2N6058 PBFREE - CENTRAL SEMICONDUCTOR

2N6050 2N6051 2N6052

MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6057 2N6058 2N6059 UNITS

Collector-Base Voltage VCBO 60 80 100 V

Collector-Emitter Voltage VCEO 60 80 100 V

Emitter-Base Voltage VEBO 5.0 V

Continuous Collector Current IC 12 A

Peak Collector Current ICM 20 A

Continuous Base Current IB 0.2 A

Power Dissipation PD 150 W

Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C

Thermal Resistance JC 1.17 °C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

ICEV V

CE=Rated VCEO, VEB=1.5V 0.5 mA

ICEV V

CE=Rated VCEO, VEB=1.5V, TC=150°C 5.0 mA

ICEO V

CE=½Rated VCEO 1.0 mA

IEBO V

EB=5.0V 2.0 mA

BVCEO I

C=100mA, (2N6050, 2N6057) 60 V

BVCEO I

C=100mA, (2N6051, 2N6058) 80 V

BVCEO I

C=100mA, (2N6052, 2N6059) 100 V

VCE(SAT) I

C=6.0A, IB=24mA 2.0 V

VCE(SAT) I

C=12A, IB=120mA 3.0 V

VBE(SAT) I

C=12A, IB=120mA 4.0 V

VBE(ON) V

CE=3.0V, IC=6.0A 2.8 V

hFE V

CE=3.0V, IC=6.0A 750 18K

hFE V

CE=3.0V, IC=12A 100

hfe V

CE=3.0V, IC=5.0A, f=1.0kHz 300

fT V

CE=3.0V, IC=5.0A, f=1.0MHz 4.0 MHz

Cob V

CB=10V, IE=0, f=100kHz (PNP types) 500 pF

Cob V

CB=10V, IE=0, f=100kHz (NPN types) 300 pF

2N6050 2N6051 2N6052 PNP

2N6057 2N6058 2N6059 NPN

COMPLEMENTARY SILICON

DARLINGTON POWER

TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6050, 2N6057

series types are complementary silicon Darlington

power transistors, manufactured by the epitaxial base

process, designed for high gain amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-3 CASE

R1 (18-September 2012)

www.centralsemi.com

2N6050 2N6051 2N6052 PNP

2N6057 2N6058 2N6059 NPN

COMPLEMENTARY SILICON

DARLINGTON POWER

TRANSISTORS

TO-3 CASE - MECHANICAL OUTLINE

LEAD CODE:

1) Base

2) Emitter

Case) Collector

MARKING:

FULL PART NUMBER

www.centralsemi.com

R1 (18-September 2012)

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(001)

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