MJD122 — NPN Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD122 Rev. B0 1
December 2009
MJD122
NPN Silicon Darlington Transistor
Features
• D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Fo rmed for Surface Mount Applicatio ns
• Electrically Similar to Popular TIP122
• Complement to MJD127
Absolute Maximum Ratings TA=25°C unless otherwise noted
Electrical Characteristics TA=25°C unless otherwise noted
* Pulse Test: PW≤300μs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 8 A
ICP Collector Current (Pulse) 16 A
IB Base Current 120 mA
PC Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (TA=25°C) 1.75 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 to 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) *Collector-Emitter Sus taining Voltage IC = 30mA, IB = 0 100 V
ICEO Collector Cut-off Current VCE = 50V, IB =0 10 μA
ICBO Collector Cut-off Current VCB = 100V, IE = 0 10 μA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE *DC Current Gain VCE = 4V, IC = 4A
VCE = 4V, VEB = 8A 1000
100 12K
VCE(sat) *Collector-Emitter Saturati on Voltage IC = 4A, IB = 16mA
IC = 8A, IB = 80mA 2
4 V
V
VBE(sat) *Base-Emitter Saturation Voltage IC = 8A, IB = 80mA 4.5 V
VBE(on) *Base-Emitter On Voltage VCE = 4V, IC = 4A 2.8 V
Cob Output Capacitance VCB = 10V, IE = 0
f= 0.1MHz 200 pF
1.Base 2.Collector 3.Emitter
D-PAK
1
Equivalent Circuit
B
E
C
R1 R2
R1 8kΩ≅
R2 0.12 kΩ≅
MJD122 — NPN Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD122 Rev. B0 2
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Ti me Figure 6. Safe Ope rating Area
0.1 1 10
100
1k
10k
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
IC = 250 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAG E
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10
0.01
0.1
1
10
VCC= 30V
IC=250IB
IB1=IB2
tD, VBE(off)=0
tR
tR,tD[μs], TURN ON TIME
IC[A], COLLECTOR CURRENT
0.1 1 10
0.1
1
10
VCC=30V
IC=250IB
tF
tSTG
tSTG,tF[μs], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
500
μ
s
5ms
100
μ
s
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
MJD122 — NPN Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD122 Rev. B0 3
Typical Performance Characteristics (Continued)
Figure 1. Power Derating
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
MJD122 — NPN Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD122 Rev. B0 4
Mechanical Dimensions
6.60
±0.20
2.30
±0.1
0
0.50
±0.1
0
5.34
±0.30
0.70
±0.20
0.60
±0.20
0.80
±0.20
9.50
±0.30
6.10
±0.20
2.70
±0.20
9.50
±0.30
6.10
±0.20
2.70
±0.20
MIN0.55
0.76
±0.10
0.50
±0.1
0
1.02
±0.2
0
2.30
±0.2
0
6.60
±0.20
0.76
±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89
±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91
±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I41
