1N5817, 1N5818, 1N5819
www.vishay.com Vishay General Semiconductor
Revision: 13-Aug-13 1Document Number: 88525
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Schottky Barrier Plastic Rectifier
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 20 V, 30 V, 40 V
IFSM 25 A
VF0.45 V, 0.55 V, 0.60 V
TJ max. 125 °C
Package DO-204AL
Diode variations Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5817 1N5818 1N5819 UNIT
Maximum repetitive peak reverse voltage VRRM 20 30 40 V
Maximum RMS voltage VRMS 14 21 28 V
Maximum DC blocking voltage VDC 20 30 40 V
Maximum non-repetitive peak reverse voltage VRSM 24 36 48 V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length at TL = 90 °C IF(AV) 1.0 A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load IFSM 25 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG - 65 to + 125 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5817 1N5818 1N5819 UNIT
Maximum instantaneous forward voltage 1.0 VF (1) 0.450 0.550 0.600 V
Maximum instantaneous forward voltage 3.1 VF (1) 0.750 0.875 0.900 V
Maximum average reverse current
at rated DC blocking voltage
TA = 25 °C IR (1) 1.0 mA
TA = 100 °C 10
Typical junction capacitance 4.0 V, 1.0 MHz CJ 125 110 pF