RS1A - RS1M — Fast Rectifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RS1A - RS1M Rev. D1 1
September 2009
RS1A - RS1M
Fast Rectifiers
Features
• Glass passivated junction.
• For surface mounted applications.
• Built in strain relief, ideal for automated placement.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
1A 1B 1D 1G 1J 1K 1M
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
IF(AV) Average Rectified Forward Current
@ TA = 100°C 1.0 A
IFSM Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave 30 A
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature -55 to +150 °C
Symbol Parameter Value Units
PDPower Dissipation 1.19 W
RθJA Thermal Resistance, Junction to Ambient* 105 °C/W
RθJL Thermal Resistance, Junction to Lead* 32 °C/W
Symbol Parameter Value Units
1A 1B 1D 1G 1J 1K 1M
VFForward Voltage @ 1.0A 1.3 V
trr Reverse Recovery Time
IF=0.5A, IR=1.0A, Irr=0.25A 150 250 500 ns
IRReverse Current @ rated VR TA=25°C
TA=125°C5.0
50 μA
μA
CTTotal Capacita nce
VR= 4.0V, f = 1.0MHz 10 pF
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
RS1A - RS1M — Fast Rectifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RS1A - RS1M Rev. D1 2
Typical Performance Characteristics
Figure 1. Forward Cur rent Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacit ance
μA
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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