Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 400 − − V
VCEX(sus) IC = 8A, Vclamp = 450V, TC = +100C 450 − − V
IC = 15A, Vclamp = 300V, TC = +100C 300 − − V
Collector Cutoff Current ICEV VCEV = 850V, VBE(off) = 1.5V − − 1.0 mA
VCEV = 850V, VBE(off) = 1.5V,
TC = +100C
− − 4.0 mA
ICER VCE = 850V, RBE = 50, TC = +100C− − 5.0 mA
Emitter Cutoff Current IEBO VEB = 9V, IC = 0 − − 1.0 mA
Second Breakdown
Second Breakdown Collector
Current with Base Forward Bias
IS/b VCE = 100V, t = 1.0s (non−repetitive) 0.2 − − A
ON Characteristics (Note 2)
DC Current Gain hFE VCE = 2V, IC = 5A 12 −60
VCE = 2V, IC = 10A 6−30
Collector−Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 2A − − 1.5 V
IC = 10A, IB = 2A, TC = +100C− − 2.5 V
IC = 15A, IB = 3A − − 5.0 V
Base−Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 2A − − 1.6 V
IC = 10A, IB = 2A, TC = +100C− − 1.6 V
Dynamic Characteristics
Current Gain−Bandwidth Product fTVCE = 10V, IC = 500mA, f = 1MHz 6−28 MHz
Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz 125 −500 pF
Switching Characteristics (Resistive Load)
Delay Time tdVCC = 250V, IC = 10A, IB1 = IB2 =2A,
tp = 300s, Duty Cycle 2%
− − 0.05 s
Rise Time tr− − 1.0 s
Storage Time ts− − 4.0 s
Fall Time tf− − 0.7 s
Switching Characteristics (Inductive Load, Clamped)
Storage Time tsv IC = 10A peak, Vclamp = 450V, IB1 = 2A,
VBE(off) = 5V
−2.0 −s
Fall Time tfi 0.09 − − s
Storage Time tsv IC = 10A peak, Vclamp = 450V, IB1 = 2A,
VBE(off) = 5V, TJ = +100C
− − 5.0 s
Fall Time tfi − − 1.5 s
Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%.