SPB21N50C3 - Infineon Technologies

2005-11-07

Rev. 2.3 Page 1

SPB21N50C3

Cool MOS™ Power Transistor VDS @ T

max 560 V

RDS

(

)

0.19 Ω

ID21 A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dtrated

• Ultra low effective capacitances

• Improved transconductance

PG-TO263

Marking

21N50C3

Type Package Ordering Code

SPB21N50C3 PG-TO263 Q67040-S4566

Maximum Ratings

Parameter Symbol Value Unit

Continuous drain current

TC = 25 °C

TC = 100 °C

13.1

Pulsed drain current, t

limited by T

max ID

uls 63 A

Avalanche energy, single pulse

ID=10A, VDD=50V

EAS 690 mJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=21A, VDD=50V

EAR 1

Avalanche current, repetitive t

R limited by T

max IAR 21 A

Gate source voltage VGS ±20 V

Gate source voltage AC (f >1Hz) VGS ±30

Power dissipation, TC = 25°C Ptot 208 W

SPB

Operating and storage temperature T

,Tst

-55...+150 °C

Reverse diode dv/dt

dv/dt

15 V/ns

http://store.iiic.cc/

2005-11-07

Rev. 2.3 Page 2

SPB21N50C3

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

VDS = 400 V, ID = 21 A, Tj = 125 °C

dv/dt50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case RthJC - - 0.6 K/W

Thermal resistance, junction - case, FullPAK RthJC

FP - - 3.6

Thermal resistance, junction - ambient, leaded RthJA - - 62

Thermal resistance, junction - ambient, FullPAK RthJA

FP - - 80

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

Soldering temperature, reflow soldering, MSL1

1.6 mm (0.063 in.) from case for 10s 4)

Tsold - - 260 °C

Electrical Characteristics, at T

=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500 - - V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=21A - 600 -

Gate threshold voltage VGS

(

)

ID=1000µA, VGS=VD

2.1 3 3.9

Zero gate voltage drain current IDSS VDS=500V, VGS=0V,

Tj=25°C

Tj=150°C

0.1

100

µA

Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=13.1A

Tj=25°C

Tj=150°C

0.16

0.54

0.19

Ω

Gate input resistance RGf=1MHz, open drain - 0.53 -

http://store.iiic.cc/

2005-11-07

Rev. 2.3 Page 3

SPB21N50C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=13.1A

- 18 - S

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz

- 2400 - pF

Output capacitance Coss - 1200 -

Reverse transfer capacitance Crss - 30 -

Effective output capacitance,5)

energy related

Co(er) VGS=0V, VDS=400V - 87 -

Effective output capacitance,6)

time related

Co(tr) - 181 -

Turn-on delay time td(on) VDD=380V, VGS=0/10V,

ID=21A,

RG=3.6Ω

- 10 - ns

Rise time tr- 5 -

Turn-off delay time td(off) - 67 -

Fall time tf- 4.5 -

Gate Charge Characteristics

Gate to source charge Qgs VDD=380V, ID=21A - 10 - nC

Gate to drain charge Qgd - 50 -

Gate charge total QgVDD=380V, ID=21A,

VGS=0 to 10V

- 95 -

Gate plateau voltage V

(

plateau

)

VDD=380V, ID=21A - 5 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

4Soldering temperature for TO-263: 220°C, reflow

5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

6Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

7ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.

Identical low-side and high-side switch.

http://store.iiic.cc/

2005-11-07

Rev. 2.3 Page 4

SPB21N50C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Inverse diode continuous

forward current

ISTC=25°C - - 21 A

Inverse diode direct current,

pulsed ISM - - 63

Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V

Reverse recovery time trr VR=380V, IF=IS ,

diF/dt=100A/µs

- 450 - ns

Reverse recovery charge Qrr - 9 - µC

Peak reverse recovery current Irrm - 60 - A

Peak rate of fall of reverse

recovery current

dirr/dt Tj=25°C - 1200 - A/µs

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

Rth1 0.00769 K/W Cth1 0.0003763 Ws/K

Rth2 0.015 Cth2 0.001411

Rth3 0.029 Cth3 0.001931

Rth4 0.114 Cth4 0.005297

Rth5 0.136 Cth5 0.012

Rth6 0.059 Cth6 0.091

SPB SPB

External Heatsink

TjTcase

Tamb

Cth1 Cth2

Rth1 Rth,n

Cth,n

Ptot (t)

