SOT23
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996 ✪
PARTMARKING DETAIL – SA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 100 V
Drain-Gate Voltage VDGR 100 V
Continuous Drain Current at Tamb=25°C ID170 mA
Pulsed Drain Current IDM 680 mA
Gate-Source Voltage VGS ±20 V
Peak Gate-Source Voltage VGSM ±20 V
Power Dissipation at Tamb=25°C Ptot 360 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS 100 V ID=0.25mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 0.8 2.2 2.8 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 10 50 nA VGS=±20V, VDS=0V
Zero Gate Voltage
Drain Current
IDSS 1
2
15
60
10
µA
µA
nA
VDS=100V, VGS=0V
VDS=100V, VGS=0V, T=125°C(2)
VDS=20V, VGS=0V
Static Drain-Source
On-State Resistance (1)
RDS(on) 56ΩVGS=10V, ID=100mA
Forward
Transconductance(1)(2)
gfs 80 120 mS VDS=25V, ID=100mA
Input Capacitance (2) Ciss 20 pF
VDS=25V, VGS=0V, f=1MHz
Common Source
Output Capacitance (2)
Coss 9pF
Reverse Transfer
Capacitance (2)
Crss 4pF
Turn-On Delay Time (2)(3) td(on) 10 ns
VDD ≈30V, ID=280mA
Rise Time (2)(3) tr10 ns
Turn-Off Delay Time (2)(3) td(off) 15 ns
Fall Time (2)(3) tf25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ωsource impedance and <5ns rise time on a pulse generator
For typical characteristics graphs see ZVN3310F datasheet.
BSS123
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G
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