SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - JUNE 1995
PARTMARKING DETAILS BCW31 D1 BCW31R D4
BCW32 D2 BCW32R D5
BCW33 D3 BCW33R D6
COMPLEMENTARY TYPES BCW31 - BCW29
BCW32 - BCW30
BCW33 - N/A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VA LUE UN I T
Collector-Base Voltage VCBO 32 V
Collector-Emitter Voltage VCEO 32 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 200 mA
Continuous Collector Current IC100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base - Emitter Voltage VBE 550 700 mV IC=2mA, VCE = 5V
Collector-Emitter
Saturation Voltage
VCE(SAT) 120
210
250 mV
mV
IC=10mA, IB = 0.5mA
IC=50mA, IB =2.5mA
Base-Emitter
Saturation Voltage
VBE(SAT) 750
850
mV
mV
IC=10mA, IB=0.5mA
IC =50mA, IB=2.5mA
Collector- Base Cut-Off Current ICBO 100
10
nA
µA
IE=0, VCB=20V
IE=0,VCB=20V,Tj =100°C
Static Forward
Current Transfer
Ratio
BCW31 hFE 110
90
220
IC=10µA, VCE=5V
IC=2mA, VCE=5V
BCW32 hFE 200
150
450
IC=10µA, VCE=5V
IC=2mA, VCE=5V
BCW33 hFE 420
270
800
IC=10µA, VCE=5V
IC=2mA, VCE=5V
Transition Frequency fT300 MHz IC=10mA, VCE=5V
f = 35MHz
Collector Capacitance CTC 4pFI
E =Ie =0, VCB =10V
f= 1MHz
Noise Figure N 10 dB IC= 200mA, VCE =5V
RS =2KΩ, f=1KHz
B= 200Hz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
BCW31
BCW32
BCW33
PAGE NO
C
B
E
