APT58M50JCU3 ISOTOP(R) Buck chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65m Max @ Tj = 25C ID = 58A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies D Features * G S * SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF A G * * * A S Power MOS 8TM MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant D ISOTOP(R) Absolute maximum ratings ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Max ratings 500 58 43 270 30 65 543 42 Unit V A V m W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT58M50JCU3 - Rev 0 September, 2009 Symbol VDSS APT58M50JCU3 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Tj = 25C VDS = 500V VGS = 0V Tj = 125C VGS = 10V, ID = 42A VGS = VDS, ID = 2.5mA VGS = 30 V Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Min 3 Typ 4 Max 250 1000 65 5 100 Unit Max Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge VGS = 10V VBus = 250V ID = 42A Td(on) Turn-on Delay Time Tr Td(off) Tf Min Turn-off Delay Time Fall Time pF 340 nC 75 155 60 Resistive switching @ 25C VGS = 15V VBus = 333V ID = 42A RG = 2.2 Rise Time Typ 10800 1164 148 70 ns 155 50 SiC chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current Min 600 Tj = 25C Tj = 175C Tc = 100C Tj = 25C Tj = 175C Typ Max 100 200 20 1.6 2 400 2000 VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 300V di/dt =800A/s 28 C Total Capacitance f = 1MHz, VR = 200V 130 f = 1MHz, VR = 400V 100 Unit V A A 1.8 2.4 V nC pF Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Min Junction to Case Thermal Resistance Typ Mosfet SiC Diode Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com 2500 -40 Max 0.23 1.35 20 Unit C/W V 150 300 1.5 29.2 C N.m g 2-5 APT58M50JCU3 - Rev 0 September, 2009 Thermal and package characteristics APT58M50JCU3 SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) Drain Anode 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical Mosfet Performance Curve 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 Single P ulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 3-5 APT58M50JCU3 - Rev 0 September, 2009 Thermal Impedance (C/W) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 APT58M50JCU3 Low Voltage Output Characteristics Low Voltage Output Characteristics 250 160 VGS=7,8 &10V 140 ID, Drain Current (A) TJ=25C 150 100 TJ=125C 50 6.5V 120 100 6V 80 5.5V 60 40 20 0 TJ=125C 0 0 5 10 15 20 0 5 20 25 30 Transfert Characteristics Normalized RDSon vs. Temperature 125 2.5 VGS=10V ID=42A ID, Drain Current (A) RDSon, Drain to Source ON resistance 15 VDS, Drain to Source Voltage (V) VDS, Drain to Source Voltage (V) 2 1.5 1 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 100 TJ=125C 75 50 25 TJ=25C 0.5 0 25 50 75 100 125 150 0 1 TJ, Junction Temperature (C) Gate Charge vs Gate to Source 3 4 5 6 C, Capacitance (pF) VDS=250V 8 VDS=400V 6 7 Capacitance vs Drain to Source Voltage 100000 VDS=100V ID=42A TJ=25C 10 2 VGS, Gate to Source Voltage (V) 12 VGS, Gate to Source Voltage 10 4 Ciss 10000 1000 Coss Crss 100 2 10 0 0 60 120 180 240 300 360 0 50 100 150 200 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 4-5 APT58M50JCU3 - Rev 0 September, 2009 ID, Drain Current (A) VGS=10V 200 APT58M50JCU3 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.4 0.9 1.2 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 400 30 IR Reverse Current (A) IF Forward Current (A) TJ=25C TJ=75C TJ=175C 20 TJ=125C 10 0 0 0.5 1 1.5 2 2.5 3 3.5 TJ=175C 350 300 TJ=125C 250 200 TJ=75C 150 100 TJ=25C 50 0 200 300 400 500 600 700 800 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 800 600 400 200 1 10 100 VR Reverse Voltage 1000 ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APT58M50JCU3 - Rev 0 September, 2009 0