2SC5138
Silicon NPN Epitaxial
ADE-208-225A (Z)
2nd. Edition
Mar. 2001
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 6 GHz typ
• High gain, low noise figure
PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz
Outline
1
2
3
1. Emitter
2. Base
3. Collector
SMPAK
Note: Marking is “YL–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2SC5138
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 20 V
Collector to emitter voltage VCEO 12 V
Emitter to base voltage VEBO 2V
Collector current IC30 mA
Collector power dissipation PC80 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector cutoff current ICBO ——10µAV
CB = 20 V, IE = 0
ICEO ——1 mAV
CE = 12 V, RBE = ∞
Emitter cutoff current IEBO ——10µAV
EB = 2 V, IC = 0
DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 10 mA
Collector output capacitance Cob — 0.65 1.05 pF VCB = 5 V, IE = 0,
f = 1 MHz
Gain bandwidth product fT4 6 — GHz VCE = 5 V, IC = 10 mA
Power gain PG 9.5 13 — dB VCE = 5 V, IC = 10 mA,
f = 900 MHz
Noise figure NF — 1.8 3.0 dB VCE = 5 V, IC = 5 mA,
f = 900 MHz
2SC5138
3
160
120
80
40
0
Ambient Temperature Ta (°C)
Collector Power Dissipation Pc (mW)
50 100 150 200
Maximum Collector Dissipation Curve 200
160
120
80
40
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
0100
DC Current Transfer Ratio vs.
Collector Current
0.01 0.1 1 10
V = 5 V
Pulse Test
CE
10
8
6
4
2
12 51020
Collector Current I (mA) 50
C
0
V = 5V
CE
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product f (GHz)
T
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.1 0.2 0.5 1 2 5 10 20
Collector Output Capacitance vs.
Collector to Base Voltage
1.0
0.2
0.4
I = 0
f = 1 MHz
E
0
0.6
0.8
2SC5138
4
20
16
12
8
4
Collector Current I (mA) 50
Power Gain PG (dB)
C
0
Power Gain vs. Collector Current
0.1 0.2 0.5 1 2 5 10 20
f = 900 MHz
V = 5V
CE
10
8
6
4
2
Collector Current I (mA) 50
Noise Figure NF (dB)
C
0
Noise Figure vs. Collector Current
0.1 0.2 0.5 1 2 5 10 20
f = 900 MHz
V = 5V
CE
2SC5138
5
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
Ω
10
5
4
3
2
1.5
1
.8
–2
–3–4
–5
–10
.6
.4
.2
0
–.2
–.4
–.6 –.8 –1 –1.5
.2 .4 .6 .8 2345
1.5 10
S11 Parameter vs. Frequency
1.0
Scale: 4 / div.
0°
30°
60°
90°
120°
150°
180°
–150°
–90°–60°
–30°
–120°
S21 Parameter vs. Frequency
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
Ω
Scale: 0.04 / div.
0°
30°
60°
90°
120°
150°
180°
–150°
–90°–60°
–30°
–120°
S12 Parameter vs. Frequency
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
Ω
10
5
4
3
2
1.5
1
.8
–2
–3–4
–5
–10
.6
.4
.2
0
–.2
–.4
–.6 –.8 –1 –1.5
.2 .4 .6 .8 2345
1.5 10
S22 Parameter vs. Frequency
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
Ω
1.0
2SC5138
6
Package Dimensions
1.6 ± 0.2
0.3
1.6 ± 0.2
0.4
0.5 0.5
1.0 ± 0.1
0.15
0 – 0.1
0.55
0.7 ± 0.1
+0.1
–0.05
+0.1
–0.05
0.2
+0.1
–0.05
+0.1
–0.05 0.2
12
3
0.8 ± 0.1
0.4
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
SMPAK
—
Conforms
0.003 g
As of January, 2001
Unit: mm
2SC5138
7
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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