APT58M50JCU3
APT58M50JCU3 – Rev 0 September, 2009
www.microsemi.com 1-5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
A
S
G
D
ISOTOP®
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 500 V
Tc = 25°C 58
ID Continuous Drain Current Tc = 80°C 43
IDM Pulsed Drain curre nt 270 A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 65 mΩ
PD Maximum Pow er Dissipation Tc = 25°C 543 W
IAR Avalanch e current (repetitive and non repetitive) 42 A
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Power MOS 8™ MOSFET
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent s w i t c hi ng behavior
- Positive temperature coefficient on VF
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
ISOTOP® Buck chopper
MOSFET + SiC chopper diode
Power module
VDSS = 500V
RDSon = 65mΩ Max @ Tj = 25°C
ID = 58A @ Tc = 25°C
A
D
G
S
APT58M50JCU3
APT58M50JCU3 – Rev 0 September, 2009
www.microsemi.com 2-5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 250
IDSS Zero Gate Voltage Drain Current VDS = 500V
VGS = 0V Tj = 125°C 1000 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 42A 65
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 4 5 V
IGSS Gate – Source Leakage Current VGS = ±30 V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 10800
Coss Output Capacitance 1164
Crss Reverse Transfer Capac itance
VGS = 0V
VDS = 25V
f = 1MHz 148 pF
Qg Total gate Charge 340
Qgs Gate – Source Charge 75
Qgd Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 42A 155
nC
Td(on) Turn-on Delay Time 60
Tr Rise Time 70
Td(off) Turn-off Delay Time 155
Tf Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 42A
RG = 2.2Ω 50
ns
SiC chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 100 400
IRM Maximum Reverse Leakage Current VR=600V Tj = 175°C 200 2000 µA
IF DC Forward Current Tc = 100°C 20 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 20A Tj = 175°C 2 2.4 V
QC Total Capacitive Charge IF = 20A, VR = 300V
di/dt =800A/µs 28 nC
f = 1MHz, VR = 200V 130
C Total Capacitance f = 1MHz, VR = 400V 100 pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Mosfet 0.23
RthJC Junction to Case Thermal Resistance SiC Diode 1.35
RthJA Junction to Ambient (IGBT & Diode) 20 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -40 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
APT58M50JCU3
APT58M50JCU3 – Rev 0 September, 2009
www.microsemi.com 3-5
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033) 12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Typical Mosfet Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular P ulse Duration (Seconds)
Thermal Impedanc e (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Source Gate
Drain
Anode
APT58M50JCU3
APT58M50JCU3 – Rev 0 September, 2009
www.microsemi.com 4-5
Low Vo ltage Output Characteristics
T
J
=25°C
T
J
=125°C
0
50
100
150
200
250
0 5 10 15 20
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
V
GS
=10V
Low Vo ltag e Ou tp u t Characteristics
5.5V
6V
6.5V
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25 30
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
V
GS
=7,8 &10V
T
J
=125°C
Normalized R
DSon
vs. Temperature
0.5
1
1.5
2
2.5
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
V
GS
=10V
I
D
=42A
R
DSon
, Drain to Sour ce ON resistance
Ciss
Crss
Coss
10
100
1000
10000
100000
0 50 100 150 200
V
DS
, Drain to Source Voltage (V)
C, Capacitance (p F)
Capacitance vs Drain to Source Vo l tag e
Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
25
50
75
100
125
01234567
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
Gate Charge vs Gate to Source
V
DS
=100V
V
DS
=250V
V
DS
=400V
0
2
4
6
8
10
12
0 60 120 180 240 300 360
Gate Charge (nC)
V
GS
, Gate to Source Vol tage
I
D
=42A
T
J
=25°C
APT58M50JCU3
APT58M50JCU3 – Rev 0 September, 2009
www.microsemi.com 5-5
Typical SiC Diode Performance Curve
Maxi mum Effective Transient Thermal Im ped an ce, Ju ncti o n to Case vs Pul se Duratio n
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
10
20
30
40
00.511.522.533.5
V
F
Forward Voltag e (V)
I
F
Forward Current (A)
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
50
100
150
200
250
300
350
400
200 300 400 500 600 700 800
V
R
Reverse Voltage (V)
I
R
Reverse Current (µA)
Capacitance vs.Reverse Voltage
0
200
400
600
800
1 10 100 1000
V
R
Reverse Voltage
C, Capacitance (pF)
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covere d by one or more of U.S patents 4,895,8 10 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,50 3,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,3 52,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
