Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 10
Publication Order Number:
BAT54SWT1/D
1
BAT54SWT1G,
NSVBAT54SWT1G
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR30 V
Forward Power Dissipation
@ TA = 25C
Derate above 25C
PF200
1.6
mW
mW/C
Forward Current (DC) IF200 Max mA
Non−Repetitive Peak Forward Current
tp < 10 msec
IFSM 600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IFRM 300
mA
Junction Temperature TJ−55 to 125 C
Storage Temperature Range Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
30 VOLT
DUAL SERIES SCHOTTKY
BARRIER DIODES
3
CATHODE/ANODE
1
ANODE
2
CATHODE
Device Package Shipping†
ORDERING INFORMATION
BAT54SWT1G SOT−323
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT−323
CASE 419
STYLE 9
MARKING DIAGRAM
B8M G
G
B8 = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
1
NSVBAT54SWT1G SOT−323
(Pb−Free)
3,000 /
Tape & Reel
BAT54SWT1G, NSVBAT54SWT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R 30 − −
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−7.6 10
pF
Reverse Leakage
(VR = 25 V)
IR
−0.5 2.0
mAdc
Forward Voltage
(IF = 0.1 mAdc)
VF
−0.22 0.24
Vdc
Forward Voltage
(IF = 30 mAdc)
VF
−0.41 0.5
Vdc
Forward Voltage
(IF = 100 mAdc)
VF
−0.52 0.8
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
− − 5.0
ns
Forward Voltage
(IF = 1.0 mAdc)
VF
−0.29 0.32
Vdc
Forward Voltage
(IF = 10 mAdc)
VF
−0.35 0.40
Vdc
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820W
0.1 mF
DUT
VR
100 mH
0.1 mF
50 WOUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpT
10%
90%
IF
IR
trr T
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAT54SWT1G, NSVBAT54SWT1G
http://onsemi.com
3
CT
, TOATAL CAPACITANCE (pF)
100
0.0 0.1
VF
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
510
15 20 25
0
VR, REVERSE VOLTAGE (VOLTS)
51015 30
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
−40C
25C
TA = 150C
0.6
−55C
150C
125C
100
1000
30
2520
IR, REVERSE CURRENT (mA)
IF
, FORWARD CURRENT (mA)
14
12
10
8
6
4
2
0
TA = 125C
TA = 85C
TA = 25C
BAT54SWT1G, NSVBAT54SWT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−323 (SC−70)
CASE 419−04
ISSUE N
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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BAT54SWT1/D
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