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©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0
BUZ11
N-Channel Power MOSFET
50V, 30A, 40 mΩ
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9771.
Features
• 30A, 50V
•r
DS(ON) = 0.040Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ11_NR4941 TO-220AB BUZ11
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
September 2013 File Number 2253.2Data Sheet
©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ11 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 50 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V
Continuous Drain Current TC = 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID30 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 120 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD75 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 50 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V
Zero Gate Voltage Drain Current IDSS TJ = 25oC, VDS = 50V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 50V, VGS = 0V - 100 1000 µA
Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 15A, VGS = 10V (Figure 8) - 0.03 0.04 Ω
Forward Transconductance (Note 2) gfs VDS = 25V, ID = 15A (Figure 11) 4 8 - S
Turn-On Delay Time td(ON) VCC = 30V, ID ≈ 3A, VGS = 10V, RGS = 50Ω,
RL = 10Ω
-3045ns
Rise Time tr- 70 110 ns
Turn-Off Delay Time td(OFF) - 180 230 ns
Fall Time tf- 130 170 ns
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 1500 2000 pF
Output Capacitance COSS - 750 1100 pF
Reverse Transfer Capacitance CRSS - 250 400 pF
Thermal Resistance Junction to Case RθJC ≤ 1.67 oC/W
Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD TC = 25oC--30A
Pulsed Source to Drain Current ISDM TC = 25oC - - 120 A
Source to Drain Diode Voltage VSD TJ = 25oC, ISD = 60A, VGS = 0V - 1.7 2.6 V
Reverse Recovery Time trr TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs,
VR = 30V
- 200 - ns
Reverse Recovery Charge QRR - 0.25 - µC
NOTES:
2. Pulse Test: Pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
BUZ11
©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
TA, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
0.2
0.4
0.6
0.8
1.0
1.2
125
40
30
20
10
00 50 100 150
TC, CASE TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
VGS > 10V
10-5 10-4 10-3 10-2 10-1 100101
t, RECTANGULAR PULSE DURATION (s)
ZθJC, TRANSIENT THERMAL IMPEDANCE
1
0.1
0.01
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
t1
t2
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
100µs
10µs
DC
1ms
10ms
100ms
103
102
101
100
100101102
2.5µs
OPERATION IN THIS
AREA MAY BE LIMITED
BY rDS(ON)
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
60
50
40
30
20
10
0
ID, DRAIN CURRENT (A)
0123456
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 8.0V
VGS = 7.5V
VGS = 7.0V
VGS = 6.5V
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
VGS = 4.5V
VGS = 4.0V
10V
VGS = 20V PULSE DURATION = 80µs
PD = 75W DUTY CYCLE = 0.5% MAX
BUZ11
©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0
FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
20
15
10
5
0
IDS(ON), DRAIN TO SOURCE CURRENT (A)
01234 5678
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
VDS = 25V
DUTY CYCLE = 0.5% MAX
0.15
0.10
0.05
00 204060
ID, DRAIN CURRENT (A)
rDS(ON), ON-STATE RESISTANCE (Ω)
5.5V
6V
6.5V
7V
7.5V
8V
9V
20V
10V
PULSE DURATION = 80µs
VGS = 5V
DUTY CYCLE = 0.5% MAX
-50 0 50 100 150
rDS(ON), DRAIN TO SOURCE
0.08
0.06
0.04
0.02
0
TJ, JUNCTION TEMPERATURE (oC)
ID = 15A, VGS = 10V
PULSE DURATION = 80µs
ON RESISTANCE (Ω)
DUTY CYCLE = 0.5% MAX
-50 0 50 100 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
4
3
2
1
0
TJ, JUNCTION TEMPERATURE (oC)
ID = 1mA
VDS = VGS
020 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
10-2
10-1
100
C, CAPACITANCE (nF)
101
CISS
COSS
CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
10
8
6
4
2
0
0 5 10 15 20
ID, DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
TJ = 25oC
PULSE DURATION = 80µs
VDS = 25V
DUTY CYCLE = 0.5% MAX
BUZ11
©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
00.5 1.0 1.5 2.0 2.5 3.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
103
102
101
100
10-1
ISD, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs
TJ = 25oC
TJ = 150oC
DUTY CYCLE = 0.5% MAX
15
10
5
00 1020304050
Qg, GATE CHARGE (nC)
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 45A
VDS = 10V
VDS = 40V
VGS
RL
RG
DUT
+
-
VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
Ig(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
Ig(REF)
0
BUZ11
TRADEMARKS
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PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
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FACT Quiet Series™
FACT®
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Saving our world, 1mW/W/kW at a time™
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Solutions for Your Success™
SPM®
STEALTH™
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SuperSOT™-3
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SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
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TINYOPTO™
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TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
SerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
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Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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Rev. I66
tm
®
BUZ11
©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0
www.onsemi.com
1
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