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Recommended Reprogramming Procedure for
Atmel’s Flash Memories
The AT49X001(N)(T), AT49X002(N)(T),
AT49X2048A(T), AT49X4096A(T),
AT49X8192A(T) (the X designation
could refer to BV, LV, or F) are sectored
Flash memory devices. The memory
array of each device is divided into multi-
ple sectors, which can be used to store
program code or data. The
AT49X001(N)(T) and the
AT49X002(N)(T) devices are byte-wide
memories that consist of two parameter
blocks, two main memory blocks, and a
boot block. The AT49X2048A(T),
AT49X4096A(T), and AT49X8192A(T)
are byte or word selectable through the
BYTE pin. All three of these memories
consist of two parameter blocks, one
boot block and one main memory block.
All five of these memories can be repro-
grammed by first performing a chip
erase and then programming the mem-
ory byte by byte or word by word. This is
the recommend method of reprogram-
ming the whole device. A sector erase
command is also available on all of
these devices. The sector erase com-
mand only erases a particular region in
the memory. After the region is erased, it
can be programmed with new data.
There are, however, certain restrictions
that must be obeyed when using sector
erases. The restrictions for the
AT49X001(N)(T) and the
AT49X002(N)(T) are slightly different
than the restrictions for the
AT49X2048A(T), AT49X4096A(T), and
the AT49X8192A(T). If the restrictions
are not adhered to, incorrect data could
be stored and later read from the device.
For the AT49X002 (N)(T) and the
AT49X001(N)(T), the two main memory
sectors are designed such that sector
erases of one main memory block must
alternate with sector erases of the other
main memory block. Repeated attempts
to erase and reprogram either Main
Memory Block 1 or Main Memory Block
2 may disturb the data in other memory
blocks. By alternating updates between
Main Memory Blocks 1 and 2, the mem-
ory contents will not be disturbed. It is
critical that whenever a main memory
block is erased and reprogrammed the
other main memory block should be
erased and reprogrammed prior to any
subsequent erase of the first block. Fail-
ure to perform the above mentioned
procedure could result in incorrect data
being read from the device. Each param-
eter block can be updated
independently; erases to the parameter
blocks do not need to be alternated with
any other erases. Please note that there
is no mechanism to erase just the boot
block in these devices.
For the AT49X2048A, AT49X4096A,
and the AT49X8192A, the parameter
blocks are designed such that sector
erases of one parameter block must
alternate with sector erases of the other
parameter block. Repeated attempts to
erase and reprogram Parameter Block 1
or Parameter Block 2 may disturb the
data in the other parameter block. By
alternating updates between Parameter
Blocks 1 and 2, the memory contents will
not be disturbed. It is critical that when-
ever a parameter block is erased and
reprogrammed the other parameter
block should be erased and repro-
grammed prior to any subsequent erase
of the first parameter block. The main
memory region does not need to be
reprogrammed even if the parameter
Recommended
Reprogramming
Procedure for
Atmel’s Flash
Memories
Application
Note
Rev. 1913A–05/00