
, DC CURRENT GAIN
TJ = 125C
-1.0 -5.0
VCE = -1.0 V
-20 -100-50 -200
hFE
25C
-55C
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.0010.0001
0.2
0.3
0.4
0.6
0.7
0.8
1.0
1.1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150C
25C
−55C
0.5
0.9
IC/IB = 10
150C
25C
−55C
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
http://onsemi.com
4
Figure 8. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
VBE(on), BASE−EMITTER VOLTAGE (V)
0.4
0.8
1.0
VCE = 1 V
150C
25C
−55C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature
Coefficient
Figure 11. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Thermal Limit
100 mS
1 S
10 mS
1 mS
IB, BASE CURRENT (mA)
, COLLECTOR-EMITTER VOLTAGE (VOLTS)VCE
-0.1 -10-0.05
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0
TJ = 25C
-50
IC =
-100 mA
IC =
-50 mA
IC =
-250 mA
IC =
-500 mA
IC =
-10 mA
-20-2.0 -5.0-0.2 -0.5
IC, COLLECTOR CURRENT (mA)
RVB , TEMPERATURE COEFFICIENT (mV/ C)
q
-100 -500-0.5
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-10
RqVB for VBE
-1.0 -2.0 -5.0 -20 -50 -200
ORDERING INFORMATION
Device Order Number Package Type Shipping†
MMBTA55LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBTA55LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBTA56LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SMMBTA56LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBTA56LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
SMMBTA56LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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Phone: 81−3−5817−1050
MMBTA55LT1/D
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