THERMAL DATA
Rthj-amb •
Rthj-SR • Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Substrate Max 375
278
oC/W
oC/W
•Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm2
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0) V
CE =RatedV
CES
VCE =RatedV
CES Tamb = 150 oC20
20 nA
µA
IEBO Collector Cut-off
Current (IE=0) V
EB =4V 20 nA
V
(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB=0)
I
C=10mA 45 V
V
V
(BR)CES∗Collector-Emitter
Breakdown Voltage
(VEB =0)
I
C=10µA75
V
V
V
(BR)EBO Emitter-Base
Breakdown Voltage
(IC=0)
I
C=10µA5V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC=100mA I
B=10mA
I
C=500mA I
B=50mA 0.3
0.7 V
V
VBE(sat)∗Collector-Base
Saturation Voltage IC=100mA I
B=10mA
I
C=500mA I
B=50mA 1.25
2V
V
hFE∗DC Current Gain IC=0.1mA V
CE =10V
for group F
for group G
for group H
IC=10mA V
CE =1V
for group F
for group G
for group H
IC=100mA V
CE =1V
for group F
for group G
for group H
IC=500mA V
CE =2V
for group F
for group G
for group H
35
50
80
75
110
180
100
160
250
35
60
100
250
400
630
fTTransition Frequency IC=20mA V
CE = 10V f = 100MHz 100 MHz
CCB Collector Base
Capacitance IE=0 V
CB = 10 V f = 1 MHz 12 pF
CEB Emitter Base
Capacitance IC=0 V
CE =0.5V f=1MHz 80 pF
NF Noise Figure VCE =5V I
C=0.2mA f=1KHz
∆f = 200 Hz RG=2KΩ210dB
t
on Switching On Time IC=150mA I
B1 =-I
B2 =15 mA
RL=150Ω100 ns
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤2%
BCW66
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