BUZ11 Data Sheet [ /Title (BUZ1 1) /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. * rDS(ON) = 0.040 File Number 2253.2 * 30A, 50V * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Formerly developmental type TA9771. * Majority Carrier Device Ordering Information PART NUMBER BUZ11 PACKAGE TO-220AB * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" BRAND BUZ11 NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) (c)2001 Fairchild Semiconductor Corporation BUZ1 Rev. A BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID BUZ11 50 50 30 UNITS V V A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG 120 20 75 0.6 -55 to 150 A V W W/oC oC DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg E 55/150/56 oC oC 300 260 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V IDSS TJ = 25oC, VDS = 50V, VGS = 0V - 20 250 A TJ = 125oC, VDS = 50V, VGS = 0V - 100 1000 A VGS = 20V, VDS = 0V - 10 100 nA Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time IGSS rDS(ON) ID = 15A, VGS = 10V (Figure 8) - 0.03 0.04 gfs VDS = 25V, ID = 15A (Figure 11) 4 8 - S VCC = 30V, ID 3A, VGS = 10V, RGS = 50, RL = 10 - 30 45 ns - 70 110 ns td(OFF) - 180 230 ns tf - 130 170 ns - 1500 2000 pF pF td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) Output Capacitance COSS - 750 1100 Reverse Transfer Capacitance CRSS - 250 400 pF Thermal Resistance Junction to Case RJC 1.67 oC/W Thermal Resistance Junction to Ambient RJA 75 oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current SYMBOL ISD Pulsed Source to Drain Current ISDM Source to Drain Diode Voltage VSD Reverse Recovery Time Reverse Recovery Charge trr QRR TEST CONDITIONS TC = 25oC TC = 25oC TJ = 25oC, ISD = 60A, VGS = 0V TJ = 25oC, ISD = 30A, dISD/dt = 100A/s, VR = 30V MIN TYP MAX UNITS - - 30 A - - 120 A - 1.7 2.6 V - 200 - ns - 0.25 - C NOTES: 2. Pulse Test: Pulse width 300ms, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). (c)2001 Fairchild Semiconductor Corporation BUZ1 Rev. A BUZ11 Typical Performance Curves Unless Otherwise Specified 40 POWER DISSIPATION MULTIPLIER 1.2 VGS > 10V ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 30 20 10 0.2 0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 ZJC, TRANSIENT THERMAL IMPEDANCE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 1 0 150 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 60 PD = 75W OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 2.5s 102 10s 100s 101 1ms TC = 25oC TJ = MAX RATED SINGLE PULSE 100 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 10V 40 VGS = 8.0V VGS = 7.5V VGS = 7.0V VGS = 6.5V 30 20 VGS = 6.0V VGS = 5.5V VGS = 5.0V VGS = 4.5V VGS = 4.0V 10 10ms 100ms DC FIGURE 4. FORWARD BIAS SAFE OPERATING AREA (c)2001 Fairchild Semiconductor Corporation VGS = 20V 50 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 103 102 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 FIGURE 5. OUTPUT CHARACTERISTICS BUZ1 Rev. A BUZ11 20 Unless Otherwise Specified (Continued) 0.15 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 25V 15 10 5 0 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 7 0.06 0.04 0.02 50 100 0 150 VDS = VGS ID = 1mA 3 2 1 0 -50 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) 10 CISS COSS CRSS 10-1 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE (c)2001 Fairchild Semiconductor Corporation 60 0 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 0 20 40 ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 10-2 0 4 TJ, JUNCTION TEMPERATURE (oC) 100 10V 20V VGS(TH), GATE THRESHOLD VOLTAGE (V) rDS(ON), DRAIN TO SOURCE ON RESISTANCE () PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 15A, VGS = 10V 0 0.05 FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 0.08 -50 5.5V 6V 6.5V 7V 7.5V 8V 9V 0.10 8 FIGURE 6. TRANSFER CHARACTERISTICS 0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5V rDS(ON), ON-STATE RESISTANCE () IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 25V 8 TJ = 25oC 6 4 2 0 0 5 10 ID, DRAIN CURRENT (A) 15 20 FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT BUZ1 Rev. A BUZ11 Typical Performance Curves 15 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TJ = 25oC 102 TJ = 150oC 101 100 10-1 0 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) ID = 45A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) 103 Unless Otherwise Specified (Continued) VDS = 10V 10 VDS = 40V 5 0 3.0 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tr VDS RL tf 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2F 50% PULSE WIDTH 10% FIGURE 14. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd 0.3F VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 16. GATE CHARGE TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation Ig(REF) 0 FIGURE 17. GATE CHARGE WAVEFORMS BUZ1 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H