http://store.iiic.cc/

2005-11-07

Rev. 2.3 Page 5

SPB21N50C3

1 Power dissipation

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

100

120

140

160

180

200

240 SPP21N50C3

Ptot

2 Power dissipation FullPAK

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

Ptot

3 Safe operating area

ID= f ( VDS )

parameter : D = 0 , TC=25°C

10 010 110 210 3

VDS

-2

-1

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

tp = 10 ms

4 Safe operating area FullPAK

ID = f (VDS)

parameter: D = 0, TC = 25°C

10 010 110 210 3

VDS

-2

-1

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

tp = 10 ms

http://store.iiic.cc/

2005-11-07

Rev. 2.3 Page 6

SPB21N50C3

5 Transient thermal impedance

ZthJC = f(tp)

parameter: D=tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

-4

-3

-2

-1

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

6 Transient thermal impedance FullPAK

ZthJC = f(tp)

parameter: D = tp/t

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1

-3

-2

-1

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

7 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp= 10 µs, VGS

0 5 10 15 V 25

VDS

Vgs = 6V

Vgs = 5.5V

Vgs = 5V

Vgs = 4.5V

Vgs = 4V

Vgs = 20V

Vgs = 7V

Vgs = 6.5V

8 Typ. output characteristic

ID = f (VDS); Tj=150°C

parameter: tp= 10 µs, VGS

0 5 10 15 V 25

VDS

Vgs = 5V

Vgs = 4.5V

Vgs = 4V

Vgs = 20V

Vgs = 7V

Vgs = 6V

Vgs = 5.5V

http://store.iiic.cc/

2005-11-07

Rev. 2.3 Page 7

SPB21N50C3

9 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

0 5 10 15 20 25 30 A 40

0.3

0.6

0.9

Ω

1.5

RDS(on)

Vgs = 4V

Vgs = 4.5V

Vgs = 5V

Vgs = 5.5V

Vgs = 6V

Vgs = 20V

10 Drain-source on-state resistance

RDS(on) = f(Tj)

parameter : ID = 13.1 A, VGS = 10 V

-60 -20 20 60 100 °C 180

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Ω

1.1 SPP21N50C3

RDS(on)

typ

98%

11 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0 2 4 6 V 10

VGS

Tj = 150°C

Tj = 25°C

12 Typ. gate charge

VGS =f (QGate)

parameter: ID = 21 A pulsed

0 20 40 60 80 100 nC 140

QGate

16 SPP21N50C3

VGS

0,8 VDS max

DS max

0,2

http://store.iiic.cc/

2005-11-07

Rev. 2.3 Page 8

SPB21N50C3

13 Forward characteristics of body diode

IF = f (VSD)

parameter: T

, tp= 10 µs

0 0.4 0.8 1.2 1.6 2 2.4 V3

VSD

-1

SPP21N50C3

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

14 Avalanche SOA

IAR = f (tAR)

par.: Tj≤ 150 °C

10 -3 10 -2 10 -1 10 010 110 210 4

µs

tAR

IAR

Tj(Start)=25°C

Tj(Start)=125°C

15 Avalanche energy

EAS = f(Tj)

par.: ID = 10 A, VDD = 50 V

20 40 60 80 100 120 °C 160

100

150

200

250

300

350

400

450

500

550

600

750

EAS

16 Drain-source breakdown voltage

V(BR)DSS = f(Tj)

-60 -20 20 60 100 °C 180

450

460

470

480

490

500

510

520

530

540

550

560

570

600

SPP21N50C3

V(BR)DSS

http://store.iiic.cc/

2005-11-07

Rev. 2.3 Page 9

SPB21N50C3

17 Avalanche power losses

PAR = f (f )

parameter: EAR=1mJ

10 410 510 6

100

200

300

500

PAR

18 Typ. capacitances

C = f(VDS)

parameter: VGS=0V, f=1 MHz

0 100 200 300 V 500

VDS

Ciss

Coss

Crss

19 Typ. Coss stored energy

Eoss=f(VDS)

0 50 100 150 200 250 300 350 400 V 500

VDS

µJ

Eoss

http://store.iiic.cc/

2005-11-07

Rev. 2.3 Page 10

SPB21N50C3

Definition of diodes switching characteristics

http://store.iiic.cc/

511-07

Rev. 2.3 PDJH

63%211&

PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22

http://store.iiic.cc/

2005-11-07

Rev. 2.3 Page 12

SPB21N50C3

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

http://store.iiic.cc/