TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374
T4-LDS-0165 Rev. 1 (100688) Page 1 of 4
DEVICES LEVELS
2N3996 2N3997 2N3998 2N3999 JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 8.0 Vdc
Base Current IB 0.5 Adc
Collector Current IC 10
(1) Adc
Total Power Dissipation @ TA = +25°C (2)
@ TC = +100°C (3) PT 2.0
30 W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance, Junction-to-Case RθJC 3.33 °C/W
Note:
(1) This value applies for Tp ≤ 1.0ms, duty cycle ≤ 50%
(2) Derate linearly 11.4 mW/°C for TA > +25°C
(3) Derate linearly 300 mW/°C for TC > +100°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 50mAdc V(BR)CEO 80 Vdc
Collector-Emitter Breakdown Voltage
IC = 10µAdc V(BR)CBO 100 Vdc
Collector-Emitter Cutoff Current
VCE = 60Vdc ICEO 10 µAdc
Collector-Emitter Cutoff Current
VCE = 80Vdc, VBE = 0V ICES 200
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 8.0Vdc IEBO
200
10
ηAdc
µAdc
TO-111
2N3996, 2N39 97
TO-59
2N3998, 2N3 999
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0165 Rev. 1 (100688) Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 2.0Vdc
IC = 1.0Adc, VCE = 2.0Vdc
IC = 5.0Adc, VCE = 5.0Vdc
2N3996, 2N3998
hFE
30
40
15
120
IC = 50mAdc, VCE = 2.0Vdc
IC = 1.0Adc, VCE = 2.0Vdc
IC = 5.0Adc, VCE = 5.0Vdc
2N3997, 2N3999 60
80
20
240
Collector-Emitter Saturation Voltage
IC = 1.0Adc, IB = 0.1Adc
IC = 5.0Adc, IB = 0.5Adc
VCE(sat)
0.25
2.0
Vdc
Base-Emitter Saturation Voltage
IC = 1.0Adc, IB = 0.1Adc
IC = 5.0Adc, IB = 0.5Adc
VBE(sat) 0.6
1.2
1.6
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0Adc, VCE = 5.0Vdc, f = 10MHz
|hfe|
3.0
12
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 150 pF
SAFE OPERATING AREA
DC Tests
TC = +100°C, 1 Cycle, t = 1.0s
Test 1
VCE = 80Vdc, IC = 0.08Adc
Test 2
VCE = 20Vdc, IC = 1.5Adc
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0165 Rev. 1 (100688) Page 3 of 4
PACKAGE DIMENSIONS
NOTES:
1. Terminal 1, emitter; terminal 2, base; terminal 3, collector; terminal 4, case.
2. Chamfer or undercut on one or both ends of hexagonal portion is optional.
3. The outline contour with the exception of the hexagon is optional within cylinder defined by CD1 and A1.
4. Terminal r can be flattened and pierced or hook type. A visual index is required when the flattened and pierced tab
terminal contour (identical to the adjacent terminals) option is used. The case terminal (hook) is mechanically connected
to the case. The other three terminals shall be electrically isolated from the case.
5. Angular orientation of terminals with respect to hexagon is optional.
6. HT dimension does not include sealing flanges.
7. SU is the length of incomplete or undercut threads.
8. SD is the pitch diameter of coated threads. Reference: Screw threads standards for Federal Service Handbook H28, part I.
9. Dimensions are in inches.
10. Millimeters are giving for general information only.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 - Continued.
Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
CH .345 .400 8.76 10.16
A1 .250 6.35 3
CD .370 .437 9.40 11.10 3
CD1 .318 .380 8.08 9.65
HF .424 .437 10.77 11.10
PS .180 .215 4.57 5.46 5
PS1 .080 .110 2.03 2.79 5
HT .090 .140 2.29 3.56 2, 6
OAH .575 .675 14.61 17.15 1
UD .155 .189 3.94 4.80
SL .400 .455 10.16 11.56
SU .078 1.98 7
φ
T .040 .065 1.02 1.65
φ
T1 .040 .065 1.02 1.65 4
SD .190-32 UNF-2A 8
Z .002 0.05
Z1 .006 0.15
*
*
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0165 Rev. 1 (100688) Page 4 of 4
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only
2. Collector shall be electrically connected to the case. This terminal may be flattened and pierced only when the 90 degree
option is used.
3. SD is the pitch diameter of coated threads. Reference: Screw thread standards for Federal Service Handbook H28, part I.
4. The orientation of the terminals in relation to the hex flats is not controlled.
5. All three terminals.
6. The case temperature may be measured anywhere on the seating plane within .125 (3.18 mm) of the stud.
7. Terminal spacing measured at the base seat only.
8. Dimensions PS, PS1, PS2, and PS3 are measured from the centerline of terminals.
9. Maximum unthreaded dimension.
10. This dimension applies to the location of the center line of the terminals.
11. A 90 degree angle lead orientation as shown may be used at the option of the manufacturer. All dimensions of the basic
outline except PS, PS1, and the 120lead angle apply to this option.
12. Terminal 1, emitter; terminal 2, base; terminal 3, collector.
13. A slight chamfer or undercut on one or both ends of the hexagonal is optional.
14. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999
Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
CH .345 .400 8.76 10.16
A1 .250 6.35
CD1 .318 .380 8.08 9.65
CD .370 .437 9.40 11.10
HF .424 .437 10.77 11.10
PS .125 .165 3.18 4.19 4, 7, 8
PS1 .110 .145 2.79 3.68 4, 7
PS2 .090 .140 2.29 3.56 4, 7, 8
PS3 .185 .215 4.70 5.46 4, 7, 8
HT .090 .140 2.29 3.56
OAH .575 .675 14.61 17.15 5
UD .155 .189 3.94 4.80
SL .400 .455 10.16 11.56
SU .078 1.98 9
φT .040 .065 1.02 1.65
φT1 .040 .065 1.02 1.65
SD .190-32 UNF-2A 3
*
