ES3A - ES3J — Fast Rectifiers
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
ES3A - ES3J Rev. F2 1
April 2012
ES3A - ES3J
Fast Rectifiers
Features
• For surface mount applications.
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
• Superfast recovery times for high efficiency.
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
ES3A ES3B ES3C ES3D ES3J
VRRM Maximum Repetitive Reverse Voltage 50 100 150 200 600 V
IF(AV) Average Rectifi ed Forward Current,
.375” lead length @ Ta = 75°C 3.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 100 A
TJ, TSTG Operating Junction and Storage Temperature Range -50 to +150 °C
Symbol Parameter Value Units
PDPower Dissipation 1.66 W
RθJA Thermal Resistance, Junction to Ambient * 47 °C/W
RθJL Thermal Resistance, Junction to Lead * 12 °C/W
Symbol Parameter Value Units
ES3A ES3B ES3C ES3D ES3J
VFMaximum Forward Voltage @ IF = 3.0 A 0.95 1.7 V
Trr Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Typ. 20 35 ns
Max. 30 45 ns
IR
Maximum Reverse Current @ rated VR
Ta = 25°C
Ta = 100°C10
500 μA
μA
CTTotal Capacitance VR = 4.0 V, f = 1.0 MHz 45 pF
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
ES3A - ES3J — Fast Rectifiers
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
ES3A - ES3J Rev. F2 2
Typical Performance Characteristics
Figure 1. Foward Current Deration Curve Figure 2. Foward Voltage Characteristics
Figure 3. Total Capacitance Figure 4. Reverse Current vs Reverse Voltage
0 25 50 75 100 125 150 175
0
0.5
1
1.5
2
2.5
3
3.5
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HALF WAVE
60HZ
RESIS TIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LE AD
LENGTHS
0.01
0.1
1
10
100
0.40.60.81.01.21.41.61.8
ES3A-ES3D
ES3J
TA=25 oC
Pulse Width = 300us
2% Duty Cycle
Forward Voltage Drop, VF[V]
Forward Current , I F[A]
0.1 0.5 1 5 10 20 50 100 500
0
10
20
30
40
50
60
70
80
90
100
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
0 20406080100120140
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [uA]
T = 25 C
º
A
T = 100 C
º
A
T = 75 C
º
A
μ
Pulse
Generator
(Note 2)
50
Ω
NONINDUCTIVE 50
Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
Ω
NONINDUCTIVE
50V
(approx)
1. Rise time = 7.0 ns max; In put impedanc e = 1.0 megaohm 2 2 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
NOTES:
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 n s / cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
ES3A - ES3J — Fast Rectifiers
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
ES3A - ES3J Rev. F2 3
Package Dimensions
Dimensions in Inches(Millimeters)
SMC / DO - 214AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I61
