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NPN SILICON POWER TRANSISTOR
2SD882
NPN SILICON POWER TRANSISTOR
DATA SHEET
Document No. D17116EJ2V0DS00 (2nd edition)
(Previous No. TC-3564)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark shows major revised points.
2004
DESCRIPTION
The 2SD882 is NPN silicon transistor suited for the output stage of 3
watts audio amplifier, voltage regulator, DC-DC converter and relay
driver.
FEATURES
• Low saturation voltage
V
CE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A)
• Excellent hFE linearity and high hFE
h
FE = 60 to 400 (VCE = 2 V, IC = 1 A)
• Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature −55 to +150°C
Junction Temperature 150°C Maximum
Maximum Power Dissipations
Total Power Dissipation (TA = 25°C) 1.0 W
Total Power Dissipation (TC = 25°C) 10 W
Maximum Voltages and Currents (TA = 25°C)
V
CBO Collector to Base Voltage 40 V
V
CEO Collector to Emitter Voltage 30 V
V
EBO Emitter to Base Voltage 5.0 V
I
C(DC) Collector Current (DC) 3.0 A
I
C(pulse)Note Collector Current (pulse) 7.0 A
Note Pulse Test PW ≤ 350
µ
s, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
DC Current Gain hFE1 VCE = 2.0 V, IC = 20 mANote 30 150
DC Current Gain hFE2 VCE = 2.0 V, IC = 1.0 ANote 60 160 400
Gain Bandwidth Product fT VCE = 5.0 V, IC = 0.1 A 90 MHz
Output Capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 45 pF
Collector Cutoff Current ICBO VCB = 30 V, IE = 0 A 1.0
µ
A
Emitter Cutoff Current IEBO VEB = 3.0 V, IC = 0 A 1.0
µ
A
Collector Saturation Voltage VCE(sat) IC = 2.0 A, IB = 0.2 ANote 0.3 0.5 V
Base Saturation Voltage VBE(sat) IC = 2.0 A, IB = 0.2 ANote 1.0 2.0 V
Note Pulse Test: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
CLASSIFICATION OF hFE
Rank R Q P E
Range 60 to 120 100 to 200 160 to 320 200 to 400
Remark Test Conditions: VCE = 2.0 V, IC = 1.0 A
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
12 TYP.
2.3 TYP.2.3 TYP.
1.2 TYP.
0.55
2.5 ±0.2
12.0 MAX.13.0 MIN.
2.8 MAX.
3.8 ±0.2
0.8 +0.08
–0.05
+0.08
–0.05
1: Emitter
2: Collector: connected to mounting plane
3: Base
Data Sheet D17116EJ2V0DS
2
2SD882
TYPICAL CHARACTERISTICS (TA = 25°C)
I
C
=10A
•
I
B
I
E
=0A(C
ob
)
I
C
=0A(C
ib
)
T
A
T
C
V
CE
I
C
I
C
I
C
V
CB
V
EB
V
CE
V
CE
=10V
V
CE
I
C
=1.0A
I
C(DC)
MAX.
T
C
=25
°
C
IC
IC
I
C(pulse) 50%
I
B
hFE ∆Rth
PT
h
FE
V
BE
VBE
Cib
Cob
C
ib
C
ob
fT
V
CE
=5.0V
V
BE(sat)
V
CE(sat)
VBE(sat)
VCE(sat)
Note
Note
VCEO
2SD882
The information in this document is current as of March, 2004. The information is subject to change
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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•
•
•
•
•
•
M8E 02. 11-1
