PAGE . 1November 01,2010-REV.02
2N7002
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
60V N-Channel Enhancement Mode MOSFET
• Marking : S72
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PARAMETER Symbol Limit Units
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
+20 V
Continuous D rain Current I
D
250 mA
Pulsed Drain Current
1)
I
DM
1300 mA
Maximum Power Dissipation T
A
=25
O
C
T
A
=75
O
CP
D
350
210 mW
Operating Junction and Storage Temperature Range T
J
,T
STG
-55 to + 150
O
C
Junction-to Ambient Thermal Resistance(PCB mounted)
2
R
θJA
357
O
C/W
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)MAX.
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.006(0.15)MIN.
0.103(2.60)
0.086(2.20)
0.008(0.20)
0.003(0.08)
• Apporx. Weight : 0.0003 ounces, 0.0084grams
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=5Ω
• RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω
•
•
•
•
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for Battery Operated Systems, Solid-State Relays
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*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG+DORJHQ)UHH
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.