2011-08-19
1
SMBT2222A/MMBT2222A
1
2
3
NPN Silicon Switching Transistor
• Low collector-emitter saturation voltage
• Complementary type:
SMBT2907A / MMBT2907A (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBT2222A/MMBT2222A s1P 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V
Collector-base voltage VCBO 75
Emitter-base voltage VEBO 6
Collector current IC600 mA
Total power dissipation-
TS ≤ 77 °C
Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 220 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-08-19
2
SMBT2222A/MMBT2222A
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 40 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 75 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6 - -
Collector-base cutoff current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.01
10
µA
Emitter-base cutoff current
VEB = 3 V, IC = 0
IEBO - - 10 nA
DC current gain1)
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 1 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
35
50
75
50
100
40
-
-
-
-
-
-
-
-
-
-
300
-
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
-
-
-
0.3
1
V
Base emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
0.6
-
-
-
1.2
2
1Pulse test: t < 300µs; D < 2%
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SMBT2222A/MMBT2222A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz
fT300 - - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 2.5 5 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - - 35
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h11e
2
0.25
-
-
8
1.25
kΩ
Open-circuit reverse voltage transf. ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h12e
-
-
-
-
8
4
10-4
Short-circuit forward current transf. ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h21e
50
75
-
-
300
375
-
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h22e
5
25
-
-
35
200
µS
Delay time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
td- - 10 ns
Rise time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
tr- - 25
Storage time
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA
tstg - - 225
Fall time
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA
tf- - 60
Noise figure
IC = 100 µA, VCE = 10 V, f = 1 kHz,
∆ f = 200 Hz, RS = 1 kΩ
F- - 4 dB
2011-08-19
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SMBT2222A/MMBT2222A
Test circuit
Delay and rise time
EHN00055
200 Osc.
619
30
9.9
00.5
Ω
Ω
V
V
V
Storage and fall time
EHN00056
200 Osc.
1
30
16.2
0
-13.8
-3.0
µ500~s
s~100
µ
< 5 ns
Ω
Ω
V
V
V
Vk
Oscillograph: R > 100Ω, C < 12pF, tr < 5ns
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SMBT2222A/MMBT2222A
DC current gain hFE = ƒ(IC)
VCE = 10 V
EHP00743SMBT 2222/A
10
10 mA
h
C
10
5
FE
10
3
2
10
1
5
10 10 10
-1 0 1 2 3
Ι
-50 ˚C
25 ˚C
150 ˚C
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
EHP00742SMBT 2222/A
10
0V
BE sat
mA
10
3
1
10-1
5
100
5
V
0.2 0.4 0.6 0.8 1.0 1.2
CE sat
V,
5
102VBE
VCE
Ι
C
Transition frequency fT = ƒ(IC)
VCE = 20 V
EHP00741SMBT 2222/A
10
10 10 mA
f
C
10
MHz
10
T
555
Ι
0123
10
3
2
10
1
5
2
2
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 5 10 15 V25
VCB(VEB
0
5
10
15
20
25
pF
35
CCB(CEB)
CCB
CEB
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SMBT2222A/MMBT2222A
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00740SMBT 2222/A
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
PDC
P
p
t
Delay time td = ƒ(IC)
Rise time tr = ƒ(IC)
EHP00744SMBT 2222/A
10
ns
10 10 mA
t
C
10
5
10
d
555
Ι
0123
10
3
2
10
1
5
r
t,
h
FE
t
d
t
d
t
r
t
r
V
CC
= 30 V
= 10
V
BE
= 5 V
= 2 V
= 0 V
V
BE
V
BE
Storage time tstg = ƒ(IC)
Fall time tf = ƒ(IC)
EHP00745SMBT 2222/A
10
10 mA
C
5
10
3
2
10
1
5
10 10
12 3
Ι
5 5
ns
FE
h
h
FE
s
t
f
t
= 10
= 20
s
t t,
f
h
FE
= 10
2011-08-19
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SMBT2222A/MMBT2222A
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-08-19
8
SMBT2222A/MMBT2222A
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
