VRSM VRRM (dv/dt)cr ITRMS (maximum values for continuous operation) VDRM 2300 A SKT 1000 SKT 1200 ITAV (sin. 180; Tcase = . . .; DSC) V V V/s 1465 A (58 C) 1780 A (55 C) 500 400 500 SKT 1000/04 D SKT 1200/04 D 900 1300 800 1200 500 1000 SKT 1000/08 D SKT 1000/12 E - SKT 1200/12 E 1500 1700 1400 1600 1000 1000 SKT 1000/14 E SKT 1000/16 E SKT 1200/14 E SKT 1200/16 E 1900 2300 1800 2200 1000 1000 SKT 1000/18 E SKT 1000/22 E L2 SKT 1200/18 E - 2700 2900 2600 2800 1000 1000 SKT 1000/26 E L2 SKT 1000/28 E L2 - - Symbol Conditions ITAV sin. 180; Tcase = 85 C; DSC ITSM Tvj = 25 C; 10 ms Tvj = 125 C; 10 ms Tvj = 25 C; 8,3 ... 10 ms Tvj = 125 C; 8,3 ... 10 ms i 2t SKT 1000 SKT 1200 Units 1000 1200 A 19 000 16 500 1 800 1 360 30 000 25 500 4 500 3 250 A A kA2s kA2s tgd Tvj = 25 C tgr VD = 0,67 . VDRM (di/dt)cr IH IL tq f = 50 ... 60 Hz Tvj = 25 C; typ./max. Tvj = 25 C; RG = 33 ; typ./max. Tvj = 125 C; typ. VT VT(TO) rT Tvj = 25 C; IT = 3600 A; max. Tvj = 125 C Tvj = 125 C IDD; IRD Tvj = 125 C; VRD = VRRM VDD = VDRM 100 mA VGT IGT VGD IGD Tvj = 25 C Tvj = 25 C Tvj = 125 C Tvj = 125 C 5 250 0,25 10 V mA V mA Rthjc cont.; sin. 180; DSC/SSC rec. 120; DSC/SSC DSC/SSC 0,021 0,0225 / 0,054 0,027 / 0,060 0,005 / 0,010 - 40 ... + 125 - 40 ... + 130 C/W C/W C/W C/W C C SI units US units 22 ... 25 5000 ... 5600 550 kN lbs. g Rthch Tvj Tstg F w Case (c) by SEMIKRON Thyristors 2800 A IG = 1 A diG/dt = 1 A/s typ. 1 typ. 2 s s 125 250 / 500 0,5 / 2 100 ... 250 A/s mA A s 2,0 1,14 0,243 1,65 0,95 0,18 V V m Features * Hermetic metal cases with ceramic insulators * Capsule packages for double sided cooling * International standard cases * Off-state and reverse voltages up to 2800 V * Amplifying gate Typical Applications * DC motor control (e. g. for machine tools) * Controlled rectifiers (e. g. for battery charging) * AC controllers (e. g. for temperature control) B 14 0898 B 3 - 49 B 3 - 50 (c) by SEMIKRON (c) by SEMIKRON B 3 - 51 Fig. 6 b On-state characteristics Fig. 7 a Power dissipation vs. on-state current Fig. 7 b Power dissipation vs. on-state current Fig. 8 Surge overload current vs. time Fig. 9 Gate trigger characteristics B 3 - 52 (c) by SEMIKRON (c) by SEMIKRON B 3 - 53