SILICON PLANAR DARLINGTON POWER TRANSISTORS
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL TIP140F TIP141F TIP142F UNIT
TIP145F TIP146F TIP147F
Collector-Base Voltage VCBO 60 80 100 V
Collector-Emitter Voltage VCEO V
Emitter-Base Voltage VEB0 V
Collector Current ICA
Collector Peak Current (repetitive) ICM A
Base Current IBA
Total Power Dissipation @ Tc <25ºC PDW
Operating And Storage Junction
Temperature Range Tj, Tstg ºC
THERMAL RESISTANCE
From Junction to case Rth (j-c) ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Cutoff Current ICBO VCB =Rated VCBO, IE=0 1.0 mA
Collector Cutoff Current ICEO VCE =1/2 rated VCEO, IB=0 2.0 mA
Emitter Cutoff Current IEBO VEB =5.0 V, IC=0 2.0 mA
Collector-Emitter Sustaining Voltage *VCEO (sus) IC =30mA, IB=0
TIP140F/145F 60 V
80 V
TIP142F/147F 100 V
Collector-Emitter Saturation Voltage *VCE (sat) IC =5A, IB=10mA 2.0 V
I
=10A, I
=40mA 3.0 V
Base-Emitter On Voltage *VBE (on) IC =10A, VCE =4 V 3.0 V
DC Current Gain *hFE IC =5A, VCE =4V 1000
500
SWITCHING TIME
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Turn on time ton 0.9 µs
Turn off time toff 4.0 µs
*Pulsed : Pulse duration=200µµs, duty cycle=1.5%
- 65 to +150
1.0
IC=10A, IB1=40mA, IB2
- 40mA, RL=3Ω
10
0.5
60
20
60 80 100
5.0
BC
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