© 2012 IXYS All rights reserved 1 - 3
20120131b
IXA 40PG1200DHGLB
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
IC25 = 63 A
VCES = 1200 V
VCE(sat) typ = 1.85 V
XPT IGBT phaseleg
ISOPLUS™
Surface Mount Power Device
Features
• XPT IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• SonicTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• VCEsat detection diode
- integrated into package
- very fast diode
• Package
- isolated back surface
- low coupling capacity between pins
and heatsink
- PCB space saving
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
Applications
• Phaseleg
- buck-boost chopper
• Full bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• Three phase bridge
- AC drives
- controlled rectifier
IGBTs S1, S2
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1200 V
VGES ±20 V
IC25
IC80
TC = 25°C
TC = 80°C
63
45
A
A
ICM
VCEK
VGE = 15 V; RG = 27 W; TVJ = 125°C
RBSOA, clamped inductive load; L = 100 µH
105
VCES
A
tSC
(SCSOA)
VCE = 900 V; VGE = ±15 V; RG = 27 W; TVJ = 125°C
none repetitive
10 µs
Ptot TVJ = 25°C 230 W
Symbol Conditions Characteristic
Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 35 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
1.85
2.2
2.15 V
V
VGE(th) IC = 1.5 mA; VGE = VCE 5.4 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C 0.25
0.15 mA
mA
IGES VCE = 0 V ; VGE = ± 20 V 200 nA
td(on)
tr
td(off)
tf
Eon
Eoff
Inductive load; TVJ = 125°C
VCE = 600 V; IC = 35 A
VGE = ±15 V; RG = 27 W
70
40
250
100
3.8
4.1
ns
ns
ns
ns
mJ
mJ
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 35 A
tbd
107
pF
nC
RthJC
RthJH with heatsink compound (IXYS test setup) 0.75
0.55
0.95
K/W
K/W
6
1
3
4
2
7
8
5
9
D3
D4
D1
D2
S1
S2
E72873
8
6 5 4
79
3 2 1
Isolated surface
to heatsink
© 2012 IXYS All rights reserved 2 - 3
20120131b
IXA 40PG1200DHGLB
IXYS reserves the right to change limits, test conditions and dimensions.
Ordering Ordering Name Marking on Product Delivering
Mode
Base
Qty
Ordering
Code
Standard IXA 40PG1200DHGLB IXA40PG1200DHGLB Tape&Reel 200 tbd
Advanced Technical Information
Equivalent Circuits for Simulation
Conduction
IGBTs (typ. at VGE = 15 V; TJ = 125°C)
S1, S2 V0 = 1.1 V; R0 = 40 mW
Diodes (typ. at TJ = 125°C)
D1, D2 V0 = 1.3 V; R0 = 28 mW
Component
Symbol Conditions Maximum Ratings
TVJ
Tstg
-55...+150
-55...+125
°C
°C
VISOL IISOL < 1 mA; 50/60 Hz 2500 V~
FCmounting force 40 ... 130 N
Symbol Conditions Characteristic Values
min. typ. max.
CPcoupling capacity between shorted
pins and backside metal
90 pF
dS, dA
dS, dA
pin - pin
pin - backside metal
1.65
4
mm
mm
CTI 400
Weight 8 g
I
V
0
R
0
Diodes D1, D2
Symbol Conditions Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
40
27
A
A
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VFIF = 35 A TVJ = 25°C
TVJ = 125°C
2.1
2.1
2.4 V
V
IRM
trr
Erec
IF = 35 A; RG = 27 W; TVJ = 125°C
VR = 600 V; VGE = -15 V
30
350
tbd
A
ns
mJ
RthJC
RthJH
per diode
with heatsink compound (IXYS test
setup)
1.2
0.9
1.5
K/W
K/W
Diodes D3, D4
Symbol Conditions Maximum Ratings
VRTC = 25°C to 150°C 1200 V
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VFIF = 1 A TVJ = 25°C
TVJ = 125°C
1.7
1.5
2.2 V
V
IRVR = 1200 V TVJ = 25°C
TVJ = 125°C 30
2 µA
µA
IRM
trr
IF = 1 A; diF /dt = -100 A/µs; TVJ = 25°C
VR = 100 V; VGE = 0 V
2.3
40
A
ns
© 2012 IXYS All rights reserved 3 - 3
20120131b
IXA 40PG1200DHGLB
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Dimensions in mm (1 mm = 0.0394“)
Notes:
1) potrusion may add 0.2 mm max. on each side
2) additional max. 0.05 mm per side by punching misalignement
or overlap of dam bar or bending compression
3) DCB area 10 to 50 µm convex;
position of DCB area in relation to plastic rim: ±25 µm
(measured 2 mm from Cu rim)
4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.)
cutting edges may be partially free of plating
(6x) 1 ±0,05 2)
5,5 ±0,1
0,5 ±0,1
25 ±0,2 1)
18 ±0,1
9±0,1 (3x) 2 ±0,05 2)
23 ±0,2
32,7 ±0,5
2,75 ±0,1
5,5 ±0,1
13,5 ±0,1
16,25 ±0,1
19 ±0,1
A
4±0,05
0,55
±0,1
2±0,2
4,85 ±0,2
3)
0,05
A (8 : 1)
0+0,15
2°
0,1
seating plane
