BSO110N03MS G
OptiMOS
™
3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% Avalanche tested
• N-channel
• Very low on-resistance R
DS(on)
@ V
GS
=4.5 V
• Excellent gate charge x R
DS(on)
product (FOM)
• Qualified for consumer level application
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
10 secs steady state
Continuous drain current
1)
I
D
V
GS
=10 V, T
A
=25 °C 12.1 10 A
V
GS
=10 V, T
A
=90 °C 8.4 6.6
V
GS
=4.5 V, T
A
=25 °C 10.8 8.5
V
GS
=4.5 V, T
A
=90 °C 7.5 5.9
Pulsed drain current
2)
I
D,pulse
T
A
=25 °C
Avalanche current, single pulse
3)
I
AS
T
A
=25 °C
Avalanche energy, single pulse E
AS
I
D
=12.1 A, R
GS
=25 ΩmJ
Gate source voltage V
GS
V
Power dissipation
1)
P
tot
T
A
=25 °C 2.5 1.56 W
Operating and storage temperature T
j
, T
stg
°C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
85
12.1
20
±20
-55 ... 150
Type Package Marking
BSO110N03MS G PG-DSO-8 110N03MS
PG-DSO-8
V
DS
30 V
R
DS(on),max
V
GS
=10 V 11 mΩ
V
GS
=4.5 V 13.9
I
D
12.1 A
Product Summary
Rev.1.1 page 1 2009-11-19
BSO110N03MS G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point R
thJS
- - 35 K/W
Thermal resistance,
junction - ambient R
thJA
minimal footprint,
t
p
≤10 s - - 110
minimal footprint,
steady state - - 150
6 cm
2
cooling area
1)
,
t
p
≤10 s - - 50
6 cm
2
cooling area
1)
,
steady state - - 80
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V
(BR)DSS
V
GS
=0 V, I
D
=1 mA 30 - - V
Gate threshold voltage V
GS(th)
V
DS
=V
GS
, I
D
=250 µA 1 - 2
Zero gate voltage drain current I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 °C - 0.1 10 µA
V
DS
=30 V, V
GS
=0 V,
T
j
=125 °C - 10 100
Gate-source leakage current I
GSS
V
GS
=16 V, V
DS
=0 V - 10 100 nA
Drain-source on-state resistance R
DS(on)
V
GS
=4.5 V, I
D
=10.8 A - 11.1 13.9 mΩ
V
GS
=10 V, I
D
=12.1 A - 9.2 11
Gate resistance R
G
0.4 0.9 1.6 Ω
Transconductance g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=12.1 A 16 31 - S
3)
See figure 13 for more detailed information
Values
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
Rev.1.1 page 2 2009-11-19
BSO110N03MS G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance C
iss
- 1100 1500 pF
Output capacitance C
oss
- 390 520
Reverse transfer capacitance C
rss
- 24 -
Turn-on delay time t
d(on)
- 7.8 - ns
Rise time t
r
- 4.4 -
Turn-off delay time t
d(off)
- 9.5 -
Fall time t
f
- 4.4 -
Gate Charge Characteristics
4)
Gate to source charge Q
gs
- 3.4 - nC
Gate charge at threshold Q
g(th)
- 1.8 -
Gate to drain charge Q
gd
- 1.6 -
Switching charge Q
sw
- 3.1 -
Gate charge total Q
g
- 7.2 10
Gate plateau voltage V
plateau
- 2.9 - V
Gate charge total Q
g
V
DD
=15 V, I
D
=12.1 A,
V
GS
=0 to 10 V - 15 20 nC
Gate charge total, sync. FET Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 4.5 V - 6.2 8.3
Output charge Q
oss
V
DD
=15 V, V
GS
=0 V - 10.2 14
Reverse Diode
Diode continuous forward current I
S
- - 3 A
Diode pulse current I
S,pulse
- - 85
Diode forward voltage V
SD
V
GS
=0 V, I
F
=12.1 A,
T
j
=25 °C - 0.86 1.1 V
Reverse recovery charge Q
rr
V
R
=15 V, I
F
=I
S
,
di
F
/dt=400 A/µs - - 10 nC
4)
See figure 16 for gate charge parameter definition
T
A
=25 °C
Values
V
GS
=0 V, V
DS
=15 V,
f=1 MHz
V
DD
=15 V, V
GS
=4.5 V,
I
D
=12.1 A, R
G
=1.6 Ω
V
DD
=15 V, I
D
=12.1 A,
V
GS
=0 to 4.5 V
Rev.1.1 page 3 2009-11-19
BSO110N03MS G
1 Power dissipation 2 Drain current
P
tot
=f(T
A
); t
p
≤10 s I
D
=f(T
A
); t
p
≤10 s
parameter: V
GS
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
A
=25 °C
2)
; D=0 Z
thJA
=f(t
p
)
2)
parameter: t
p
parameter: D=t
p
/T
1 µs
10 µs
100 µs
1 ms
10 ms
100 ms
10 s
10
2
10
1
10
0
10
-1
10
2
10
1
10
0
10
-1
10
-2
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
2
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
2
10
1
10
0
10
-1
t
p
[s]
Z
thJA
[K/W]
0
0.5
1
1.5
2
2.5
3
0 40 80 120 160
T
A
[°C]
P
tot
[W]
10 V
4.5 V
0
2
4
6
8
10
12
14
0 40 80 120 160
T
A
[°C]
I
D
[A]
Rev.1.1 page 4 2009-11-19
BSO110N03MS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
parameter: T
j
2.8 V
3 V
3.2 V
3.5 V
4 V 4.5 V
5 V
10 V
0
5
10
15
20
25
30
0 5 10 15 20 25 30
I
D
[A]
R
DS(on)
[mΩ
Ω
Ω
Ω]
25 °C
150 °C
0
10
20
30
40
50
60
70
80
0 1 2 3 4 5
V
GS
[V]
I
D
[A]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
10
20
30
40
50
60
70
80
0 1 2 3
V
DS
[V]
I
D
[A]
0
10
20
30
40
50
0 5 10 15 20 25 30
I
D
[A]
g
fs
[S]
Rev.1.1 page 5 2009-11-19
BSO110N03MS G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=12.1 A; V
GS
=10 V V
GS(th)
=f(T
j
); V
GS
=V
DS
; I
D
=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(V
DS
); V
GS
=0 V; f=1 MHz I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
5
10
15
20
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[mΩ
Ω
Ω
Ω]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
10
0
0 10 20 30
V
DS
[V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
2
10
1
10
0
10
-1
0 0.5 1 1.5 2
V
SD
[V]
I
F
[A]
Rev.1.1 page 6 2009-11-19
BSO110N03MS G
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 ΩV
GS
=f(Q
gate
); I
D
=12.1 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
20
22
24
26
28
30
32
34
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
0.1
1
10
100
1 10 100 1000
t
AV
[µs]
I
AV
[A]
6 V
15 V
24 V
0
2
4
6
8
10
12
0 4 8 12 16
Q
gate
[nC]
V
GS
[V]
Rev.1.1 page 7 2009-11-19
BSO110N03MS G
Package Outline
PG-DSO-8: Outline
Footprint
Dimensions in mm
Rev.1.1 page 8 2009-11-19
BSO110N03MS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.1.1 page 9 2009-11-19
