©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE13006/13007
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse test: P W ≤300µs, Duty cycle≤2%
Symbol Parameter Value Units
VCBO
Collector-Base Voltage : MJE13006
: MJE13007 600
700 V
V
VCEO
Collector-Emitter Voltage : MJE13006
: MJE13007 300
400 V
V
VEBO Emitter- Base Voltage 9 V
IC Collector Current (DC) 8 A
ICP Collector Current (Pulse) 16 A
IB Base Current 4 A
PC Collector Dissipation (TC=25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. U nits
BVCEO Collector- Emitter Breakdown Voltage
: MJE13006
: MJE13007 IC = 10mA , IB = 0 300
400
V
V
IEBO Em itter Cut-off Current VEB = 9V, IC = 0 1 mA
hFE *DC Current Gain
VCE = 5V, I C = 2A
VCE = 5V, I C = 5A 8
5 60
30
VCE(sat) *Collector-Emitter Saturat ion Voltage IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
1
2
3
V
V
V
VBE (sat) *Base-Emitter Saturat ion Voltage IC = 2A, IB = 0.4A
IC = 5A, IB = 1A 1.2
1.6 V
V
Cob Output Capacitance VCB = 10V, f = 0.1MHz 110 pF
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz
tON Turn ON Time VCC = 125V, IC = 5A
IB1 = - IB2 = 1A
RL = 50Ω
1.6 µs
tSTG St orage Time 3 µs
tF Fa ll Time 0.7 µs
MJE13006/13007
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1.Base 2.Collector 3.Emitter
1TO-220
©2001 Fairchild Semiconductor Corporation
MJE13006/13007
Rev. A1, February 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating Area
0.1 1 10
1
10
100
VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
IC = 3 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SA TURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100 1000
1
10
100
1000
Cob[pF], OUT PUT CAPACITANC E
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10
10
100
1000
VCC=125V
IC=5IB
tD, VBE(off)=5V
tR
tR, tD [µs], TURN ON TIME
IC[A], COLLECTOR CURRENT
0.1 1 10
10
100
1000
10000 VCC=125V
IC=5IB
tF
tSTG
tSTG, tF [µs], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
MJE13006
MJE13007
100µs
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
©2001 Fairchild Semiconductor Corporation
MJE13006/13007
Rev. A1, February 2001
Typical Characteristics (Continued)
Figure 7. Power Derating
0 255075100125150175
0
10
20
30
40
50
60
70
80
90
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE13006/13007
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. G
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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changes at any time without notice in order to improve
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