2N5088 / MMBT5088 / 2N5089 / MMBT5089
2N5088
2N5089 MMBT5088
MMBT5089
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Co l lector-Emitter Vo ltag e 2N5088
2N5089 30
25 V
V
VCBO Collector-Base Voltage 2N5088
2N5089 35
30 V
V
VEBO E m i t ter - Base V olt ag e 4 . 5 V
ICCollector C ur re nt - C ontinuo us 100 mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5088
2N5089 *MMBT5088
*MMBT5089
PDTotal Dev ice Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC The r m al Resista nce, Ju nction to C ase 83 .3 °C/W
RθJA The r mal Re si sta nce, Junction to A m bi ent 200 35 7 °C/W
CBETO-92
C
B
E
SOT-23
Mark: 1Q / 1R
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
2N5088 / MMBT5088 / 2N5089 / MMBT5089
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Condition s Min Max Un its
ON CHARACTERISTICS
hFE DC Curr en t G ain IC = 1 00 µA, VCE = 5.0 V 2N5088
2N5089
IC = 1.0 m A, V CE = 5.0 V 2N5088
2N5089
IC = 10 mA, VCE = 5.0 V* 2N5088
2N5089
300
400
350
450
300
400
900
1200
VCE(sat)Co llector-Emitter Saturatio n Voltage IC = 10 mA, IB = 1.0 mA 0.5 V
VBE(on)Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V
SMALL SIGNAL CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 m A, I B = 0 2N5088
2N5089 30
25 V
V
V(BR)CBO Col lect or -Base Br eakdow n Volt age IC = 1 00 µA, IE = 0 2N5088
2N5089 35
30 V
V
ICBO C olle c tor Cu toff C u r ren t V CB = 20 V, IE = 0 2N5088
VCB = 1 5 V, IE = 0 2N5089 50
50 nA
nA
IEBO Em itter Cutoff Current V EB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0 50
100 nA
nA
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271
Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n
Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10)
fTCurrent Gain - Ban dwidth Prod uct IC = 500 µA,VCE = 5. 0 m A,
f = 20 M Hz 50 MHz
Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 k Hz 4. 0 pF
Ceb Em i t ter - Base C apacit ance VBE = 0.5 V, IC = 0, f = 100 k Hz 10 pF
hfe Small-Signal Current Gain IC = 1.0 m A, VCE = 5. 0 V, 2N5088
f = 1.0 kHz 2N5089 350
450 1400
1800
NF Noise Figure IC = 100 µA, VCE = 5.0 V, 2N5088
RS = 10 kΩ,2N5089
f = 10 Hz to 1 5.7 kHz
3.0
2.0 dB
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN General Purpose Amplifier
(continued)
2N5088 / MMBT5088 / 2N5089 / MMBT5089
DC Typical Characteristics
Collector-Emitter Saturation
Voltage vs Col lector Current
P0
0.1 1 10 100
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V - COLLECTO R-E MITTER V OLT A GE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β β = 10
Base-Emitter Saturati o n
Voltage vs Col lector Current
P0
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - COLLECTO R-E MITTER V OLT A GE (V)
C
BESAT
β β = 1 0
25 °C
- 40 °C
125 °C
Base-Emitter ON V oltage vs
Collector Current
0.1 1 10 40
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
Collector-Cutoff Current
vs Ambient Temperature
P0
25 50 75 100 125 150
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
V = 45V
º
CB
T ypical Pulsed Current Gain
vs Col lector Curr ent
P07
0.01 0.03 0.1 0.3 1 3 10 30 100
0
50
100
150
200
250
300
350
400
I - COLLECTOR CURRENT ( mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
Vce=5V
NPN General Purpose Amplifier
(continued)
2N5088 / MMBT5088 / 2N5089 / MMBT5089
AC Typical Characteristics
Input / Output Capacitance
vs. Reverse Bias Voltage Contours of Constant Gain
Bandwidth Product (fT)
Wideband Noise Figure
vs. Source Resistance
Contours of Constant
Narrow Band Noise Figure
Noise Figure vs. Frequency
Normalized Collector Cutoff
Current vs. Ambient Temperature
NPN General Purpose Amplifier
(continued)
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
AC Typical Characteristics (continued)
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure Maximum Power Dissipation
vs. Ambient Temperature
2N5088 / MMBT5088 / 2N5089 / MMBT5089
Typical Common Emitter Characteristics (f = 1.0 kHz)
NPN General Purpose Amplifier
(continued)
