MMBT2222AWT1-D - ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

July, 2001 – Rev. 2 1Publication Order Number:

MMBT2222AWT1/D

MMBT2222AWT1

Preferred Device

General Purpose Transistor

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–323/SC–70 package which

is designed for low power surface mount applications.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO 40 Vdc

Collector–Base Voltage VCBO 75 Vdc

Emitter–Base V oltage VEBO 6.0 Vdc

Collector Current – Continuous IC600 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°CPD150 mW

Thermal Resistance

Junction to Ambient RJA 833 °C/W

Junction and Storage Temperature TJ, Tstg –55 to +150 °C

Device Package Shipping

ORDERING INFORMATION

MMBT2222AWT1 SC–70

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SC–70

CASE 419

STYLE 3

3000/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

MARKING DIAGRAM

P1 M

P1 = Specific Device Code

M = Date Code

COLLECTOR

BASE

EMITTER

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (Note 1.)

(IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 – Vdc

Collector–Base Breakdown Voltage

(IC = 10 Adc, IE = 0) V(BR)CBO 75 – Vdc

Emitter–Base Breakdown Voltage

(IE = 10 Adc, IC = 0) V(BR)EBO 6.0 – Vdc

Base Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc) IBL – 20 nAdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX – 10 nAdc

ON CHARACTERISTICS (Note 1.)

DC Current Gain (Note 1.)

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

HFE 35

100

–

300

–

Collector–Emitter Saturation Voltage (Note 1.)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat) –

–0.3

1.0

Vdc

Base–Emitter Saturation Voltage (Note 1.)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat) 0.6

–1.2

2.0

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT300 – MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo – 8.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo – 30 pF

Input Impedance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie 0.25 1.25 k ohms

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre – 4.0 X 10–4

Small–Signal Current Gain

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 75 375 –

Output Admittance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe 25 200 mhos

Noise Figure

(VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k, f = 1.0 kHz) NF – 4.0 dB

SWITCHING CHARACTERISTICS

Delay Time (VCC = 3.0 Vdc, VBE = –0.5 Vdc, td– 10

Rise Time

(VCC

Vdc

VBE

Vdc

IC = 150 mAdc, IB1 = 15 mAdc) tr– 25 ns

Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts– 225

Fall Time

(VCC

Vdc

150

mAdc

IB1 = IB2 = 15 mAdc) tf– 60 ns

1. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

MMBT2222AWT1

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Figure 1. Turn–On Time Figure 2. Turn–Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

-2 V < 2 ns

1.0 to 100 µs,

DUTY CYCLE ≈ 2.0%

1 kΩ

+30 V

200

CS* < 10 pF

+16 V

-14 V

< 20 ns

1.0 to 100 µs,

DUTY CYCLE ≈ 2.0%

1 k

+30 V

200

CS* < 10 pF

-4 V

1N914

1000

100

200

300

500

700

1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

hFE, DC CURRENT GAINVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

MMBT2222AWT1

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Figure 5. Turn–On Time

IC, COLLECTOR CURRENT (mA)

100

200

t, TIME (ns)

10 20 70

5.0

100

5.0 7.0 30 50 200

7.0

IC/IB = 10

TJ = 25°C

tr @ VCC = 30 V

td @ VEB(off) = 2.0 V

td @ VEB(off) = 0

3.0

2.0

300 500

500

t, TIME (ns)

5.0

7.0

100

200

300

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

10 20 70 1005.0 7.0 30 50 200 300 500

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

t′s = ts - 1/8 tf

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

2.0

0.1

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 5.0 10 20 50

0.2 0.5

100

NF, NOISE FIGURE (dB)

0.01 0.02 0.05

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC = 1.0 mA, RS = 150 Ω

500 µA, RS = 200 Ω

100 µA, RS = 2.0 kΩ

50 µA, RS = 4.0 kΩ

f = 1.0 kHz

IC = 50 µA

100 µA

500 µA

1.0 mA

4.0

6.0

8.0

2.0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

3.0

5.0

7.0

2.0

0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.2 0.3 0.5 0.7

Ccb

Ceb

Figure 10. Current–Gain Bandwidth Product

IC, COLLECTOR CURRENT (mA)

