IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
OptiMOS™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C2) 100 A
TC=100 °C 100
Pulsed drain current2) ID,pulse TC=25 °C 400
Avalanche energy, single pulse EAS ID=100 A, RGS=25 Ω340 mJ
Gate source voltage VGS ±20 V
Power dissipation Ptot TC=25 °C 214 W
Operating and storage temperature Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
1)J-STD20 and JESD22
2) See figure 3
VDS 100 V
RDS(on),max (TO 263) 4.2 mΩ
ID100 A
Product Summary
Type IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G
Package PG-TO263-3 PG-TO262-3 PG-TO220-3
Marking 042N10N 045N10N 045N10N
Rev. 2.5 page 1 2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 0.7 K/W
Thermal resistance, RthJA minimal footprint - - 62
junction - ambient 6 cm2 cooling area3) --50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 100 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=150 µA 2 2.7 3.5
Zero gate voltage drain current IDSS VDS=100 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=100 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=100 A,
TO 220, TO 262 - 3.9 4.5 mΩ
VGS=10 V, ID=50 A,
TO263 - 3.6 4.2
VGS=6 V, ID=50 A, TO
220, TO 262 - 4.7 7.7
VGS=6 V, ID=50 A,
TO263 - 4.4 7.4
Gate resistance RG- 1.4 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=100 A 73 145 - S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
Rev. 2.5 page 2 2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 6320 8410 pF
Output capacitance Coss - 1210 1610
Reverse transfer capacitance Crss -41-
Turn-on delay time td(on) -27-ns
Rise time tr-59-
Turn-off delay time td(off) -48-
Fall time tf-14-
Gate Char
g
e Characteristics4)
Gate to source charge Qgs -3039nC
Gate to drain charge Qgd -16-
Switching charge Qsw -27-
Gate charge total Qg- 88 117
Gate plateau voltage Vplateau - 4.7 - V
Output charge Qoss VDD=50 V, VGS=0 V - 122 162 nC
Reverse Diode
Diode continous forward current IS- - 100 A
Diode pulse current IS,pulse - - 400
Diode forward voltage VSD VGS=0 V, IF=100 A,
Tj=25 °C - 1.0 1.2 V
Reverse recovery time trr -68-ns
Reverse recovery charge Qrr - 135 - nC
4) See figure 16 for gate charge parameter definition
VR=50 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=50 V,
f=1 MHz
VDD=50 V, VGS=10 V,
ID=50 A, RG=1.6 Ω
VDD=50 V, ID=100 A,
VGS=0 to 10 V
Rev. 2.5 page 3 2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
tp [s]
ZthJC [K/W]
0
50
100
150
200
250
0 50 100 150 200
TC [°C]
Ptot [W]
0
20
40
60
80
100
120
0 50 100 150 200
TC [°C]
ID [A]
Rev. 2.5 page 4 2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V
5 V
6 V
7.5 V
10 V
0
3
6
9
0 50 100 150
ID [A]
RDS(on) [mΩ]
25 °C
175 °C
0
50
100
150
200
02468
VGS [V]
ID [A]
0
40
80
120
160
200
0 50 100 150
ID [A]
gfs [S]
4.5 V
5 V
5.5 V
6 V
7.5 V
10 V
0
80
160
240
320
400
012345
VDS [V]
ID [A]
Rev. 2.5 page 5 2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=100 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
2
4
6
8
10
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
150 µA
1500 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
104
103
102
101
0 20406080
VDS [V]
C [pF]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
103
102
101
100
0 0.5 1 1.5 2
VSD [V]
IF [A]
Rev. 2.5 page 6 2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=100 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20 V
50 V
80 V
0
2
4
6
8
10
0 20406080100
Qgate [nC]
VGS [V]
90
95
100
105
110
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
1
10
100
1000
1 10 100 1000
tAV [µs]
IAS [A]
Rev. 2.5 page 7 2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
PG-TO220-3: Outline
Rev. 2.5 page 8 2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
PG-TO262-3
Rev. 2.5 page 9 2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
PG-TO-263 (D²-Pak)
Rev. 2.5 page 10 2010-01-13
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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on the types in question, please contact the nearest Infineon Technologies Office.
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Rev. 2.5 page 11 2010-01-13
