DHG 50 X 1200 NA preliminary V RRM = 1200 V I FAV = 2x 25 A t rr = 200 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 50 X 1200 NA Backside: Isolated Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: SOT-227B (minibloc) rIndustry standard outline rCu base plate internal DCB isolated rIsolation Voltage 3000 V rEpoxy meets UL 94V-0 rRoHS compliant Conditions Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved max. Unit V VR = 1200 V 30 A VR = 1200 V TVJ = 125 C 0.5 mA IF = 25 A TVJ = 25 C 2.11 V IF = 50 A 2.74 V IF = 25 A IF = 50 A rectangular TVJ = 125 C d = 0.5 2.09 V 2.88 V TC = 65C 25 A TVJ = 150C 1.23 V 30 m 1.20 K/W 150 C TC = 25 C 100 W TVJ = 45C 200 A -40 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 1200 for power loss calculation only R thJC t rr min. TVJ = 25 C TVJ = 25 C 30 A; VR = 600 V -di F /dt = 600 A/s VR = 600 V; f = 1 MHz TVJ = 25 C 23 A TVJ = 125C 30 A TVJ = 25 C 200 ns TVJ = 125C 350 ns TVJ = 25 C 11 pF Data according to IEC 60747and per diode unless otherwise specified 20110526b DHG 50 X 1200 NA preliminary Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 100 0.10 -40 Weight A K/W 150 30 C g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm VISOL isolation voltage t = 1 second 3000 t = 1 minute d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside V 2500 V 10.5 3.2 mm 8.6 6.8 mm Part number D H G 50 X 1200 NA Product Marking abcde Logo YYWW Z Part No. = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Parallel legs Reverse Voltage [V] SOT-227B (minibloc) XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Name DHG 50 X 1200 NA IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Marking on Product DHG50X1200NA Delivering Mode Tube Base Qty Code Key 10 507766 Data according to IEC 60747and per diode unless otherwise specified 20110526b DHG 50 X 1200 NA preliminary Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110526b DHG 50 X 1200 NA preliminary 60 7 50 6 40 5 TVJ = 125C IF VR = 600 V 60 A Qrr 30 4 [A] 30 A [C] 20 3 TVJ = 125C 15 A TVJ = 25C 10 0 0.0 0.5 1.0 2 1.5 2.0 2.5 1 300 3.0 400 500 VF [V] 700 800 900 1000 1100 diF /dt [A/s] Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt 70 700 TVJ = 125C 60 60 A VR = 600 V 500 30 A trr 40 TVJ = 125C 600 VR = 600 V 50 IRR 600 400 15 A [A] 30 [ns] 300 20 200 10 100 0 300 400 500 600 700 800 60 A 30 A 15 A 0 300 900 1000 1100 400 500 diF /dt [A/s] 600 700 800 900 1000 1100 diF /dt [A/s] Fig. 3 Typ. peak reverse current IRM vs. di/dt Fig.4 Typ. recovery time trr versus di/dt 2 2.0 TVJ = 125C VR = 600 V 1.6 1 60 A 30 A Erec 1.2 [mJ] ZthJC 0.8 15 A [K/W] i 1 2 3 4 0.4 0.0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/s] Fig. 5 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 0.1 0.001 0.01 0.1 Ri 0.3413 0.2171 0.3475 0.2941 i 0.0025 0.03 0.03 0.08 1 10 tp [s] Fig. 6 Typ. transient thermal impedance Data according to IEC 60747and per diode unless otherwise specified 20110526b