100

200

300

500

fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

VCE = 20 V

TJ = 25°C

MMBT2222AWT1

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Figure 11. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

Figure 12. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

-0.5

+0.5

COEFFICIENT (mV/ C)

-1.0

-1.5

-2.5

RVC for VCE(sat)

RVB for VBE

0.1 1.0 2.0 5.0 10 20 50

0.2 0.5 100 200 500 1.0 k

1.0 V

-2.0

0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500

MMBT2222AWT1

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PD = TJ(max) – TA

RθJA

PD = 150°C – 25°C

0.625°C/W = 200 milliwatts

•The soldering temperature and time should not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied dur-

ing cooling

* Soldering a device without preheating can cause exces-

sive thermal shock and stress which can result in damage

to the device.

INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

SC–70/SOT–323 POWER DISSIPATION

The power dissipation of the SC–70/SOT–323 is a func-

tion of the pad size. This can vary from the minimum pad

size for soldering to the pad size given for maximum power

dissipation. Power dissipation for a surface mount device

is determined by TJ(max), the maximum rated junction tem-

perature of the die, RθJA, the thermal resistance from the

device junction to ambient; and the operating temperature,

TA. Using the values provided on the data sheet, PD can be

calculated as follows.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature TA of 25°C, one

can calculate the power dissipation of the device which in

this case is 200 milliwatts.

The 0.625°C/W assumes the use of the recommended

footprint on a glass epoxy printed circuit board to achieve

a power dissipation of 200 milliwatts. Another alternative

would be to use a ceramic substrate or an aluminum core

board such as Thermal Clad. Using a board material such

as Thermal Clad, a higher power dissipation of 300 milli-

watts can be achieved using the same footprint.

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within

a short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference should be a maximum of 10°C.

inches

0.035

0.9

0.075

0.7

1.9

0.028

0.65

0.025

0.65

0.025

MMBT2222AWT1

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STEP 1

PREHEAT

ZONE 1

RAMP"

STEP 2

VENT

SOAK"

STEP 3

HEATING

ZONES 2 & 5

RAMP"

STEP 4

HEATING

ZONES 3 & 6

SOAK"

STEP 5

HEATING

ZONES 4 & 7

SPIKE"

STEP 6

VENT

STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO 219°C

PEAK AT

SOLDER JOINT

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

100°C

150°C

160°C

140°C

Figure 13. Typical Solder Heating Profile

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

170°C

For any given circuit board, there will be a group of

control settings that will give the desired heat pattern. The

operator must set temperatures for several heating zones,

and a figure for belt speed. Taken together, these control

settings make up a heating “profile” for that particular

circuit board. On machines controlled by a computer, the

computer remembers these profiles from one operating

session t o the next. Figure 7 shows a typical heating profile

for use when soldering a surface mount device to a printed

circuit board. This profile will vary among soldering

systems but it is a good starting point. Factors that can

affect the profile include the type of soldering system in

use, density and types of components on the board, type of

solder used, and the type of board or substrate material

being used. This profile shows temperature versus time.

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

or stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the surface mounted package

should be the same as the pad size on the printed circuit

board, i.e., a 1:1 registration.

TYPICAL SOLDER HEATING PROFILE

The line on the graph shows the actual temperature that

might be experienced on the surface of a test board at or

near a central solder joint. The two profiles are based on a

high density and a low density board. The Vitronics

SMD310 convection/infrared reflow soldering system was

used to generate this profile. The type of solder used was

62/36/2 Tin Lead Silver with a melting point between

177–189°C. When this type of furnace is used for solder

reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because i t has a lar ge surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

MMBT2222AWT1

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.071 0.087 1.80 2.20

B0.045 0.053 1.15 1.35

C0.032 0.040 0.80 1.00

D0.012 0.016 0.30 0.40

G0.047 0.055 1.20 1.40

H0.000 0.004 0.00 0.10

J0.004 0.010 0.10 0.25

K0.017 REF 0.425 REF

L0.026 BSC 0.650 BSC

N0.028 REF 0.700 REF

S0.079 0.095 2.00 2.40

0.05 (0.002) STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SC–70/SOT–323

CASE 419–04

ISSUE L

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Sales Representative.

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