IRFR224BTM_FP001 - Fairchild Semiconductor

November 2001

Rev. B, November 2001

IRFR224B / IRFU224B

250V N-Ch annel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters and

switch mode power supplies.

Features

• 3.8A, 250V, RDS(on) = 1.1Ω @VGS = 10 V

• Low gate charge ( typical 13.5 nC)

• Low Crss ( typical 9.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maxim um Ratings TC = 25°C unless otherwise noted

Thermal Char acteristics

Symbol Parameter IRFR224B / IRFU224B Units

VDSS Drain-Source Voltage 250 V

IDDrain Current - Continuous (TC = 25°C) 3.8 A

- Continuous (TC = 100°C) 2.4 A

IDM Drain Current - Pulsed (Note 1) 15.2 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 75 mJ

IAR Avalanche Current (Note 1) 3.8 A

EAR Repetitive Avalanche Energy (Note 1) 4.2 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns

PDPower Dissipation (TA = 25°C) * 2.5 W

Power Dissipation (TC = 25°C) 42 W

- Derate above 25°C 0.34 W/°C

TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 2.96 °C/W

RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

I-PAK

IRFU Series

D-P AK

IRFR Series GSD

Rev. B, November 2001

IRFR224B / IRFU224B

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 8.3mH, IAS = 3.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 4.1A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Vo ltage VGS = 0 V, ID = 250 µA250 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.26 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 µA

VDS = 200 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) G ate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 1.9 A -- 0.84 1.1 Ω

gFS Forward Transconductance VDS = 40 V, ID = 1.9 A -- 3.6 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 350 450 pF

Coss Output Capacitance -- 45 59 pF

Crss Reverse Transfer Capacitance -- 9.5 13 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 125 V, ID = 4.1 A,

RG = 25 Ω

-- 6.5 25 ns

trTurn-On Rise Time -- 35 80 ns

td(off) Turn-Off De l a y Time -- 40 90 ns

tfTurn-Off F a ll Time -- 3 5 80 ns

QgTotal Gate Charge VDS = 200 V, ID = 4.1 A,

VGS = 10 V

-- 13.5 18 nC

Qgs Gate-Source Charge -- 2.0 -- nC

Qgd Gate-Drain Charge -- 6.5 -- nC

Drain-Source Diode Charac teristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 3.8 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 15.2 A

VSD Drain-Source Diode Forward V oltage VGS = 0 V, IS = 3.8 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, IS = 4.1 A,

dIF / dt = 100 A/µs

-- 145 -- ns

Qrr Reverse Recovery Charge -- 0.7 -- µC

IRFR224B / IRFU224B

0 3 6 9 12 15

VDS = 125V

VDS = 50V

VDS = 200V

$ Note : ID = 4.1 A

VGS, Gate-Source Voltage [V]

QG, T o ta l G a te Cha rg e [n C ]

036912

VGS = 20V

VGS = 10V

$ Note : TJ = 25%

RDS(ON) [&],

Drain-Source On-Resistance

ID, Drain Current [A]

246810

10-1

100

101

150oC

25oC

-55oC$ N o te s :

1. VDS = 40V

2. 250's P ulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

10-1 100101

10-1

100

101 V GS

Top : 1 5 .0 V

1 0 .0 V

8 .0 V

7 .0 V

6 .5 V

6 .0 V

5 .5 V

Bottom : 5.0 V

$ N otes :

1. 250 's Pulse Test

2. TC = 25%

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

10-1 100101

200

400

600

800

1000

Coss

Ciss = Cgs + Cgd (C ds = shorted)

Coss = Cds + Cgd

Crss = Cgd

$ N otes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

10-1

100

101

150%

$ Note s :

1. VGS = 0V

2. 250's P ulse Test

25%

IDR, Reverse D rain Current [A]

VSD, Source-Drain voltage [V]

Typical Characteristics

Figure 5. Capacitanc e C haracteri st i cs Figure 6. Gate Char ge Character is tics

Figure 3. On-Resistanc e Variation vs

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Va riation with Source Cur r ent

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Charact er ist ic s

IRFR224B / IRFU224B

10-5 10-4 10-3 10-2 10-1 100101

10-1

100$ Notes :

1 . Z(JC(t) = 2 .96 %/W Ma x .

2 . Du ty F a c tor, D = t1/t2

3 . TJM - T C = PDM * Z(JC(t)

s in g le p u ls e

D=0.5

0.02

0.2

0.05

0.1

0.01

Z(JC

(t), T he r ma l Re s po ns e

t1, Square Wave Pulse Duration [sec]

25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

ID, D ra in C u rre n t [A]

TC, Case Temperature [%

]

100101102

10-2

10-1

100

101

102

100 µs

1 ms

DC 10 ms

Operation in This Area

is Limited by R DS(on)

$ N otes :

1. TC = 25 oC

2. TJ = 15 0 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

N o te s :

1 . V GS = 10 V

2 . ID = 2.05 A

RDS(ON) , (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

N o te s :

1 . V GS = 0 V

2 . ID = 250 'A

BV DSS , (No rma liz e d )

Drain-Source Breakdown Voltage

TJ, Junction Tem perature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperature

Figu re 7. Breakdown Vol tage Variation

vs Temperature Figure 8. On-Resistance Variation

vs Temperature

Figure 11. Transient Ther m al Res pons e Cur ve

PDM

IRFR224B / IRFU224B

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K)

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K)

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

IRFR224B / IRFU224B

Peak Diode Recover y dv/dt Test Ci rc ui t & Waveform s

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con trol l ed by pulse peri od

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con trol l ed by pulse peri od

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

IRFR224B / IRFU224B

Package Dimensions

6.60 ±0.20

2.30 ±0.10

0.50 ±0.10

5.34 ±0.30

0.70 ±0.20

0.60 ±0.20

0.80 ±0.20

9.50 ±0.30

6.10 ±0.20

2.70 ±0.20 9.50 ±0.30

6.10 ±0.20

2.70 ±0.20

MIN0.55

0.76 ±0.10 0.50 ±0.10

1.02 ±0.20

2.30 ±0.20

6.60 ±0.20

0.76 ±0.10

(5.34)

(1.50)

(2XR0.25)

(5.04)

0.89 ±0.10

(0.10) (3.05)

(1.00)

(0.90)

(0.70)

0.91 ±0.10

2.30TYP

[2.30±0.20]

2.30TYP

[2.30±0.20]

MAX0.96

(4.34)(0.50) (0.50)

D-PAK

Dimensions in Millimeters

IRFR224B / IRFU224B

Package Dimensions (Continued)

6.60 ±0.20

0.76 ±0.10

MAX0.96

2.30TYP

[2.30±0.20] 2.30TYP

[2.30±0.20]

0.60 ±0.20

0.80 ±0.10

1.80 ±0.20

9.30 ±0.30

16.10 ±0.30

6.10 ±0.20

0.70 ±0.20

5.34 ±0.20

0.50 ±0.10

2.30 ±0.20

(0.50) (0.50)(4.34)

I-PAK

Dimensions in Millimeters

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

STAR*POWE R is used under license

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

FACT Quiet Series™

FAST®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerTrench®

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER®

SMART START™

STAR*POWER™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TruTranslation™

TinyLogic™

UHC™

UltraFET®

VCX™