Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 5 1Publication Order Number:
MBRS140T3/D
MBRS140T3
Preferred Device
Surface Mount
Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the–art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
•Small Compact Surface Mountable Package with J–Bend Leads
•Rectangular Package for Automated Handling
•Highly Stable Oxide Passivated Junction
•Very Low Forward Voltage Drop
(0.55 Volts Max @ 1.0 A, TJ = 25°C)
•Excellent Ability to Withstand Reverse Avalanche Energy Transients
•Guardring for Stress Protection
Mechanical Characteristics
•Case: Epoxy, Molded
•Weight: 95 mg (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Shipped in 12 mm Tape and Reel, 2500 units per reel
•Cathode Polarity Band
•Marking: B14
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40 V
Average Rectified Forward Current
(TL = 115°C) IF(AV) 1.0 A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM 40 A
Operating Junction Temperature TJ–65 to +125 °C
Device Package Shipping
ORDERING INFORMATION
SMB
CASE 403A
PLASTIC
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MBRS140T3 SMB 2500/Tape & Reel
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
40 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
B14
B14 = Device Code
MBRS140T3
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance — Junction to Lead
(TL = 25°C) RθJL 12 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 1.0 A, TJ = 25°C) VF0.6 Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR1.0
10
mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.
iF, INSTANTANEOUS FORWARD CURRENT (AMPS
)
1
0.5
0.2
0.1
0.05
0.03
0.02
10.1 0.2 0.3 0.4 0.5 0.6 0.7
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
IR, REVERSE CURRENT (mA)
100
10
1
0.1
0.01 0 4 8 121620 242832 3640
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
TJ = 125°C
25°C
20
2
0.2
0.02
30
3
0.3
0.03
50
5
0.5
0.05
0.7
0.07
0.3
0.8 0.9 1.1
TC = 100°C
TC = 25°C
100°C
75°C
MBRS140T3
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3
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
8
7
6
5
4
3
2
1
050 60 70 80 90 100 110 120 130
TC, CASE TEMPERATURE (°C)
SQUARE WAVE
DC
TJ = 125°C
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
5
4
3
2
1
0012345
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
20
10
5
π
DC
IPK
IAV
=
SQUARE
WAVE
RATED VOLTAGE APPLIED
RθJC = 12°C/W
TJ = 125°C
C, CAPACITANCE (pF)
160
140
120
100
80
60
40
20
00 4 8 121620242832
VR, REVERSE VOLTAGE (VOLTS)
36 40
180
200
4030
9
10
CAPACITANCE
LOAD
NOTE: TYPICAL CAPACITANCE
AT 0 V = 160 pF
Figure 3. Typical Capacitance
Figure 4. Current Derating (Case) Figure 5. Power Dissipation
MINIMUM SOLDER PAD SIZES
mm
inches
0.085
2.159
0.108
2.743
0.089
2.261
MBRS140T3
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4
PACKAGE DIMENSIONS
SMB
PLASTIC PACKAGE
CASE 403A–03
ISSUE D
A
S
DB
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.160 0.180 4.06 4.57
B0.130 0.150 3.30 3.81
C0.075 0.095 1.90 2.41
D0.077 0.083 1.96 2.11
H0.0020 0.0060 0.051 0.152
J0.006 0.012 0.15 0.30
K0.030 0.050 0.76 1.27
P0.020 REF 0.51 REF
S0.205 0.220 5.21 5.59
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MBRS140T3/D
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