www.element14.com
www.farnell.com
www.newark.com
Page <1> V1.025/02/13
Schottky Barrier Diode
Features:
• Extremely Fast Switching Speed
• Low Forward Voltage
• Power Dissipation Pd = 200mW
• Pb-Free Package is Available
Applications:
Fast switching speed diode
Max. Rating @ Ta = 25°C unless otherwise specied
Parameter Symbol Limits Unit
Peak repetitive peak reverse voltage
Working peak
DC reverse voltage
Vrrm
Vrms
Vr
30 V
Forward continuous current If200 mA
Repetitive peak forward current Ifrm 200 mA
Forward surge current @t<1.0s Ifsm 600 mA
Power dissipation Pd200 mW
Thermal resistance, junction to ambient air Rθja 500 °C/W
Operating and storage temperature Tj, Tstg -55 to +150 °C
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Conditions Min. Max. Unit
Reverse breakdown voltage V(br)Ir = 100μA 30 - V
Forward voltage
Vf1If = 0.1mA - 0.24 V
Vf2If = 1mA - 0.32 V
Vf3If = 10mA - 0.4 V
Vf4If = 30mA - 0.5 V
Vf5If = 100mA - 1 V
Reverse current IrVr = 25V - 2 μA
Diode capacitance CdVr = 1V, f = 1MHz - 10 pF
Reverse recovery time trr If = Ir = 10mA
Irr = 0.1 × Ir, Rl = 100Ω - 5 ns