2N6509T - ON Semiconductor

© Semiconductor Components Industries, LLC, 2008

April, 2006 - Rev. 8

1Publication Order Number:

2N6504/D

2N6504 Series

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half‐wave ac control applications, such as

motor controls, heating controls and power supply crowbar circuits.

Features

•Glass Passivated Junctions with Center Gate Fire for Greater

Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Constructed for Low Thermal

Resistance, High Heat Dissipation and Durability

•Blocking Voltage to 800 Volts

•300 A Surge Current Capability

•Pb-Free Packages are Available*

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SCRs

25 AMPERES RMS

50 thru 800 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

TO-220AB

CASE 221A

STYLE 3

PIN ASSIGNMENT

Anode

Gate

Cathode

4Anode

MARKING

DIAGRAM

2N650xG

AYWW

x = 4, 5, 7, 8 or 9

A = Assembly Location

Y = Year

WW = Work Week

G = Pb-Free Device

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

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2N6504 Series

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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

*Peak Repetitive Off-State Voltage (Note 1)

(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C)

2N6504

2N6505

2N6507

2N6508

2N6509

VDRM,

VRRM

100

400

600

800

On‐State Current RMS (180° Conduction Angles; TC = 85°C) IT(RMS) 25 A

Average On‐State Current (180° Conduction Angles; TC = 85°C) IT(AV) 16 A

Peak Non‐repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) ITSM 250 A

Forward Peak Gate Power (Pulse Width ≤1.0 ms, TC = 85°C) PGM 20 W

Forward Average Gate Power (t = 8.3 ms, TC = 85°C) PG(AV) 0.5 W

Forward Peak Gate Current (Pulse Width ≤1.0 ms, TC = 85°C) IGM 2.0 A

Operating Junction Temperature Range TJ-40 to +125 °C

Storage Temperature Range Tstg -40 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

*Thermal Resistance, Junction-to-Case RqJC 1.5 °C/W

*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

*Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C

TJ = 125°C

IDRM,

IRRM -

2.0

ON CHARACTERISTICS

*Forward On-State Voltage (Note 2) (ITM = 50 A) VTM - - 1.8 V

*Gate Trigger Current (Continuous dc) TC = 25°C

(VAK = 12 Vdc, RL = 100 W)T

C = -40°C

IGT -

9.0

*Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = -40°C) VGT - 1.0 1.5 V

Gate Non‐Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125°C) VGD 0.2 - - V

*Holding Current TC = 25°C

(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = -40°C

IH-

*Turn‐On Time (ITM = 25 A, IGT = 50 mAdc) tgt - 1.5 2.0 ms

Turn‐Off Time (VDRM = rated voltage)

(ITM = 25 A, IR = 25 A)

(ITM = 25 A, IR = 25 A, TJ = 125°C)

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off‐State Voltage (Gate Open, Rated VDRM, Exponential Waveform) dv/dt - 50 - V/ms

*Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2N6504 Series

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+ Current

+ Voltage

VTM

IDRM at VDRM

Symbol Parameter

VDRM Peak Repetitive Off State Forward Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Off State Reverse Voltage

IRRM Peak Reverse Blocking Current

VTM Peak On State Voltage

IHHolding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode -

Forward Blocking Region

IRRM at VRRM

(off state)

T , MAXIMUM CASE TEMPERATURE ( C)°

dc180°

110

60°

α = 30°

0 4.0 8.0 12 20

α = CONDUCTION ANGLE

IT(AV), ON‐STATE FORWARD CURRENT (AMPS)

90°

P , AVERAGE POWER (WATTS)

(AV)

180°

90°

8.0

TJ = 125°C

60°

α = 30°

IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)

160 4.0 8.0 12 20

α = CONDUCTION ANGLE

Figure 1. Average Current Derating Figure 2. Maximum On-State Power Dissipation

2N6504 Series

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1.0

0.02

0.03

0.05

0.07

0.1

100

0.2

0.3

0.5

0.7

0.2 0.3 0.5 1.0 2.0

25°C

125°C

0.4

0.1

ZqJC(t) = RqJC • r(t)

1 CYCLE

1.0

200

SURGE IS PRECEDED AND

FOLLOWED BY RATED CURRENT

TC = 85°C

f = 60 Hz

NUMBER OF CYCLES

225

250

275

300

2.0 3.0 4.0 6.0 8.0 10

0.1

0.01

t, TIME (ms)

3.0 5.0

175

0.2

0.3

0.5

0.7

7.0

5.0

1.0

2.0

3.0

vF, INSTANTANEOUS VOLTAGE (VOLTS)

1.2 2.01.6 2.4 2.80.8

30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k

I , PEAK SURGE CURRENT (AMP)

TSM

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) F

i , INSTANTANEOUS FORWARD CURRENT (AMPS)

Figure 3. Typical On-State Characteristics Figure 4. Maximum Non-Repetitive Surge Current

Figure 5. Thermal Response

2N6504 Series

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TYPICAL TRIGGER CHARACTERISTICS

Figure 6. Typical Gate Trigger Current

versus Junction Temperature

Figure 7. Typical Gate Trigger Voltage

versus Junction Temperature

Figure 8. Typical Holding Current

versus Junction Temperature

100

125110806550355-10-25 20

TJ, JUNCTION TEMPERATURE (°C)

IGT, GATE TRIGGER CURRENT (mA)

-40 95

VGT

125110958050355-40

0.8

-10-25 20

TJ, JUNCTION TEMPERATURE (°C)

0.6

0.4

0.2

, GATE TRIGGER VOLTAGE (VOLTS)

1.0

0.9

0.7

0.5

0.3

I , HOLDING CURRENT (mA)

TJ, JUNCTION TEMPERATURE (°C)

100

125110958050355-40 -10-25 20 65

2N6504 Series

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ORDERING INFORMATION

Device Package Shipping

2N6504 TO-220AB

500 Units / Box

2N6504G TO-220AB

(Pb-Free)

2N6505 TO-220AB

2N6505G TO-220AB

(Pb-Free)

2N6505T TO-220AB

50 Units / Rail

2N6505TG TO-220AB

(Pb-Free)

2N6507 TO-220AB

500 Units / Box

2N6507G TO-220AB

(Pb-Free)

2N6507T TO-220AB

50 Units / Rail

2N6507TG TO-220AB

(Pb-Free)

2N6508 TO-220AB

500 Units / Box

2N6508G TO-220AB

(Pb-Free)

2N6508TG TO-220AB

(Pb-Free) 50 Units / Rail

2N6509 TO-220AB

500 Units / Box

2N6509G TO-220AB

(Pb-Free)

2N6509T TO-220AB

50 Units / Rail

2N6509TG TO-220AB

(Pb-Free)

2N6504 Series

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PACKAGE DIMENSIONS

TO-220AB

CASE 221A-07

ISSUE AA

STYLE 3:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.022 0.36 0.55

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

-T- SEATING

PLANE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights

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2N6504/D

PUBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81-3-5773-3850

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Email: orderlit@onsemi.com

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For additional information, please contact your local

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