IRGP4086PBF - INTERNATIONAL RECTIFIER

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4/17/08

IRGP4086PbF

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced

trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel

efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP

applications.

Features

l Advanced Trench IGBT Technology

l Optimized for Sustain and Energy Recovery

Circuits in PDP Applications

l Low VCE(on) and Energy per Pulse (EPULSETM)

for Improved Panel Efficiency

l High Repetitive Peak Current Capability

l Lead Free Package

PDP TRENCH IGBT

GC E

Gate Collector Em itter

TO-247AC

PD - 97132

n-channel

VCE min 300 V

VCE(ON) typ. @ IC = 70A 1.90 V

IRP max @ TC= 25°C c250 A

TJ max 150 °C

Key Parameters

Absolute Maximum Ratings

Parameter Units

VGE Gate-to-Emitter Voltage V

IC @ TC = 25°C Continuous Collector Current, VGE @ 15V A

IC @ TC = 100°C Continuous Collector, VGE @ 15V

IRP @ TC = 25°C Repetitive Peak Current c

PD @TC = 25°C Power Dissipation W

PD @TC = 100°C Power Dissipation

Linear Derating Factor W/°C

TJ Operating Junction and °C

TSTG Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw N

Thermal Resistance

Parameter Typ. Max. Units

RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) d––– 0.8

RθCS Case-to-Sink (flat, greased surface) 0.24 ––– °C/W

RθJA Junction-to-Ambient (typical socket mount) d––– 40

Weight 6.0 (0.21) ––– g (oz)

250

300

-40 to + 150

10lbxin (1.1Nxm)

160

1.3

Max.

±30

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Notes:

 Half sine wave with duty cycle = 0.1, ton=2μsec.

 Rθ is measured at TJ of approximately 90°C.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BVCES Collector-to-Emitter Breakdown Volta

300 ––– ––– V

ΔΒVCES/ΔTJ Breakdown Voltage Temp. Coefficien

––– 0.29 ––– V/°C

––– 1.29 1.46

––– 1.49 1.67

––– 1.90 2.10 V

––– 2.57 2.96

––– 2.27 –––

VGE(th) Gate Threshold Voltage 2.6 ––– 5.0 V

ΔVGE(th)/ΔTJGate Threshold Voltage Coefficient ––– -11 ––– mV/°C

ICES Collector-to-Emitter Leakage Current ––– 2.0 25 μA

––– 5.0 –––

––– 100 –––

IGES Gate-to-Emitter Forward Leakage ––– ––– 100 nA

Gate-to-Emitter Reverse Leakage ––– ––– -100

gfe Forward Transconductance ––– 29 ––– S

QgTotal Gate Charge ––– 65 ––– nC

Qgc Gate-to-Collector Charge ––– 22 –––

td(on) Turn-On delay time — 36 — IC = 25A, VCC = 196V

trRise time — 31 — ns RG = 10Ω, L=200μH, LS= 200nH

td(off) Turn-Off delay time — 112 — TJ = 25°C

tfFall time — 65 —

td(on) Turn-On delay time — 30 — IC = 25A, VCC = 196V

trRise time — 33 — ns RG = 10Ω, L=200μH, LS= 200nH

td(off) Turn-Off delay time — 145 — TJ = 150°C

tfFall time — 98 —

tst Shoot Through Blocking Time 100 ––– ––– ns

EPULSE Energy per Pulse μJ

Ciss Input Capacitance ––– 2250 –––

Coss Output Capacitance ––– 110 ––– pF

Crss Reverse Transfer Capacitance ––– 58 –––

LCInternal Collector Inductance ––– 5.0 ––– Between lead,

nH 6mm (0.25in.)

LEInternal Emitter Inductance ––– 13 ––– from package

VCE = 30V

VGE = 0V

L = 220nH, C= 0.40μF, VGE = 15V

Conditions

VGE = 0V, ICE = 1 mA

Reference to 25°C, ICE = 1mA

VGE = 15V, ICE = 120A e

VGE = 15V, ICE = 25A e

VGE = 15V, ICE = 70A e

VGE = 15V, ICE = 40A e

VCE = 300V, VGE = 0V, TJ = 100°C

and center of die contact

VGE = 30V

VGE = -30V

ƒ = 1.0MHz, See Fig.13

––– 1432 –––

VCE = 25V, ICE = 25A

VCE = 200V, IC = 25A, VGE = 15Ve

VCC = 240V, VGE = 15V, RG= 5.1Ω

VCC = 240V, RG= 5.1Ω, TJ = 25°C

L = 220nH, C= 0.40μF, VGE = 15V

VCC = 240V, RG= 5.1Ω, TJ = 100°C

Static Collector-to-Emitter Voltage

VCE(on)

