2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD2122(L)/(S) 2SD2123(L)/(S) Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 5 5 V Collector current IC 1.5 1.5 A Collector peak current IC(peak) 3 3 A 18 18 W 1 Collector power dissipation PC* Junction temperature Tj 150 150 C Storage temperature Tstg -55 to +150 -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) 2SD2122(L)/(S) 2SD2123(L)/(S) Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 180 -- -- 180 -- -- V IC = 1 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 120 -- -- 160 -- -- V IC = 10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 5 -- -- 5 -- -- V IE = 1 mA, IC = 0 -- -- 10 -- -- 10 A VCB = 160 V, IE = 0 60 -- 200 60 -- 200 A VCE = 5 V, IC = 150 mA* 1 hFE2 30 -- -- 30 -- -- VCE = 5 V, IC = 500 mA* 1 VCE(sat) -- -- 1 -- -- 1 V IC = 500 mA, 1 IB = 50 mA* Base to emitter voltage VBE -- -- 1.5 -- -- 1.5 V VCE = 5 V, IC = 150 mA* 1 Gain bandwidth product fT -- 180 -- -- 180 -- MHz VCE = 5 V, IC = 150 mA* 1 Collector output capacitance -- 14 -- -- 14 -- pF VCB = 10 V, IE = 0, f = 1 MHz Collector cutoff current ICBO DC current transfer ratio Collector to emitter saturation voltage hFE1* Cob 2 Notes: 1. Pulse test 2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by hFE1 as follows. B C 60 to 120 100 to 200 2 2SD2122(L)/(S), 2SD2123(L)/(S) Maximum Collector Dissipation Curve Collector power dissipation Pc (W) 30 20 10 0 50 100 Case temperature TC (C) 150 Area of Safe Operation 10 Collector current IC (A) 3.0 IC (max) 1.0 0.3 on ati er ) Op 25C DC = (T C 2SD2123 0.1 0.03 2SD2122 0.01 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics Collector current IC (A) 1.0 10 98 7 6 0.8 5 P C 4 0.6 = 18 W 3 0.4 2 0.2 1 mA IB = 0 0 TC = 25C 10 20 30 40 50 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 1,000 VCE = 5 V Ta = 25C 300 100 30 10 0.03 0.1 0.3 1.0 Collector current IC (A) 3.0 3 Collector to emitter saturation voltage VCE (sat) (V) 2SD2122(L)/(S), 2SD2123(L)/(S) Saturation Voltage vs. Collector Current 1.0 0.3 0.1 0.03 Ta = 25C lC = 10 lB 0.01 0.03 0.1 0.3 1.0 Collector current IC (A) 3.0 Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 10 3.0 1.0 0.3 0.1 0.03 Ta = 25C lC = 10 lB 0.1 0.3 1.0 Collector current IC (A) 3.0 Typical Transfer Characteristics Collector current IC (A) 2.0 1.6 1.2 0.8 0.4 VCE = 5 V Ta = 25C 0 4 0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V) 2.0 2SD2122(L)/(S), 2SD2123(L)/(S) Gain Bandwidth Product vs. Collector Current Gain bandwidth product fT (MHz) 1,000 300 100 30 VCE = 5 V Ta = 25C 10 0.01 0.03 0.1 0.3 Collector current IC (A) 1.0 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 100 30 10 3 f = 1 MHz IE = 0 Ta = 25C 1 1 3 10 30 100 Collector to base voltage VCB (V) 5 2SD2122(L)/(S), 2SD2123(L)/(S) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 6 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071