2N6275 - ON Semiconductor

High-Power NPN Silicon

Transistors

. . . designed for use in industrial–military power amplifier and

switching circuit applications.

•High Collector Emitter Sustaining —

VCEO(sus) = 100 Vdc (Min) — 2N6274

= 120 Vdc (Min) — 2N6275

= 150 Vdc (Min) — 2N6277

•High DC Current Gain —

hFE = 30–120 @ IC = 20 Adc

= 10 (Min) @ IC = 50 Adc

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc

•Fast Switching Times @ IC 20 Adc

tr = 0.35 ms (Max)

ts = 0.8 ms (Max)

tf = 0.25 ms (Max)

•Complement to 2N6377–79

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS(1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

2N6274

ÎÎÎ

2N6275

ÎÎÎÎ

2N6277

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

120

ÎÎÎ

140

ÎÎÎÎ

180

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

100

ÎÎÎ

120

ÎÎÎÎ

150

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

6.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

IC

ÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎ

50

100

ÎÎÎ

Î

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

IB

ÎÎÎÎÎÎÎÎ

20

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25C

Derate above 25C

ÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎ

250

1.43

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

Î

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTIC

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

0.7

ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 9 1Publication Order Number:

2N6274/D

2N6274

2N6275

2N6277

*ON Semiconductor Preferred Device

50 AMPERE

POWER TRANSISTORS

NPN SILICON

100, 120, 140, 150 VOLTS

250 WATTS

*

CASE 197A–05

TO–204AE

(TO–3)

2N6274 2N6275 2N6277

http://onsemi.com

2

0 25 75 200

Figure 1. Power Derating

200

250

150

100

50

0

TC, CASE TEMPERATURE (°C)

10050 125 150 175

PD, POWER DISSIPATION (WATTS)

2N6274 2N6275 2N6277

http://onsemi.com

3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (2)

IC = 50 mAdc, IB = 0) 2N6274

2N6275

2N6277

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

100

120

150

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0) 2N6274

(VCE = 60 Vdc, IB = 0) 2N6275

(VCE = 75 Vdc, IB = 0) 2N6277

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

50

ÎÎÎ

Î

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCB, VEB(off) = 1.5 Vdc)

(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEX

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

10

1.0

ÎÎÎ

Î

ÎÎÎ

µAdc

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

IC = 1.0 Adc, VCE = 4.0 Vdc)

IC = 20 Adc, VCE = 4.0 Vdc)

IC = 50 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

50

30

10

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

120

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Coliector–Emitter Saturation Voltage

IC = 20 Adc, IB = 2.0 Adc)

IC = 50 Adc, IB = 10 Adc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE (sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

3.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

IC = 20 Adc, IB = 2.0 Adc)

IC = 50 Adc, IB = 10 Adc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.8

3.5

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 20 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

—

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain Bandwidth Product (3) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎÎ

fT

ÎÎÎ

30

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

ÎÎÎÎÎ

Cob

ÎÎÎ

—

ÎÎÎÎ

600

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rise Time

(VCC = 80 Vdc, IC = 20 Adc, IB1 = 2.0 Adc, VBE(off) = 5.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

tr

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.35

ÎÎÎ

Î

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Time

(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)

ÎÎÎÎÎ

ts

ÎÎÎ

—

ÎÎÎÎ

0.80

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Fall Time

(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

tf

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.25

ÎÎÎ

Î

ÎÎÎ

µs

*Indicates JEDEC Registered Data.

(2) Pulse Test: Pulse Width  300 µs, Duty Cycle  2.0%.

(3) fT = |hfe| • ftest

2N6274 2N6275 2N6277

http://onsemi.com

4

VCC

+ 80 V

RC

4.0 OHMS

RB

10 OHMS

tr, tf ≤ 10 ns

DUTY CYCLE = 0.5%

30 µs

+ 21.5 V

0

- 18.5 V 1N3879

- 4.0 V

Figure 2. Switching Time Test Circuit

0.5

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)

µ

2.0

0.7 1.0 2.0 3.0 5.0 7.0 10 50

tr @ VCC = 80 V

td @ VBE(off) = 5.0 V

IC/IB = 10

TJ = 25°C

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02 20 30

NOTE: For information of Figures 3 and 6 , RB and RC were

NOTE: varied to obtain desired test conditions.

