RQJ0301HGDQS Silicon P Channel MOS FET Power Switching REJ03G1265-0300 Rev.3.00 Jun 05, 2006 Features * Low on-resistance RDS(on) = 38 m typ (VGS = -10 V, ID = -2.6 A) * Low drive current * High speed switching * 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 2, 4 D 2 1 3 1. Gate 2. Drain 3. Source 4. Drain 1G 4 S 3 Note: Marking is "HG". *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS VGSS ID Drain peak current ID (pulse)Note1 Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel dissipation Pch (pulse)Note1 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 1 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Rev.3.00 Jun 05, 2006 page 1 of 6 Ratings -30 +10 / -20 -5.2 Unit V V A -7.6 -5.2 1.5 5 150 -55 to +150 A A W W C C RQJ0301HGDQS Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) Min -30 +10 -20 -- -- -- -1.0 Typ -- -- -- -- -- -- -- Max -- -- -- +10 -10 -1 -2.0 Unit V V V A A A V Test conditions ID = -10 mA, VGS = 0 IG = +100 A, VDS = 0 IG = -100 A, VDS = 0 VGS = +8 V, VDS = 0 VGS = -16 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, ID = -1 mA Drain to source on state resistance RDS(on) -- 38 48 m ID = -2.6 A, VGS = -10 VNote3 RDS(on) -- 56 79 m ID = -2.6 A, VGS = -4.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time |yfs| Ciss Coss Crss td(on) tr td(off) 4.1 -- -- -- -- -- -- 6.8 845 153 118 22 41 50 -- -- -- -- -- -- -- S pF pF pF ns ns ns ID = -2.6 A, VDS = -10 VNote3 Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test tf Qg Qgs Qgd VDF -- -- -- -- -- 6.8 18 1.6 6.0 -0.8 -- -- -- -- -- ns nC nC nC V Rev.3.00 Jun 05, 2006 page 2 of 6 VDS = -10 V, VGS = 0, f = 1 MHz ID = -1 A, VGS = -10 V, RL = 10 , Rg = 4.7 VDD = -10 V, VGS = -10 V, ID = -5.2 A IF = -1.5 A, VGS = 0Note3 RQJ0301HGDQS Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area -100 Drain Current ID (A) Channel Dissipation Pch (W) 2.0 1.5 1.0 0.5 Operation in this area is limited by RDS(on) 100 s -10 PW DC -1 1 = O pe m s 10 m s ra tio n -0.1 Ta = 25C 1 Shot Pulse 0 0 25 50 75 100 125 -0.01 -0.01 150 -0.1 -1 -10 -100 Drain to Source Voltage VDS (V) Ambient Temperature Ta (C) *When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Typical Transfer Characteristics (1) Typical Output Characteristics -10 V -2.9 V -3.0 V -3.5 V -5 -6 -2.7 V -2.8 V -2.6 V -4 -2.5 V -3 -2.4 V -2.3 V -2 -2.2 V -4 -3 -2 25C -1 -1 0 VDS = -10 V Pulse Test -5 Drain Current ID (A) Drain Current ID (A) -6 Pulse Test Tc = 25C 0 -2 -4 -6 -8 -25C Tc = 75C VGS = 0 V 0 -10 0 Drain to Source Voltage VDS (V) -1 -2 -3 -4 -5 Gate to Source Voltage VGS (V) -0.1 Drain Current ID (A) VDS = -10 V Pulse Test Tc = 75C -0.01 25C -0.001 -0.0001 0 -25C -0.5 -1 -1.5 -2 -2.5 -3 Gate to Source Voltage VGS (V) Rev.3.00 Jun 05, 2006 page 3 of 6 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature -2 ID = -10 mA -1.5 -1 mA -1 -0.1 mA -0.5 -25 VDS = -10 V Pulse Test 0 25 50 75 100 125 150 Case Temperature Tc (C) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test Tc = 25C -0.25 -0.2 -1.5 A -0.15 -2.6 A -0.1 -1 A -2 A -0.05 0 0 -0.5 A -4 -8 -12 -16 100 Drain to Source on State Resistance RDS(on) () -0.3 Static Drain to Source on State Resistance vs. Drain Current Pulse Test Tc = 25C VDS = -4.5 V -10 V 30 10 -0.1 -20 -1 -10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature 90 80 ID = -2.6 A Pulse Test VGS = -4.5 V -1.5 A 70 60 50 -0.5 A 40 30 20 10 -25 0 25 50 75 100 125 150 Drain to Source on State Resistance RDS(on) (m) Gate to Source Voltage VGS (V) 70 60 Pulse Test VGS = -10 V ID = -2.6 A -1.5 A 50 40 -0.5 A 30 20 10 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Case Temperature Tc (C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 100 Pulse Test VDS = -10 V 10 -25C Tc = 75C 1 25C 0.1 -0.1 -1.0 Drain Current ID (A) Rev.3.00 Jun 05, 2006 page 4 of 6 -10.0 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (m) Drain to Source Saturation Voltage VDS(on) (V) RQJ0301HGDQS -1000 Pulse Test VGS = 0 V VDS = -30 V -100 -10 -1 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) RQJ0301HGDQS Switching Characteristics VDS VDD = -25 V -20 VDD = -10 V -40 -4 -10 V -8 -25 V -60 -12 VGS -80 -16 ID = -5.2 A Tc = 25C -100 1000 tr Switching Time t (ns) 0 0 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 4 8 12 16 tf -0.1 -1 -10 Gate Charge Qg (nC) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 1500 VDS = 0 V f = 1 MHz VGS = 0 V f = 1 MHz 1400 Coss Ciss (pF) Ciss 1000 1300 1200 100 Crss 10 -0 -10 -20 1000 -10 -30 -5 0 5 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature -6 Pulse Test Tc = 25C -5 -10V -4 -5V -3 -2 VGS = 0 V,5 V -1 0 0 1100 -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage VSD (V) Rev.3.00 Jun 05, 2006 page 5 of 6 Body-Drain Diode Forward Voltage VSDF (V) Ciss, Coss, Crss (pF) VDD = -10 V VGS = -10 V Rg = 4.7 PW = 5 s Tc = 25C 10 -0.01 20 10000 Reverse Drain Current IDR (A) td(on) 1 -20 0 td(off) 100 -0.8 VGS = 0 -0.7 -0.6 ID = -10 mA -0.5 -0.4 -1 mA -0.3 -0.2 -0.1 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) RQJ0301HGDQS Package Dimensions 1.5 1.5 3.0 MASS[Typ.] 0.050g 1.5 0.1 0.44 Max 2.5 0.1 4.25 Max 0.53 Max 0.48 Max 0.8 Min 1 0.4 4.5 0.1 1.8 Max Previous Code UPAK / UPAKV Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Part Name RQJ0301HGDQSTL-E Quantity 1000 pcs. Rev.3.00 Jun 05, 2006 page 6 of 6 Shipping Container 178 reel, 12 mm Emboss taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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