VGE = 15V, ICE = 70A, TJ = 150°C

––– 1075 –––

VCE = VGE, ICE = 500μA

VCE = 300V, VGE = 0V

VCE = 300V, VGE = 0V, TJ = 150°C

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Fig 1. Typical Output Characteristics @ 25°C

Fig 3. Typical Output Characteristics @ 125°C Fig 4. Typical Output Characteristics @ 150°C

Fig 2. Typical Output Characteristics @ 75°C

Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage

0 4 8 12 16

VCE (V)

120

160

200

240

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

VGE = 6.0V

0481216

VCE (V)

120

160

200

240

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

VGE = 6.0V

0481216

VCE (V)

120

160

200

240

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

VGE = 6.0V

0481216

VCE (V)

120

160

200

240

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

VGE = 6.0V

2 4 6 8 10 12 14 16

VGE (V)

120

160

200

240

ICE (A)

TJ = 25°C

TJ = 150°C

5101520

VGE (V)

VCE (V)

TJ = 25°C

TJ = 150°C

IC = 25A

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Fig 7. Maximum Collector Current vs. Case Temperature Fig 8. Typical Repetitive Peak Current vs. Case Temperature

Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage

Fig 9. Typical EPULSE vs. Collector Current

Fig 11. EPULSE vs. Temperature Fig 12. Forward Bias Safe Operating Area

0 25 50 75 100 125 150

TC, Case Temperature (°C)

IC, Collector Current (A)

25 50 75 100 125 150

Case Temperature (°C)

100

200

300

Repetitive Peak Current (A)

ton= 2μs

Duty cycle = 0.1

Half Sine Wave

1 10 100 1000

VCE (V)

100

1000

IC (A)

10 μs

100 μs

1ms

25 50 75 100 125 150

TJ, Temperature (ºC)

400

800

1200

1600

2000

Energy per Pulse (μJ)

VCC = 240V

L = 220nH

t = 1μs half sine C= 0.4μF

C= 0.3μF

C= 0.2μF

150 160 170 180 190 200 210 220 230 240

VCE, Collector-to-Emitter Voltage (V)

200

400

600

800

1000

1200

1400

1600

Energy per Pulse (μJ)

L = 220nH

C = 0.4μF100°C

25°C

160 170 180 190 200 210 220 230

IC, Peak Collector Current (A)

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

Energy per Pulse (μJ)

VCC = 240V

L = 220nH

C = variable 100°C

25°C

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Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)

Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage

0100 200 300

VCE (V)

100

1000

10000

Capacitance (pF)

Cies

Coes

Cres

0 20406080100

QG Total Gate Charge (nC)

VGE, Gate-to-Source Voltage (V)

VDS= 240V

VDS= 200V

VDS= 150V

ID= 25A

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z

thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W)

τι (sec)

0.084697 0.000038

0.374206 0.001255

0.341867 0.013676

Ci= τi/Ri

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Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms

Fig 16c. EPULSE Test Waveforms

VCC

DUT

Fig. 17 - Gate Charge Circuit (turn-off)

DRIVER

DUT

VCC

Ipulse

Energy

Current

PULSE A

PULSE B

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Data and specifications subject to change without notice.

This product has been designed for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.04/08

The specifications set forth in this data sheet are the sole and

exclusive specifications applicable to the identified product,

and no specifications or features are implied whether by

industry custom, sampling or otherwise. We qualify our

products in accordance with our internal practices and

procedures, which by their nature do not include qualification to

all possible or even all widely used applications. Without

limitation, we have not qualified our product for medical use or

applications involving hi-reliability applications. Customers are

encouraged to and responsible for qualifying product to their

own use and their own application environments, especially

where particular features are critical to operational

performance or safety. Please contact your IR representative if

you have specific design or use requirements or for further

information.

TO-247AC package is not recommended for Surface Mount Application.

TO-247AC Part Marking Information

TO-247AC Package Outline Dimensions are shown in millimeters (inches)

YEAR 1 = 2001

DAT E CODE

PART NUMBER

INT ERNAT IONAL

LOGO

RECTIFIER

ASSEMBLY

56 57

IRFPE30

135H

LINE H

indi cates "L ead-F r ee" WEEK 35LOT CODE

IN THE ASSEMBLY LINE "H"

AS S E MB LED ON WW 35, 2001

Note: "P" in assembly line position

EXAMPLE:

WI T H AS S E MB L Y

THIS IS AN IRFPE30

LOT CODE 5657

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/