2SD882SS
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R206-018,B
ABSOLUTE MAXIMUM RATING
(Ta=25℃, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CEO
30 V
Emitter-Base Voltage V
EBO
5 V
DC I
C
3 A
Collector Current Pulse I
CP
7 A
Base Current I
B
0.6 A
Ta=25℃ 1 W
Collector Dissipation T
C
=25℃ P
C
10 W
Junction Temperature T
J
+150 ℃
Storage Temperature T
STG
-55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BV
CBO
I
C
=100µA, I
E
=0 40 V
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=1mA, I
B
=0 30 V
Emitter-Base Breakdown Voltage BV
EBO
I
E
=100µA, I
C
=0 5 V
Collector Cut-off Current I
CBO
V
CB
=30V, I
E
=0 1000 nA
Emitter Cut-off Current I
EBO
V
EB
=3V, I
C
=0 1000 nA
h
FE1
V
CE
=2V, I
C
=20mA 30 200
DC Current Gain (Note 1) h
FE2
V
CE
=2V, I
C
=1A 100 150 400
Collector-Emitter Saturation Voltage V
CE(SAT)
I
C
=2A, I
B
=0.2A 0.3 0.5 V
Base-Emitter Saturation Voltage V
BE(SAT)
I
C
=2A, I
B
=0.2A 1.0 2.0 V
Current Gain Bandwidth Product f
T
V
CE
=5V, I
C
=0.1A 80 MHz
Output Capacitance Cob V
CB
=10V, I
E
=0, f=1MHz 45 pF
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
CLASSIFICATION OF h
FE2
RANK Q P E
RANGE 100-200 160-320 200-400