Semiconductor Group 128/Jan/1998
BUZ111S
SPP80N05
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Pin 1 Pin 2 Pin 3
GDS
Type VDS IDRDS(on)Package Ordering Code
BUZ111S 55 V 80 A 0.008
Ω
TO-220 AB Q67040-S4003-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TC = 100 °C
ID 80
A
Pulsed drain current
TC = 25 °C
IDpuls 320
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25
Ω
L = 220 µH, Tj = 25 °C
EAS
700
mJ
Avalanche current,limited by Tjmax IAR 80 A
Avalanche energy,periodic limited by Tjmax EAR 25 mJ
Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
dv/dt
6
kV/µs
Gate source voltage VGS
±
20 V
Power dissipation
TC = 25 °C
Ptot 250
W
Semiconductor Group 228/Jan/1998
BUZ111S
SPP80N05
Maximum Ratings
Parameter Symbol Values Unit
Operating temperature Tj -55 ... + 175 °C
Storage temperature Tstg -55 ... + 175
Thermal resistance, junction - case RthJC
≤
0.6 K/W
Thermal resistance, junction - ambient RthJA
≤
62
IEC climatic category, DIN IEC 68-1 55 / 175 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS 55 - -
V
Gate threshold voltage
VGS=VDS, ID = 240 µA
VGS(th) 2.1 3 4
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
-
-
0.1
-
100
1
0.1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS - 10 100
nA
Drain-Source on-resistance
VGS = 10 V, ID = 80 A
RDS(on) - 0.0065 0.008
Ω
Semiconductor Group 328/Jan/1998
BUZ111S
SPP80N05
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 80 A
gfs 30 - -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 3600 4500
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 1100 1375
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 550 690
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4
Ω
td(on)
- 25 37
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4
Ω
tr
- 30 45
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4
Ω
td(off)
- 65 95
Fall time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4
Ω
tf
- 40 60
Gate charge at threshold
VDD = 40 V, ID
≥
0.1 A, VGS =0 to 1 V
Qg(th) - 3.3 5
nC
Gate charge at 7.0 V
VDD = 40 V, ID = 80 A, VGS =0 to 7 V
Qg(7) - 95 140
Gate charge total
VDD = 40 V, ID = 80 A, VGS =0 to 10 V
Qg(total) - 125 185
Gate plateau voltage
VDD = 40 V, ID = 80 A
V(plateau) - 5.45 -
V
Semiconductor Group 428/Jan/1998
BUZ111S
SPP80N05
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS- - 80
A
Inverse diode direct current,pulsed
TC = 25 °C
ISM - - 320
Inverse diode forward voltage
VGS = 0 V, IF = 160 A
VSD - 1.25 1.8
V
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µs
trr - 105 160
ns
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Qrr - 0.29 0.45
µC
Semiconductor Group 528/Jan/1998
BUZ111S
SPP80N05
Power dissipation
Ptot =
ƒ
(TC)
0 20 40 60 80 100 120 140 °C 180
TC
0
20
40
60
80
100
120
140
160
180
200
220
W
260
Ptot
Drain current
ID =
ƒ
(TC)
parameter: VGS
≥
10 V
0 20 40 60 80 100 120 140 °C 180
TC
0
10
20
30
40
50
60
70
A
90
ID
Safe operating area
ID =
ƒ
(VDS)
parameter: D = 0, TC = 25°C
0
10
1
10
2
10
3
10
A
ID
10 0 10 1 10 2
V VDS
R
DS(on) = V
DS / I
D
DC
10 ms
1 ms
100 µs
tp = 29.0µs
Transient thermal impedance
Zth JC =
ƒ
(tp)
parameter: D = tp / T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 628/Jan/1998
BUZ111S
SPP80N05
Typ. output characteristics
ID =
ƒ(
VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
VDS
0
20
40
60
80
100
120
140
A
180
ID
VGS [V]
a
a4.0
b
b4.5
c
c5.0
d
d5.5
e
e6.0
f
f6.5
g
g7.0
h
h7.5
i
i8.0
j
j9.0
k
k10.0
l
Ptot = 250W
l20.0
Typ. drain-source on-resistance
RDS (on) =
ƒ(
ID)
parameter: tp = 80 µs, Tj = 25 °C
0 20 40 60 80 100 120 140 A180
ID
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
0.022
Ω
0.026
RDS (on)
VGS [V] =
a
4.0
VGS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS
≥
2 x ID x RDS(on)max
012345678V10
VGS
0
20
40
60
A
100
ID
Semiconductor Group 728/Jan/1998
BUZ111S
SPP80N05
Drain-source on-resistance
RDS (on) =
ƒ
(Tj)
parameter: ID = 80 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
0.022
Ω
0.026
RDS (on)
typ
98%
Gate threshold voltage
VGS(th)= f (Tj)
parameter:VGS=VDS, ID =240µA
-60 -20 20 60 100 140 V200
Tj
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
V
5.0
VGS(th)
min
typ
max
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
0 5 10 15 20 25 30 V40
VDS
-2
10
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
Forward characteristics of reverse diode
IF =
ƒ
(VSD)
parameter: Tj, tp = 80 µs
0
10
1
10
2
10
3
10
A
IF
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
VSD
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 175 °C typ
Tj = 175 °C (98%)
Semiconductor Group 828/Jan/1998
BUZ111S
SPP80N05
Avalanche energy EAS =
ƒ
(Tj)
parameter: ID = 80 A, VDD = 25 V
RGS = 25
Ω
, L = 220 µH
20 40 60 80 100 120 140 °C 180
Tj
0
50
100
150
200
250
300
350
400
450
500
550
600
650
mJ
750
EAS
Typ. gate charge
VGS =
ƒ
(QGate)
parameter: ID puls = 80 A
0 20 40 60 80 100 120 140 nC 170
QGate
0
2
4
6
8
10
12
V
16
VGS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V(BR)DSS =
ƒ
(Tj)
-60 -20 20 60 100 °C 180
Tj
49
51
53
55
57
59
61
V
65
V(BR)DSS
