TIP112 - Power Innovations

TIP110, TIP111, TIP112

NPN SILICON POWER DARLINGTONS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

●Designed for Complementary Use with

TIP115, TIP116 and TIP117

●50 W at 25°C Case Temperature

●4 A Continuous Collector Current

●Minimum hFE of 500 at 4 V, 2 A

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base. MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,

VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.

RATINGSYMBOLVALUEUNIT

Collector-base voltage (IE = 0)TIP110

TIP111

TIP112VCBO

100V

Collector-emitter voltage (IB = 0)TIP110

TIP111

TIP112VCEO

100V

Emitter-base voltageVEBO5V

Continuous collector current IC4A

Peak collector current (see Note 1)ICM6A

Continuous base current IB50mA

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot50W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot2W

Unclamped inductive load energy (see Note 4)½LIC225mJ

Operating junction temperature rangeTj-65 to +150°C

Storage temperature rangeTstg-65 to +150°C

Lead temperature 3.2 mm from case for 10 secondsTL260°C

TIP110, TIP111, TIP112

NPN SILICON POWER DARLINGTONS

DECEMBER 1971 - REVISED MARCH 1997

PRODUCT INFORMATION

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETERTEST CONDITIONSMINTYPMAXUNIT

V(BR)CEOCollector-emitter

breakdown voltageIC = 30 mA

(see Note 5)IB = 0TIP110

TIP111

TIP112

100V

ICEOCollector-emitter

cut-off current

VCE= 30 V

VCE= 40 V

VCE= 50 V

IB=0

TIP110

TIP111

TIP112

2mA

ICBOCollector cut-off

current

VCB= 60 V

VCB= 80 V

VCB= 100 V

IE=0

TIP110

TIP111

TIP112

1mA

IEBOEmitter cut-off

currentVEB = 5 VIC=0 2 mA

hFEForward current

transfer ratioVCE = 4 V

VCE = 4 VIC= 1A

IC=2A(see Notes 5 and 6)1000

500

VCE(sat)Collector-emitter

saturation voltageIB = 8 mAIC=2A(see Notes 5 and 6)2.5V

VBEBase-emitter

voltageVCE = 4 VIC=2 A(see Notes 5 and 6)2.8V

VECParallel diode

forward voltageIE = 4 AIB=0(see Notes 5 and 6)3.5V

resistive-load-switching characteristics at 25°C case temperature

PARAMETERTEST CONDITIONS †MINTYPMAXUNIT

ton Turn-on timeIC = 2 A

VBE(off) = -5 VIB(on) = 8 mA

RL = 15 ΩIB(off) = -8 mA

tp = 20 µs, dc ≤ 2%2.6µs

toffTurn-off time4.5µs

DECEMBER 1971 - REVISED MARCH 1997

TIP110, TIP111, TIP112

NPN SILICON POWER DARLINGTONS

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

Figure 1. Figure 2.

Figure 3.

TYPICAL DC CURRENT GAIN

COLLECTOR CURRENT

IC - Collector Current - A

0·5 5·01·0

hFE - Typical DC Current Gain

20000

100

1000

10000

TCS110AA

VCE = 4 V

tp = 300 µs, duty cycle < 2%

TC = -40°C

TC = 25°C

TC = 100°C

COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

IC - Collector Current - A

0·5 5·01·0

VCE(sat) - Collector-Emitter Saturation Voltage - V

0·5

1·0

1·5

2·0 TCS110AB

TC = -40°C

TC = 25°C

TC = 100°C

tp = 300 µs, duty cycle < 2%

IB = IC / 100

BASE-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

IC - Collector Current - A

0·5 5·01·0

VBE(sat) - Base-Emitter Saturation Voltage - V

0·5

1·0

1·5

2·0

2·5

3·0 TCS110AC

TC = -40°C

TC = 25°C

TC = 100°C

IB = IC / 100

tp = 300 µs, duty cycle < 2%

TIP110, TIP111, TIP112

NPN SILICON POWER DARLINGTONS

DECEMBER 1971 - REVISED MARCH 1997

PRODUCT INFORMATION

MAXIMUM SAFE OPERATING REGIONS

Figure 4.

THERMAL INFORMATION

Figure 5.

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

VCE - Collector-Emitter Voltage - V

1·0 10 100 1000

IC - Collector Current - A

0.01

0·1

1·0

10 SAS110AA

TIP110

TIP111

TIP112

MAXIMUM POWER DISSIPATION

CASE TEMPERATURE

TC - Case Temperature - °C

025 50 75 100 125 150

Ptot - Maximum Power Dissipation - W

60 TIS110AA

TIP110, TIP111, TIP112

NPN SILICON POWER DARLINGTONS

DECEMBER 1971 - REVISED MARCH 1997

PRODUCT INFORMATION

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

MECHANICAL DATA

TO220

ALL LINEAR DIMENSIONS IN MILLIMETERS

ø1,23

1,32

4,20

4,70

1 2 3

0,97

0,61

see Note C

see Note B

10,0

10,4

2,54

2,95

6,0

6,6

14,55

15,90

12,7

14,1

3,5

6,1

1,07

1,70

2,34

2,74

4,88

5,28

3,71

3,96

0,41

0,64

2,40

2,90

VERSION 2 VERSION 1

NOTES: A. The centre pin is in electrical contact with the mounting tab.

B. Mounting tab corner profile according to package version.

C. Typical fixing hole centre stand off height according to package version.

Version 1, 18.0 mm. Version 2, 17.6 mm.

MDXXBE

TIP110, TIP111, TIP112

NPN SILICON POWER DARLINGTONS

DECEMBER 1971 - REVISED MARCH 1997

PRODUCT INFORMATION

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,

machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.