FEATURES
F or general pur pose applicat ions
M ECHANICAL DATA
Case:JEDEC MINI-MELF
Weight: Approx. 0.031 gram
(Ratings at 25 ambien t temperature unless otherwise specified)
Min. UNITS
V
μA
V
pF
ns
K/W
Storage temperature range
TSTG
Reverse breakdow n voltage @ IR=50A
Symbols
VR
ELECTRICAL CHARACTERISTICS
IR
Thermal resistance junction to ambient air
CJ
0.6
LL103A - - - LL103C
SMALL SIGNAL SCHOTTKY DIODE VOLTAGE RANGE: 40 -- 20 V
CURRENT: 400 mW
MINI-MELF
GALAXY ELECTRICAL
mW
A
Peak reverse voltage
4001)
Symbols
Polarity: Color band denotes cathode end
Junction tenperature
Power dissipation (Infini te Heat Si nk)
ABS OLUTE RATINGS (LI MITING VALUES )
VRRM
Ptot
IFSM
UNITS
V
fast switch ing and low lo gic leve l ap plic a t io ns
Metal silic on sc ho t tk y ba r rie r de vic e w hic h is pr otec t e d
by a PN junc t ion guard ring. T he low f orward voltage
drop and fast switching make it ideal for protection of
MO S devic es, steering, biasing and coupling diodes f or
RθJA
Leakage current @ VR=50V
Junction capacitance @ VR=0V,f=1MHz
Reverse recovery time @ IF=IR=50mA to 200mA,recover to 0.1 IR
Forw ard voltage drop @ IF=20mA
250
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Single cycle surge 60Hz sine wave
5.0
50
15
IF=200mA VF
trr
Max.Typ.
10
TJ
0.37
-55 ---+ 150
125
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BL
Document Number 0265018 1.
BLGALAXY ELECTRICAL
LL103A LL103B LL103C
40 30 20
LL103A
LL103B
LL103C
40
30
20
LL103A,VR=30V
LL103B,VR=20V
LL103C,VR=10V
- -
-
-
-
-
-
-
-
-
-
-
Forward continuous current I(AV) 200 m A
3.4 +0.3
-0.1 0.4±0.1
φ1.5±0.1
Cathode indif i ca tion
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Document Number 0265018 2.
FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT
XXXXXXXXX VARIATION TEMPERATURES
LL103A - - - LL103C
FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD.
XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE
XXXXXXXX-SCHOTTKY BARRIER
FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF
XXXXX COMBINATION SCHOTTKY BARRIE R AND PN
XXXXX JUNCTION GUARD RING
RATINGS AND CHARACTERISTIC CURVES
FIG.4 -- TYPICAL CAPACITANCE CURVE AS A
JUNCTION OF REVERSE VOLTAGE
BLGALAXY ELECTRICAL
I Forward Current ( mA)
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
0 100 200 300 400 500 600 700 800 900 1000
VF Forward Voltage ( mV )
F
1000
100
10
1
0.1
0.01
I Forward Current (A)
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0
V
F
Forward Voltage(V)
F
0
5
10
15
20
25
30
0 5 10 15 20 25 30
V
R
Reverse Voltage(V)
C Diode Capacitance ( pF )
D
f=1MHz
1
10
100
1000
10000
0 20 40 60 80 100 120 140 160
T
j
Junction Temperature (°
C)
I Reverse Current (A )
R