ADVANCFD POWFR TECHNOLOGY 4SE D @@ 0257909 0000484 702 MAVP ADVANCED D - . POWER (24-\s G TECHNOLOGY APT8075AN 800V 11.5A 0.75 s APT7575AN 750V 11.5A 0.75 Q M APT8090AN 800V 10.5A 0.900 POWER MOS IV' APT7590AN 750V 10.5A 0.90 Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Ty = 25C unless otherwise specified. APT Symbol | Parameter 7575AN | 8075AN | 7590AN | S090AN | UNIT Voss | Drain-Source Voltage 750 800 750 800 Volts |, | Continuous Drain Current ; 11.5 10.5 Amps lou | Pulsed Drain Current! 46 42 Amps Ves | Gate-Source Voltage +30 Volts Py Total Power Dissipation @ Ty = 25C, 230 Watts Derate Above 25C T yr sta Operating and Storage Junction Temperature Range - 55 to 150 C STATIC ELECTRICAL CHARACTERISTICS Symbol | Characteristic / Test Conditions / Part Number MIN TYP | MAX | UNIT BV Drain-Source Breakdown Voltage APT8075AN / APT8090AN 800 Volts PSS | (Vag = OV, Ip = 250 HA) APT7575AN / APT7590AN 750 Volts Zero Gate Voltage Drain Current (Vos = Voss: Ves = OV) 250 WA PSS Vos = 0-8 Vig Vag = OV, Ty = 125C) 1000 less Gate-Source Leakage Current (Veg = 230V, Vps = OV) +100 nA (ON) On State Drain Current ? APT8075AN / APT7575AN 11.5 Amps o (Vos > !p(ON) x Rag(ON) Max, Vag = 10V) | APTBO90AN / APT7590AN 10.5 Amps Vegg(TH)| Gate Threshold Voltage (Vos = Ves: |, = 1mA) 2 4 Volts R_ION Static Drain-Source On-State Resistance 2 | APT8075AN / APT7575AN 0.75 | Ohms ps(ON) (Vag = 10V, |, =0.5 I, [Cont.]) APT8090AN / APT7590AN 0.90 | Ohms THERMAL CHARACTERISTICS Symbol! Characteristic MIN | TYP | MAX | UNIT Rejo | Junction to Case 0.53 | C/W Roux | Junction to Ambient 30 | C/W T, | Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec. 300 C 405 S.W. COLUMBIA STREET PHONE ... (503) 382-8028 BEND, OREGON 97702-1035 U.S.A. FAX ..... (503) 388 -0364 72@ 0257909 oooo4as 649 MBAVP ADVANCED POWFR TECHNOLOGY 4YOE D DYNAMIC CHARACTERISTICS APT8075/7575/8090/7590AN Symbol | Characteristic Test Conditions MIN TYP | MAX | UNIT iss | Input Capacitance Veg = OV 2410 } 2950 pF oss | Output Capacitance Vig = 25V 370 520 pF C Reverse Transfer Capacitance f=1MHz 120 | 180 pF Q, | Total Gate Charge 88 130 nc Ves = 10V, Lb = Ib [Cont.] Q Gate-Source Charge Vv. =05V 8.9 13 nc bpp ~ *'Y pss Qoq Gate-Draln ("Miller") Charge 44 67 nc t,(on) | Turn-on Delay Time 13 27 ns Vi, =0.5V t Rise Time DD DSS 18 36 ns t I) = Ip [Cont], Vag = 15V t,(off) | Turn-off Delay Time R.=18 62 94 ns gl. t; | Fall Time 24 48 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS 7-37-15 Symbol | Characteristic / Test Conditions / Part Number MIN TYP | MAX | UNIT APT8075AN / APT7575AN 11.5 | Amps I, Continuous Source Current (Body Diode) APT8090AN / APT7590AN 10.5 | Amps 1 ; APT8075AN / APT7575AN 46 Amps Igy | Pulsed Source Current (Body Diode) APTS8090AN / APT7590AN 42 Amps Vgp __| Diode Forward Voltage (V,, = OV, I, = -l, [Cont.]) 1.3. | Volts tr Reverse Recovery Time (I, = ly [Cont.], di./dt = 100A/ys) 328 656 1300 ns rr | Reverse Recovery Charge 3.1 6.2 12 pC SAFE OPERATING AREA CHARACTERISTICS Symbol | Characteristic Test Conditions / Part Number MIN TYP | MAX | UNIT SOA1 Safe Operating Area Vos =0.4 Voss lps = Py 10.4 Voss! t= 1 Sec. 230 Watts SOA2 | Safe Operating Area ps = !p [Cont.], Vug = Pp / I, [Cont], t= 1 Sec} 239 Watts APT8075AN / APT7575AN 4 A lM Inductive Current Clamped fA 6 a APT8090AN / APT7590AN 42 Amps 1.) Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 1.0 0.5 a 0.05 0.01 Ze@jc. THERMAL IMPEDANCE (C/W) 2 8 oO 0.001 10 2.) Pulse Test: Pulse width < 380 pS DUTY FACTOR D =t;/to PEAK Ty=PpomxZ@uc + To 103 102 10! 1.0 CTANGULAR PULSE DURATION (SECOND 104 Duty Cycle < 2% 3.) See MIL-STD-750 Method 3471 10 REC FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION *TO-CASE vs PULSE DURATION 7316 Vv &10V a uw x 12 a = =< kK G8 a a > 5 z = 4 5 a av 0 50 100 150 200 250 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 20 Ty= T= 425C i x 16 [-[Vpg> 1 (0N) x Figg (ON)MAX, Ww 290u SEC. PULSE TEST Ty = #125C z L 12 Zz pr fra rea 3 8 z z a 4 J =+1 T Jz I -55C. %% 2 4 6 8 Vas. GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 12 2 40 ira ui a 3 8 be Zz ed 6 ir => o z 4 e a 5 2 0 25 150 50 75 100 125 To, CASE TEMPERATURE (C) Cc FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 ly = 5 ty [Cont] Veg = 10 2.0 1.5 1.0 0.5 0.0.5 - Ros(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 25 0 25 50 75 100 125 1 Ty, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE BVpss, DRAIN-TO-SOURCE BREAKDOWN Ros(ON), DRAIN-TO-SOURCE ON RESISTANCE 1p, DRAIN CURRENT (AMPERES) VOLTAGE (NORMALIZED) (NORMALIZED) Ve@s(TH), THRESHOLD VOLTAGE (VOLTS) (NORMALIZED) ADVANCED POWER TECHNOLOGY 49E D MM G257909 OO0048L S85 MBAVP. 7 39-1S 16 V, dl 6V 12 8 4 4V 0 0 2 4 6 8 10 12 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 25 Ty = 250 2p SEC. PULSE TEST NORMAUZED TO 2.0 Veg = 1OV @ 0.5 I Cont} Vest ov 1.5 1.0 05 0.0 10 20 30 Ip, DRAIN CURRENT (AMPERES) FIGURE 5, Rps{ON) vs DRAIN CURRENT 1.2 11 1.0 0.9 oy 0 7 50 - 100125 150 y: TURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 1.2 1.0 0.8 0.6 0455 -25 0 25 50 75 100 125 150 To, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATUREADVANCED POWER TECHNOLOGY 4OE D mm 0257909 OO0O48? 41 MEAVP 60 tous 10,000 SS0AN . T- 39S a UMITEO BY 1 Oops x Lc a 10 & 2 imS 3 1,000 - 3 e 2 s 10mS & 9 1 oO 100 = Oo c & wBOC 100mS 3 SINGLE PULSE oC APT8075/8090AN 4 5 10 50 100 500 1000 109 10 20 30 40 50 Vg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 qe 100 a = 1, (Cont} a Ving=80V oe 3 | bu 50 = 16 = rm Vps=1 <= 9 Vnq=400V b = DS S 20 12 - 8 e Ty=41 T = 425C Wy Oo 10 ac = 56|COS = b o6|(CS o w yg c Lut Ee HO 6 a o . S 0 c > 40 80 120 160 200 & 0 05 1.0 1.5 2.0 Qg, TOTAL GATE CHARGE (nC) Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-3 Package Outline (TO-204AA) 3.84 (451) 4.09 {.161) ; : (2-Piaces) Seating Gate Plane ertre. 25%. [ sos\ 16.64 (.655) 38.61 (1.52) Source (7, s\ 17.15. (675) | 39.12 (1.54) y Drain ' an 22.23 (.875) Max. (Case) \ \ | ~ : t R WS Ny 29.90 (1.177) * 40 (1.1 0.97 (.038) Ca eee (1-197) 1,10 04s) <lEr-r | (2-Places @ _l 1.52 (.060) 5.21 (208 < 3.43 (135) rs 5.72 (225 . 6.35 (.250) | yl 7.92 (.312) > 10.67 (.420) 9.15 (.360) "12.70 (500) iad 11.18 (.440) | 25.15 (0.990) 26.67 (1.050) Dimensions in Millimeters and (Inches) 0-8001 ev- 75