BSL314PE
OptiMOS™-P 3 Small-Signal-Transistor
Features
• Dual P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according AEC Q101
• 100% Lead-free; RoHS compliant
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter
1)
Symbol Conditions Unit
Value
PG-TSOP-6
3
12
VDS 30 V
RDS(on),max VGS=-10 V 140 mΩ
VGS=-4.5 V 230
ID-1.5 A
Product Summary
Type Package Tape and Reel Information Marking Lead Free Packing
BSL314PE PG-TSOP-6 L6327: 3000 pcs/ reel sPT Yes Non dry
4
5
6
Continuous drain current IDTA=25 °C -1.5 A
TA=70 °C -1.2
Pulsed drain current ID,pulse TA=25 °C -6.1
Avalanche energy, single pulse EAS ID=-1.5 A, RGS=25 Ω6mJ
Reverse diode dv/dtdv/dt
ID=-1.5 A,
VDS=-16 V,
di/dt=-200A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation2) Ptot TA=25 °C W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
ESD Class JESD22-A114 -HBM 1000V to 2000V
Soldering Temperature 260 °C °C
IEC climatic category; DIN IEC 68-1 55/150/56 °C
1) Remark: one of both trainsistors in operation.
0.5
Rev 2.2page 1 2012-10-22
BSL314PE
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient RthJA minimal footprint 2) - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS= 0V, ID=-250µA -30 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=-6.3µA -1 -1.5 -2
Drain-source leakage current IDSS VDS=-30V, VGS=0 V,
Tj=25 °C ---1
μA
VDS=-30V, VGS=0V,
Tj=150 °C - - -100
Values
Rev 2.2page 2 2012-10-22
Gate-source leakage current IGSS VGS=-20V, VDS=0V ---5
μA
Drain-source on-state resistance RDS(on) VGS=-4.5V,
ID=-1.2A - 153 230 mΩ
VGS=-10V, ID=-1.5A - 107 140
Transconductance gfs |VDS|>2|ID|RDS(on)max,
ID=-1.2 A 3-S
2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB.
BSL314PE
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss - 221 294 pF
Output capacitance Coss - 126 168
Reverse transfer capacitance Crss -711
Turn-on delay time td(on) - 5.1 - ns
Rise time tr- 3.9 -
Turn-off delay time td(off) - 12.4 -
Fall time tf- 2.8 -
Gate Charge Characteristics
Gate to source charge Qgs - -0.7 - nC
Gate to drain charge Qgd - -0.3 -
Gate charge total Qg- -2.9 -
Gate plateau voltage Vplateau - -3.2 - V
Values
VGS=0 V,
VDS=-15 V, f=1 MHz
VDD=-15V,
VGS=-10 V,
ID=-1.5 A, RG=6 Ω
VDD=-15 V,
ID=-1.5 A,
VGS=0 to -10 V
Rev 2.2page 3 2012-10-22
Reverse Diode
Diode continous forward current IS- - -0.5 A
Diode pulse current IS,pulse - - -6.1
Diode forward voltage VSD VGS=0 V, IF=-1.5A,
Tj=25 °C - 0.8 1.1 V
Reverse recovery time trr - 12.5 - ns
Reverse recovery charge Qrr - 4.3 - nC
VR=-15 V, IF=-1.5A,
diF/dt=100 A/µs
TA=25 °C
BSL314PE
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≤-10 V
0
0.125
0.25
0.375
0.5
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.4
0.8
1.2
1.6
0 20 40 60 80 100 120 140 160
ID[A]
TA[°C]
Rev 2.2page 4 2012-10-22
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-2 10-1 100101102
10-4
10-3
10-2
10-1
100
101
ID[A]
VDS [V]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100101
10-1
100
101
102
ZthJA [K/W]
tp[s]
0
0.125
0.25
0.375
0.5
0 40 80 120 160
Ptot [W]
TA[°C]
BSL314PE
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
2.8 V
3 V
3.3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
1
2
3
4
5
6
7
8
012345
ID[A]
VDS [V]
3 V
3.3 V 3.5 V 4 V
4.5 V
5 V
10 V
0
50
100
150
200
250
300
350
400
012345678
RDS(on) [mΩ]
ID[A]
Rev 2.2page 5 2012-10-22
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
0
1
2
3
4
5
6
7
8
012345678
gfs [S]
ID[A]
2.8 V
3 V
3.3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
1
2
3
4
5
6
7
8
012345
ID[A]
VDS [V]
3 V
3.3 V 3.5 V 4 V
4.5 V
5 V
10 V
0
50
100
150
200
250
300
350
400
012345678
RDS(on) [mΩ]
ID[A]
25 °C
BSL314PE
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-1.5 A; VGS=-10 V VGS(th)=f(Tj); VDS=VGS; ID=-6.3 µA
parameter: ID
typ
98 %
0
50
100
150
200
250
-60 -20 20 60 100 140 180
RDS(on) [mΩ]
Tj[°C]
typ
98 %
2 %
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Rev 2.2page 6 2012-10-22
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
50
100
150
200
250
-60 -20 20 60 100 140 180
RDS(on) [mΩ]
Tj[°C]
typ
98 %
2 %
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
100
101
102
103
0 5 10 15 20
C[pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-3
10-2
10-1
100
101
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
IF[A]
VSD [V]
BSL314PE
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=-1.5 A pulsed
parameter: Tj(start) parameter: VDD
4 V
10 V
16 V
0
2
4
6
8
10
12
0123
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100101102103
10-1
100
101
IAV [A]
tAV [µs]
Rev 2.2page 7 2012-10-22
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=-250 µA
27
28
29
30
31
32
33
-60 -20 20 60 100 140
VBR(DSS) [V]
Tj[°C]
4 V
10 V
16 V
0
2
4
6
8
10
12
0123
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100101102103
10-1
100
101
IAV [A]
tAV [µs]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
BSL314PE
Packa
g
e Outline:
Footprint: Packaging:
TSOP-6
GPX09300
1.6±0.1
±0.1
2.5
±0.1
0.25
1.1 MAX.
0.1 MAX.
(2.25)
+0.1
-0.05
0.35
(0.35)
10
˚
MAX.
10
˚
MAX.
2.9
±0.2
B
0.2 M
B6x
0.95
1.9
A
0.2 A
M
0.15
+0.1
-0.06
321
456
0.5
4
0.2
Rev 2.2page 8 2012-10-22
Dimensions in mm
0.5
0.95
1.9
2.9
HLG09283
Remark: Wave soldering possible dep.
on customers process conditions
2.7
4
3.15
Pin 1
marking CPWG5899
8
0.2
1.15
BSL314PE
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.2page 9 2012-10-22
