PDTB123YT,215 - NEXPERIA

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1. Product profile

1.1 General description

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB)

Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTD123YT.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PDTB123YT

PNP 500 mA, 50 V resistor-equipped transistor;

R1 = 2.2 kΩ, R2 = 10 kΩ

Rev. 3 — 30 August 2010 Product data sheet

500 mA output current capability Reduces pick and place costs

Built-in bias resistors ±10 % resistor ratio tolerance

Simplifies circuit design AEC-Q101 qualified

Reduces component count

Digital application in automotive and

industrial segments

Cost-saving alternative for BC807 series

in digital applications

Control of IC inputs Switching loads

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - −50 V

IOoutput current - - −500 mA

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

R2/R1 bias resistor ratio 4.1 4.55 5

Product data sheet Rev. 3 — 30 August 2010 2 of 10

NXP Semiconductors PDTB123YT

PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 input (base)

2 GND (emitter)

3 output (collector)

006aaa14

sym003

Table 3. Ordering information

Type number Package

Name Description Version

PDTB123YT - plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code[1]

PDTB123YT *7Y

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - −50 V

VCEO collector-emitter voltage open base - −50 V

VEBO emitter-base voltage open collector - −5V

VIinput voltage

positive - +5 V

negative - −12 V

IOoutput current - −500 mA

Product data sheet Rev. 3 — 30 August 2010 3 of 10

NXP Semiconductors PDTB123YT

PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

Ptot total power dissipation Tamb ≤25 °C[1] -250mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --500K/W

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base

cut-off current VCB =−40 V; IE=0A - - −100 nA

VCB =−50 V; IE=0A - - −100 nA

ICEO collector-emitter

cut-off current VCE =−50 V; IB=0A - - −0.5 μA

IEBO emitter-base

cut-off current VEB =−5V; I

C=0A - - −0.65 mA

hFE DC current gain VCE =−5V;

IC=−50 mA 70 - -

VCEsat collector-emitter

saturation voltage IC=−50 mA;

IB=−2.5 mA --−0.3 V

VI(off) off-state input voltage VCE =−5V;

IC=−100 μA−0.4 −0.6 −1.0 V

VI(on) on-state input voltage VCE =−0.3 V;

IC=−20 mA −0.5 −1.0 −1.4 V

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

R2/R1 bias resistor ratio 4.1 4.55 5

Cccollector capacitance VCB =−10 V;

IE=i

e=0A;

f=100MHz

-11-pF

Product data sheet Rev. 3 — 30 August 2010 4 of 10

NXP Semiconductors PDTB123YT

PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

VCE =−5V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

Fig 1. DC current gain as a function of collector

current; typical values Fig 2. Collector- em itter saturation voltage as a

function of collector current; typical values

VCE =−0.3 V

(1) Tamb =−40 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

VCE =−5V

(1) Tamb =−40 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 3. On-state input voltage as a function of

collector current; typical values Fig 4. Off-state input voltage as a function of

collector current; typical values

006aaa357

102

103

hFE

IC (mA)

−10−1−103

−102

−1−10

(1)

(2)

(3)

006aaa358

IC (mA)

−1−102

−10

−10−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

006aaa359

IC (mA)

−10−1−103

−102

−1−10

−1

−10

VI(on)

(V)

−10−1

(1)

(2)

(3)

IC (mA)

−10−1−10−1

006aaa360

−1

−10

VI(off)

(V)

−10−1

(1)

(2)

(3)

Product data sheet Rev. 3 — 30 August 2010 5 of 10

NXP Semiconductors PDTB123YT

PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 5. Package outline SOT23 (TO-236AB)

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantit y

3000 10000

PDTB123YT SOT23 4 mm pi tch, 8 mm tape and reel -215 -2 35

Product data sheet Rev. 3 — 30 August 2010 6 of 10

NXP Semiconductors PDTB123YT

PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

11. Soldering

Fig 6. Reflow soldering footprint SOT23 (TO -2 36 AB)

Fig 7. Wave soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 3 — 30 August 2010 7 of 10

NXP Semiconductors PDTB123YT

PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTB123YT v.3 20100830 Product data sheet - PDTB123Y_SER_2

Modifications: •Type numbers PDTB123YK and PDTB123YS deleted.

•Table 7 “Characteristics”: unit for VCEsat changed from mV to V.

•Section 8 “Test information”: added.

•Section 11 “Soldering”: added.

•Section 13 “Legal information”: updated.

PDTB123Y_SER_2 20091116 Product data sheet - PDTB123Y_SER_1

PDTB123Y_SER_1 20050427 Product data sheet - -

Product data sheet Rev. 3 — 30 August 2010 8 of 10

NXP Semiconductors PDTB123YT

PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

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Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

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data sheet shall define the specification of the product as agreed between

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representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

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Semiconductors product is suit able and fit for the custome r’s applications and

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NXP Semiconductors does not accept any liabil i ty related to any default,

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customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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Export control — This document as well as the item(s) described herein

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 30 August 2010 9 of 10

NXP Semiconductors PDTB123YT

PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PDTB123YT

PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 30 August 2010

Document identifier: PDTB123YT

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5

10 Packing information . . . . . . . . . . . . . . . . . . . . . 5

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

14 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10