MMST4403
Datasheet number: DS30083 Rev. 8 - 2 1 of 5
www.diodes.com June 2011
© Diodes Incorporated
MMST4403
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMST4401)
• Ultra-Small Surface Mount Package
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Weight: 0.006 grams (approximate)
Ordering Information (Note 3)
Device Packaging Shipping
MMST4403-7-F SOT-323 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top view Device symbol Pinout – top view
SOT-323
K3T = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = Se
p
tembe
r
K3T
YM
MMST4403
Datasheet number: DS30083 Rev. 8 - 2 2 of 5
www.diodes.com June 2011
© Diodes Incorporated
MMST4403
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current – Continuous (Note 4) IC -600 mA
Power Dissipation (Note 4) Pd 200 mW
Thermal Resistance, Junction to Ambient (Note 4) RθJA 625 K/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch;
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ V IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -40 ⎯ V IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -100μA, IC = 0
Collector Cutoff Current ICEX ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V
Base Cutoff Current IBL ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
30
60
100
100
20
⎯
⎯
⎯
300
⎯
⎯
IC = -100μA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -150mA, VCE = -2.0V
IC = -500mA, VCE = -2.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.40
-0.75 V IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage VBE(SAT) -0.75
⎯
-0.95
-1.30 V IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cob ⎯ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance Ceb ⎯ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.5 15 kΩ
VCE = -10V, IC = -1.0mA,
f = 1.0MHz
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 60 500 ⎯
Output Admittance hoe 1.0 100 μS
Current Gain-Bandwith Product fT 200 ⎯ MHz VCE = -10V, IC = -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td ⎯ 15 ns VCE = -30V, IC = -150mA,
VBE(OFF) = -2.0V, IB1 = -15mA
Rise Time tr ⎯ 20 ns
Storage Time ts ⎯ 225 ns VCE = -30V, IC = -150mA,
IB1 = IB2 = -15mA
Fall Time tr ⎯ 30 ns
Notes: 5. Short duration pulse test used to minimize self-heating effect
MMST4403
Datasheet number: DS30083 Rev. 8 - 2 3 of 5
www.diodes.com June 2011
© Diodes Incorporated
MMST4403
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
1
100
1,000
110
100 1,000
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 DC Current Gain vs. Collector Current
C
10
1.0
5.0
20
10
-0.1 -10
-1.0 -30
C
A
P
A
C
I
T
AN
C
E (
p
F
)
REVERSE VO LTS (V)
Fig. 3 Typical Capacitance
C
obo
C
ibo
30
I BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
B
V
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
0.001 0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 110 100
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
110
100 1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V )
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation V oltage
vs. Col lector Cur re nt
C
T = 25°C
A
T = 50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.
5
I
I
C
B
= 10
0.1 1 10 100
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 6 Base-Emitter Voltage
vs. Col lector Current
C
0.2
0.3
0.4
0.5
0.9
0.8
0.7
0.6
1,000
MMST4403
Datasheet number: DS30083 Rev. 8 - 2 5 of 5
www.diodes.com June 2011
© Diodes Incorporated
MMST4403
Suggested Pad Layout
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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changes without further notice to this doc ument and an y product described herein. Diodes Incorporat ed does not assu me any liability arising
out of the application or use of this document or any product descr ibed herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perfo rm can be re asonabl y expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes I ncorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-
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Incorporated and its representatives against any d amages arising out of the use of Diodes Incorpor ated products in such safety-critical, life
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Copyright © 2011, Diodes Incorporated
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