PZTA 42, PZTA 43
Oct-14-19991
NPN Silicon High-Voltage Transistors
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types; PZTA 92, PZTA 93 (PNP)
VPS05163
1
2
3
4
Type Marking Pin Configuration Package
PZTA 42
PZTA 43
PZTA 42
PZTA 43
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
4 = C
4 = C
SOT-223
SOT-223
Maximum Ratings
Parameter Symbol PZTA 42 PZTA 43 Unit
Collector-emitter voltage VCEO 300 200 V
Collector-base voltage VCBO 300 200
Emitter-base voltage VEBO 6 6
DC collector current IC500 mA
Base current IB100
Total power dissipation, TS = 124 °C Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction ambient 1) RthJA ≤72 K/W
Junction - soldering point RthJS ≤17
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
PZTA 42, PZTA 43
Oct-14-19992
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
PZTA 42
PZTA 43
V(BR)CEO
300
200
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IB = 0
PZTA 42
PZTA 43
V(BR)CBO
300
200
-
-
-
-
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
V(BR)EBO 6 - -
Collector cutoff current
VCB = 200 V, IE = 0
VCB = 160 V, IE = 0
PZTA 42
PZTA 43
ICBO
-
-
-
-
100
100
nA
Collector cutoff current
VCB = 200 V, IE = 0 , TA = 150 °C
VCB = 160 V, IE = 0 , TA = 150 °C
PZTA 42
PZTA 43
ICBO
-
-
-
-
20
20
µA
Emitter cutoff current
VEB = 3 V, IC = 0
IEBO - - 100 nA
DC current gain 1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
PZTA 42
PZTA 43
VCEsat
-
-
-
-
0.5
0.4
V
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
VBEsat - - 0.9
1) Pulse test: t < 300µs; D < 2%
PZTA 42, PZTA 43
Oct-14-19993
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
fT70 MHz--
pFCollector-base capacitance
VCB = 20 V, f = 1 MHz
PZTA 42
PZTA 43
Ccb
-
-
-
-
3
4
Transition frequency fT = f (IC)
VCE = 10V, f = 100MHz
EHP00723PZTA 42/43
10
MHz
10 10 mA
f
C
1010
T
555
Ι
0123
10
3
2
10
1
5
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
0
0.0
EHP00722PZTA 42/43
150
W
50 100 ˚C
0.2
0.4
0.6
0.8
1.0
1.2
1.6
T
AS
T
P
tot
T T;
AS
PZTA 42, PZTA 43
Oct-14-19994
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00320PZTA 42/43
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot max
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
DC current gain hFE = f (IC)
VCE = 10V
EHP00724PZTA 42/43
10
10 mA
h
C
10
5
FE
10
3
1
10
0
5
10 10 10
-1 0 1 2 3
Ι
5
10
2
555
2
Collector cutoff current ICBO = f (TA)
VCB = 160V
EHP00725PZTA 42/43
10
0˚C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
Collector current IC = f (VBE)
VCE = 10V
EHP00726PZTA 42/43
10
0V
BE
1.5
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
mA
5
10
2