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

θJC(t) = r(t) θJC

θJC = 0.7°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

2000

2N6274 2N6275 2N6277

http://onsemi.com

5

100

2.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

50

20

10

5.0

2.0

1.0

0.5

0.02

3.0 5.0 7.0 10 20 30

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

CURVES APPLY BELOW

RATED V(BR)CEO

50

0.2

0.1

IC, COLLECTOR CURRENT (AMP)

2N6274

2N6275

2N6277

TJ = 200°Cdc 5.0 ms 1.0 ms

0.01 10070 200

0.05

100 µs

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

 200C. TJ(pk) may be calculated from the data in

Figure 4. A t high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

3.0

0.5

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

2.0

1.0

0.5

0.3

0.2

0.1

0.05 0.7 1.0 2.0 3.0 7.0 10 20

tf @ VCC = 80 V

IB1 = IB2

IC/IB = 10

TJ = 25°C

0.07

t, TIME (s)µ

ts

5.0

10,000

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

1.0 2.0 5.0 20 50 100100.2 0.5

C, CAPACITANCE (pF)

100

TJ = 25°C

Cib

Cob

0.7

5.0

30 50

200

300

500

700

7000

5000

3000

2000

1000

2N6274 2N6275 2N6277

http://onsemi.com

6

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

300

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

10

100

50

30

20

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(sat) @ IC/IB = 4.0 V

V, VOLTAGE (VOLTS)

+12

Figure 10. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+10

+8.0

+6.0

+ 4.0

-2.0

*θVC for VCE(sat)

*APPLIES FOR IC/IB < hFE@VCE  4.0V

4

4.0

Figure 11. Temperature Coefficients

IB, BASE CURRENT (AMPS)

0

0.8

1.2

0.4

1.6

TJ = 25°C

5.0 A 10 A 30 A

103

Figure 12. Collector Cut–Off Region

VBE, BASEEMITTER VOLTAGE (VOLTS)

102

101

100

10-1

Figure 13. Base Cut–off Region

200

70

hFE, DC CURRENT GAIN

TJ = 150°C

+ 25°C

-55°C

VCE = 4.0 V

VCE = 10 V

, COLLECTOR CURRENT (AMPS)IC

10-2

-0.1 0 +0.1 +0.2 +0.3 +0.4

VCE = 100 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

500

700

1000

0.5 0.7 1.0 2.0 3.0 7.0 10 205.0 30 50 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

2.0

2.4

2.8

3.2

3.6

0

+ 2.0

0.5 0.7 1.0 2.0 3.0 7.0 10 205.0 30 50 0.5 0.7 1.0 2.0 3.0 7.0 10 205.0 30 50

θVB for VBE

-55°C TO + 25°C

+ 25°C TO + 150°C

VCE(sat)

@ IC/IB = 10

IC =I

CES

TJ = 150°C

100°C

25°C

VCE = 100 V

REVERSE FORWARD

10-3

102

101

100

10-1

10-2

-0.1 0 +0.1 +0.2 +0.3 +0.4

VBE, BASEEMITTER VOLTAGE (VOLTS)

0

0.8

1.2

0.4

1.6

2.0

2.4

2.8

, BASE CURRENT ( A)IBµ

IC =

2.0 A

2N6274 2N6275 2N6277

http://onsemi.com

7

PACKAGE DIMENSIONS

CASE 197A–05

TO–204AE

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.530 REF 38.86 REF

B0.990 1.050 25.15 26.67

C0.250 0.335 6.35 8.51

D0.057 0.063 1.45 1.60

E0.060 0.070 1.53 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N0.760 0.830 19.31 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

–T– SEATING

PLANE

2 PL

D

M

Q

M

0.30 (0.012) Y M

T

M

Y

M

0.25 (0.010) T

–Q–

–Y–

2

1

L

GB

V

H

U

2N6274 2N6275 2N6277

http://onsemi.com

8

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

CENTRAL/SOUTH AMERICA:

Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)

Email: ONlit–spanish@hibbertco.com

Toll–Free from Mexico: Dial 01–800–288–2872 for Access –

then Dial 866–297–9322

ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support

Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)

Toll Free from Hong Kong & Singapore:

001–800–4422–3781

Email: ONlit–asia@hibbertco.com

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

2N6274/D

NORTH AMERICA Literature Fulfillment:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada

N. American Technical Support: 800–282–9855 Toll Free USA/Canada

EUROPE: LDC for ON Semiconductor – European Support

German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)

Email: ONlit–german@hibbertco.com

French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)

Email: ONlit–french@hibbertco.com

English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)

Email: ONlit@hibbertco.com

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781

*Available from Germany, France, Italy, UK, Ireland